|
|
Igbt Moduliai Six-Pack SPT IGBT
- MIEB101W1200EH
- IXYS
-
1:
177,37 €
-
7Prieinamumas
|
„Mouser“ Dalies Nr.
747-MIEB101W1200EH
|
IXYS
|
Igbt Moduliai Six-Pack SPT IGBT
|
|
7Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
6-Pack
|
1.2 kV
|
1.8 V
|
183 A
|
200 nA
|
630 W
|
E3-Pack
|
- 40 C
|
+ 125 C
|
|
Bulk
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES STANDARD TYPE DUAL
- CM200DY-24T
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM200DY-24T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES STANDARD TYPE DUAL
|
|
|
|
|
|
|
IGBT Modules
|
Dual
|
1.2 kV
|
1.65 V
|
200 A
|
500 nA
|
2.38 kW
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai 1200 V, 25 A PIM IGBT module
- FP25R12W2T4PB11BPSA1
- Infineon Technologies
-
1:
49,85 €
-
7Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP25R12W2T4PB11B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A PIM IGBT module
|
|
7Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
25 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai Super Mini DIPIPM 6-PAC
- PSS30S92F6-AG
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-PSS30S92F6-AG
|
Mitsubishi Electric
|
Igbt Moduliai Super Mini DIPIPM 6-PAC
|
|
|
|
|
|
|
IGBT Silicon Modules
|
6-Pack
|
600 V
|
1.65 V
|
30 A
|
|
47.6 W
|
|
- 30 C
|
+ 100 C
|
|
|
|
|
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
Infineon Technologies FS100R12N2T7B15BPSA1
- FS100R12N2T7B15BPSA1
- Infineon Technologies
-
1:
66,04 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS100R12N2T7B15B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.5 V
|
100 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT Module 400A 1700V
Infineon Technologies FZ400R17KE4
- FZ400R17KE4
- Infineon Technologies
-
1:
94,01 €
-
48Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ400R17KE4
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 400A 1700V
|
|
48Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
1.7 kV
|
1.95 V
|
550 A
|
100 nA
|
2.5 kW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai N-CH 1.2KV 650A
Infineon Technologies FZ400R12KE3B1
- FZ400R12KE3B1
- Infineon Technologies
-
1:
100,06 €
-
44Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ400R12KE3B1
|
Infineon Technologies
|
Igbt Moduliai N-CH 1.2KV 650A
|
|
44Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Single
|
1.2 kV
|
1.7 V
|
650 A
|
400 nA
|
2.25 kW
|
62 mm
|
- 40 C
|
+ 125 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 450 A common emitter IGBT module
Infineon Technologies FF450R12KE4_E
- FF450R12KE4_E
- Infineon Technologies
-
1:
118,83 €
-
16Prieinamumas
|
„Mouser“ Dalies Nr.
641-FF450R12KE4_E
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 450 A common emitter IGBT module
|
|
16Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
2.15 V
|
520 A
|
400 nA
|
2.4 kW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT Module 30A 600V
Infineon Technologies FP30R06W1E3_B11
- FP30R06W1E3_B11
- Infineon Technologies
-
1:
29,95 €
-
61Prieinamumas
|
„Mouser“ Dalies Nr.
641-FP30R06W1E3_B11
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 30A 600V
|
|
61Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
600 V
|
1.55 V
|
37 A
|
400 nA
|
115 W
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 600 A dual IGBT module
Infineon Technologies FF600R12KE4BOSA1
- FF600R12KE4BOSA1
- Infineon Technologies
-
1:
147,84 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF600R12KE4BOSA1
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 600 A dual IGBT module
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC
- FF1400R23T2E7B5BPSA1
- Infineon Technologies
-
1:
1 446,52 €
-
5Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF1400R23T2E7B5B
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC
|
|
5Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Module
|
Dual
|
2.3 kV
|
1.85 V
|
|
400 nA
|
2.4 MW
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC / pre-applied thermalinterface material
- FF1400R23T2E7PB5BPSA1
- Infineon Technologies
-
1:
1 475,16 €
-
5Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF1400R23T2E7PB5
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC / pre-applied thermalinterface material
|
|
5Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Module
|
Dual
|
2.3 kV
|
1.85 V
|
|
400 nA
|
2.4 MW
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai F5+BP-PIM 250KW ESS 1500VDC INPC INVERTER WITH HPS DBC- AGILE#N07L0
- NXH600N105L7F5S1HG
- onsemi
-
1:
167,78 €
-
224Prieinamumas
-
96Tikėtina 2026-03-02
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-H600N105L7F5S1HG
Naujas Produktas
|
onsemi
|
Igbt Moduliai F5+BP-PIM 250KW ESS 1500VDC INPC INVERTER WITH HPS DBC- AGILE#N07L0
|
|
224Prieinamumas
96Tikėtina 2026-03-02
|
|
Min.: 1
Daugkart.: 1
|
|
|
Inverter Modules
|
|
1.05 kV
|
2.3 V
|
|
1 uA
|
1.08 kW
|
PIM-57
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai N-CH 600V 100A
- FP100R06KE3
- Infineon Technologies
-
1:
82,87 €
-
12Prieinamumas
|
„Mouser“ Dalies Nr.
