|
|
Igbt Moduliai LOW POWER ECONO
- F4150R12N3H3FB11BPSA1
- Infineon Technologies
-
1:
93,57 €
-
15Prieinamumas
|
„Mouser“ Dalies Nr.
726-F4150R12N3H3FB11
|
Infineon Technologies
|
Igbt Moduliai LOW POWER ECONO
|
|
15Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB54BPSA2
- Infineon Technologies
-
1:
31,52 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB54BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
Dual
|
650 V
|
1.35 V
|
40 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 600 V, 50 A PIM three phase input rectifier IGBT module
- FP50R06KE3BPSA1
- Infineon Technologies
-
1:
60,25 €
-
15Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP50R06KE3BPSA1
|
Infineon Technologies
|
Igbt Moduliai 600 V, 50 A PIM three phase input rectifier IGBT module
|
|
15Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
600 V
|
1.45 V
|
60 A
|
100 nA
|
190 W
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC
- FF1400R23T2E7B5BPSA1
- Infineon Technologies
-
1:
1 446,52 €
-
5Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF1400R23T2E7B5B
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC
|
|
5Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Module
|
Dual
|
2.3 kV
|
1.85 V
|
|
400 nA
|
2.4 MW
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC / pre-applied thermalinterface material
- FF1400R23T2E7PB5BPSA1
- Infineon Technologies
-
1:
1 475,16 €
-
5Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF1400R23T2E7PB5
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC / pre-applied thermalinterface material
|
|
5Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Module
|
Dual
|
2.3 kV
|
1.85 V
|
|
400 nA
|
2.4 MW
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai F5+BP-PIM 250KW ESS 1500VDC INPC INVERTER WITH HPS DBC- AGILE#N07L0
- NXH600N105L7F5S1HG
- onsemi
-
1:
167,78 €
-
224Prieinamumas
-
96Tikėtina 2026-03-02
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-H600N105L7F5S1HG
Naujas Produktas
|
onsemi
|
Igbt Moduliai F5+BP-PIM 250KW ESS 1500VDC INPC INVERTER WITH HPS DBC- AGILE#N07L0
|
|
224Prieinamumas
96Tikėtina 2026-03-02
|
|
Min.: 1
Daugkart.: 1
|
|
|
Inverter Modules
|
|
1.05 kV
|
2.3 V
|
|
1 uA
|
1.08 kW
|
PIM-57
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 3300 V, 825 A single switch IGBT module
Infineon Technologies FZ825R33HE4DBPSA1
- FZ825R33HE4DBPSA1
- Infineon Technologies
-
1:
1 015,73 €
-
2Prieinamumas
|
„Mouser“ Dalies Nr.
726-FZ825R33HE4DBPSA
|
Infineon Technologies
|
Igbt Moduliai 3300 V, 825 A single switch IGBT module
|
|
2Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Single
|
3.3 kV
|
2.4 V
|
825 A
|
400 nA
|
2.4 MW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT 1700V 1600A
Infineon Technologies FZ1600R17HP4
- FZ1600R17HP4
- Infineon Technologies
-
1:
602,77 €
-
3Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ1600R17HP4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1700V 1600A
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
1.7 kV
|
1.9 V
|
1.6 kA
|
400 nA
|
10.5 kW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT 1700V 3600A
Infineon Technologies FZ3600R17HE4
- FZ3600R17HE4
- Infineon Technologies
-
1:
1 182,99 €
-
3Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ3600R17HE4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1700V 3600A
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
1.7 kV
|
1.95 V
|
3.6 kA
|
400 nA
|
20 kW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1700 V, 450 A sixpack IGBT module
Infineon Technologies FS450R17OP4BPSA1
- FS450R17OP4BPSA1
- Infineon Technologies
-
1:
479,02 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS450R17OP4BPSA1
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 450 A sixpack IGBT module
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.7 kV
|
1.7 V
|
450 A
|
400 nA
|
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES STANDARD TYPE DUAL
- CM100DY-13T
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM100DY-13T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES STANDARD TYPE DUAL
|
|
|
|
|
|
|
IGBT Modules
|
Dual
|
650 V
|
1.35 V
|
100 A
|
500 nA
|
775 W
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai IGBT MODULE S-SERIES NX TYPE CHOPPER
- CM200EXS-24S
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM200EXS-24S
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE S-SERIES NX TYPE CHOPPER
|
|
|
|
|
|
|
IGBT Modules
|
Single
|
1.2 kV
|
1.8 V
|
200 A
|
500 nA
|
1.5 kW
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai Large DIPIPM Version 6 6-PAC
