Toshiba π-MOS VIII MOSFETs
Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.
Features
- 10V gate drive
- 0.0031Ω to 2.1Ω (@VGS = 10V) maximum drain-source on-resistance (RDS(ON))
- 800V to 900V drain-source voltage (VDSS)
- ±30V gate-source voltage (VGSS)
- 2A to 10A drain current (ID)
- 45W to 250W power dissipation (PD)
- 500pF to 200pF input capacitance (CISS)
Applications
- Switching voltage regulators
- Flyback converters
- Supplementary power supplies
- Power factor control (PFC)
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- Derating of the MOSFET Safe Operating Area
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
Paskelbta: 2019-10-02
| Atnaujinta: 2023-12-08