641-FP100R06KE3
|
Infineon Technologies
|
Igbt Moduliai N-CH 600V 100A
|
|
12Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
600 V
|
1.45 V
|
100 A
|
100 nA
|
335 W
|
Econo 3
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 600 V, 30 A PIM IGBT module
- FP30R06KE3BPSA1
- Infineon Technologies
-
1:
55,47 €
-
21Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP30R06KE3BPSA1
|
Infineon Technologies
|
Igbt Moduliai 600 V, 30 A PIM IGBT module
|
|
21Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
600 V
|
1.55 V
|
37 A
|
400 nA
|
125 W
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A sixpack IGBT module
- FS25R12W1T7PB11BPSA1
- Infineon Technologies
-
1:
30,93 €
-
87Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS25R12W1T7PB111
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A sixpack IGBT module
|
|
87Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.6 V
|
25 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT 1200V 50A
- FS50R12W2T4
- Infineon Technologies
-
1:
38,26 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS50R12W2T4
|
Infineon Technologies
|
Igbt Moduliai IGBT 1200V 50A
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
6-Pack
|
1.2 kV
|
1.85 V
|
83 A
|
100 nA
|
335 W
|
Module
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 600 A common emitter IGBT module
- FF600R12KE4EBOSA1
- Infineon Technologies
-
1:
145,30 €
-
18Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF600R12KE4EBOSA
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 600 A common emitter IGBT module
|
|
18Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.75 V
|
600 A
|
400 nA
|
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
- FP50R12W2T7BPSA1
- Infineon Technologies
-
1:
44,31 €
-
26Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP50R12W2T7BPSA1
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
|
|
26Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.5 V
|
50 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1700 V, 200 A fourpack input rectifier IGBT modules
- F4200R17N3E4B58BPSA1
- Infineon Technologies
-
1:
118,55 €
-
14Prieinamumas
|
„Mouser“ Dalies Nr.
726-F4200R17N3E4B58B
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 200 A fourpack input rectifier IGBT modules
|
|
14Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
4-Pack
|
1.7 kV
|
1.95 V
|
200 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai LOW POWER ECONO
- F4150R12N3H3FB11BPSA1
- Infineon Technologies
-
1:
93,57 €
-
15Prieinamumas
|
„Mouser“ Dalies Nr.
726-F4150R12N3H3FB11
|
Infineon Technologies
|
Igbt Moduliai LOW POWER ECONO
|
|
15Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai 650 V, 100 A booster IGBT module
- DF100R07W1H5FPB54BPSA2
- Infineon Technologies
-
1:
31,52 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-DFW1H5FPB54BPSA2
|
Infineon Technologies
|
Igbt Moduliai 650 V, 100 A booster IGBT module
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
SiC IGBT Modules
|
Dual
|
650 V
|
1.35 V
|
40 A
|
100 nA
|
|
Module
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 600 V, 50 A PIM three phase input rectifier IGBT module
- FP50R06KE3BPSA1
- Infineon Technologies
-
1:
60,25 €
-
15Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP50R06KE3BPSA1
|
Infineon Technologies
|
Igbt Moduliai 600 V, 50 A PIM three phase input rectifier IGBT module
|
|
15Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
600 V
|
1.45 V
|
60 A
|
100 nA
|
190 W
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES STANDARD TYPE DUAL
- CM100DY-13T
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM100DY-13T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES STANDARD TYPE DUAL
|
|
|
|
|
|
|
IGBT Modules
|
Dual
|
650 V
|
1.35 V
|
100 A
|
500 nA
|
775 W
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai IGBT MODULE S-SERIES NX TYPE CHOPPER
- CM200EXS-24S
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM200EXS-24S
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE S-SERIES NX TYPE CHOPPER
|
|
|
|
|
|
|
IGBT Modules
|
Single
|
1.2 kV
|
1.8 V
|
200 A
|
500 nA
|
1.5 kW
|
|
- 40 C
|
+ 150 C
|
|
|
|