- PSS25SA2FT
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-PSS25SA2FT
|
Mitsubishi Electric
|
Igbt Moduliai Large DIPIPM Version 6 6-PAC
|
|
|
|
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.5 V
|
25 A
|
|
103 W
|
|
- 30 C
|
+ 100 C
|
|
|
|
|
|
Igbt Moduliai 1700 V, 500 A sixpack IGBT module
Infineon Technologies FS500R17OE4D
- FS500R17OE4D
- Infineon Technologies
-
1:
574,82 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS500R17OE4D
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 500 A sixpack IGBT module
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.7 kV
|
1.95 V
|
740 A
|
400 nA
|
3 kW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IHV IHM T
Infineon Technologies FZ800R45KL3_B5
- FZ800R45KL3_B5
- Infineon Technologies
-
1:
1 467,17 €
-
1Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ800R45KL3_B5
|
Infineon Technologies
|
Igbt Moduliai IHV IHM T
|
|
1Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Single
|
4.5 kV
|
2.5 V
|
800 A
|
400 nA
|
1.6 MW
|
|
- 50 C
|
+ 125 C
|
|
Tray
|
|
|
|
Igbt Moduliai 50 Amps 1700V
- MUBW50-17T8
- IXYS
-
1:
162,63 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
747-MUBW50-17T8
|
IXYS
|
Igbt Moduliai 50 Amps 1700V
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
1.7 kV
|
2 V
|
74 A
|
400 nA
|
290 W
|
E3
|
- 40 C
|
+ 125 C
|
|
Bulk
|
|
|
|
Igbt Moduliai Mini DIPIPM Version 6 6-PAC
- PSS05S72FT
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-PSS05S72FT
|
Mitsubishi Electric
|
Igbt Moduliai Mini DIPIPM Version 6 6-PAC
|
|
|
|
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.4 V
|
5 A
|
|
|
|
- 30 C
|
+ 100 C
|
|
|
|
|
|
Igbt Moduliai N-CH 600V 37A
Infineon Technologies FP30R06W1E3
- FP30R06W1E3
- Infineon Technologies
-
1:
29,95 €
-
248Prieinamumas
|
„Mouser“ Dalies Nr.
641-FP30R06W1E3
|
Infineon Technologies
|
Igbt Moduliai N-CH 600V 37A
|
|
248Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
600 V
|
1.55 V
|
37 A
|
400 nA
|
115 W
|
EASY1B
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 300 A sixpack IGBT module
Infineon Technologies FS300R12OE4
- FS300R12OE4
- Infineon Technologies
-
1:
270,50 €
-
20Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS300R12OE4
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 300 A sixpack IGBT module
|
|
20Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.75 V
|
460 A
|
400 nA
|
1.65 kW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT 1200V 1600A
Infineon Technologies FZ1600R12HP4
- FZ1600R12HP4
- Infineon Technologies
-
1:
585,90 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ1600R12HP4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1200V 1600A
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT Module 600A 6500V
Infineon Technologies FZ600R65KE3
- FZ600R65KE3
- Infineon Technologies
-
1:
2 012,96 €
-
1Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ600R65KE3
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 600A 6500V
|
|
1Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 600 A dual IGBT module
Infineon Technologies FF600R07ME4B11BPSA1
- FF600R07ME4B11BPSA1
- Infineon Technologies
-
1:
111,22 €
-
16Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF600R07ME4B11B1
|
Infineon Technologies
|
Igbt Moduliai 650 V, 600 A dual IGBT module
|
|
16Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
650 V
|
1.55 V
|
700 A
|
100 nA
|
1.8 kW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 1400 A dual IGBT module
Infineon Technologies FF1400R12IP4P
- FF1400R12IP4P
- Infineon Technologies
-
1:
580,71 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
641-FF1400R12IP4P
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 1400 A dual IGBT module
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.75 V
|
1.4 kA
|
400 nA
|
1.4 MW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES 6-PAC NX TYPE
- CM100TX-13T
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM100TX-13T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES 6-PAC NX TYPE
|
|
|
|
|
|
|
IGBT Modules
|
6-Pack
|
650 V
|
1.4 V
|
100 A
|
500 nA
|
375 W
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai N-CH 1.2KV 370A
Infineon Technologies FF300R12MS4
- FF300R12MS4
- Infineon Technologies
-
1:
157,58 €
-
10Prieinamumas
|
„Mouser“ Dalies Nr.
641-FF300R12MS4
|
Infineon Technologies
|
Igbt Moduliai N-CH 1.2KV 370A
|
|
10Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
3.2 V
|
370 A
|
400 nA
|
1.95 kW
|
Econo D
|
- 40 C
|
+ 125 C
|
|
Tray
|
|
Lietuva
