|
|
Igbt Moduliai PIM GENERATION3 Q0PACK 1200V 80A TNPC (SOLDER PIN TIM)
- NXH80T120L3Q0S3TG
- onsemi
-
1:
62,17 €
-
23Prieinamumas
|
„Mouser“ Dalies Nr.
863-NXH80T120L3Q0S3T
|
onsemi
|
Igbt Moduliai PIM GENERATION3 Q0PACK 1200V 80A TNPC (SOLDER PIN TIM)
|
|
23Prieinamumas
|
|
|
62,17 €
|
|
|
49,39 €
|
|
|
46,68 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
|
1.2 kV
|
|
75 A
|
300 nA
|
82 W
|
Q0PACK
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai PIM Q0 T-TYPE NPC 80A 1200V SOLDER PINS TIM
- NXH80T120L2Q0S2TG
- onsemi
-
1:
58,39 €
-
23Prieinamumas
|
„Mouser“ Dalies Nr.
863-NXH80T120L2Q0S2T
|
onsemi
|
Igbt Moduliai PIM Q0 T-TYPE NPC 80A 1200V SOLDER PINS TIM
|
|
23Prieinamumas
|
|
|
58,39 €
|
|
|
46,26 €
|
|
|
43,84 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Q0PACK Modules
|
Module
|
1.2 kV
|
2.05 V
|
67 A
|
300 nA
|
158 W
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IPM MODULE V1-SERIES
- PM200DV1A120
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-PM200DV1A120
|
Mitsubishi Electric
|
Igbt Moduliai IPM MODULE V1-SERIES
|
|
|
|
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.65 V
|
200 A
|
|
1.388 kW
|
|
- 20 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai Super Mini DIPIPM 6-PAC
- PSS15S92F6-AG
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-PSS15S92F6-AG
|
Mitsubishi Electric
|
Igbt Moduliai Super Mini DIPIPM 6-PAC
|
|
|
|
|
|
|
IGBT Silicon Modules
|
6-Pack
|
600 V
|
1.7 V
|
15 A
|
|
27 W
|
|
- 30 C
|
+ 100 C
|
|
|
|
|
|
Igbt Moduliai PIM Q0 T-TYPE NPC 80A 1200V PRESS-FIT PINS
- NXH80T120L2Q0P2G
- onsemi
-
1:
58,82 €
-
23Prieinamumas
|
„Mouser“ Dalies Nr.
863-XH80T120L2Q0P2G
|
onsemi
|
Igbt Moduliai PIM Q0 T-TYPE NPC 80A 1200V PRESS-FIT PINS
|
|
23Prieinamumas
|
|
|
58,82 €
|
|
|
46,62 €
|
|
|
44,17 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Quad
|
1.2 kV
|
2.1 V
|
67 A
|
300 nA
|
158 W
|
65.9 mm x 32.5 mm x 12 mm
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
- CM450DX-24T#110G
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM450DX-24T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
|
|
|
|
|
|
|
IGBT Modules
|
Dual
|
1.2 kV
|
1.65 V
|
450 A
|
500 nA
|
2.5 kW
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES STANDARD TYPE DUAL
- CM100DY-24T
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM100DY-24T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES STANDARD TYPE DUAL
|
|
|
|
|
|
|
IGBT Modules
|
Dual
|
1.2 kV
|
1.65 V
|
100 A
|
500 nA
|
1.18 kW
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
- CM300DX-24T#110G
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM300DX-24T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
|
|
|
|
|
|
|
IGBT Modules
|
Dual
|
1.2 kV
|
1.6 V
|
300 A
|
500 nA
|
1.7 kW
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai 1200 V, 450 A dual IGBT module
- FF450R12ME7B11BPSA1
- Infineon Technologies
-
1:
99,91 €
-
17Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF450R12ME7B11BP
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 450 A dual IGBT module
|
|
17Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.5 V
|
450 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai SLLIMM nano IPM 3A 600V 3-Phase IGBT
- STGIPN3H60A
- STMicroelectronics
-
1:
6,96 €
-
467Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIPN3H60A
|
STMicroelectronics
|
Igbt Moduliai SLLIMM nano IPM 3A 600V 3-Phase IGBT
|
|
467Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
3-Phase Inverter
|
600 V
|
2.15 V
|
3 A
|
|
8 W
|
NDIP-26
|
- 40 C
|
+ 125 C
|
|
Tube
|
|
|
|
Igbt Moduliai IGBT Module 1400A 1700V
- FF1400R17IP4
- Infineon Technologies
-
1:
674,23 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
641-FF1400R17IP4
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 1400A 1700V
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Dual
|
1.7 kV
|
1.75 V
|
1.4 kA
|
400 nA
|
9.55 kW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200V 100A DUAL
Infineon Technologies FF100R12KS4
- FF100R12KS4
- Infineon Technologies
-
1:
106,57 €
-
89Prieinamumas
|
„Mouser“ Dalies Nr.
641-FF100R12KS4
|
Infineon Technologies
|
Igbt Moduliai 1200V 100A DUAL
|
|
89Prieinamumas
|
|
|
106,57 €
|
|
|
89,02 €
|
|
|
76,83 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
3.2 V
|
150 A
|
400 nA
|
780 W
|
62 mm
|
- 40 C
|
+ 125 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 150 A sixpack IGBT module
Infineon Technologies IFS150B12N3E4_B31
- IFS150B12N3E4_B31
- Infineon Technologies
-
1:
122,87 €
-
22Prieinamumas
-
30Tikėtina 2026-02-26
|
„Mouser“ Dalies Nr.
641-IFS150B12N3E4_B3
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 150 A sixpack IGBT module
|
|
22Prieinamumas
30Tikėtina 2026-02-26
|
|
|
122,87 €
|
|
|
101,70 €
|
|
|
88,19 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai PM-IGBT-TFS-SOT227
- APT100GLQ65JU3
- Microchip Technology
-
1:
22,10 €
-
75Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT100GLQ65JU3
|
Microchip Technology
|
Igbt Moduliai PM-IGBT-TFS-SOT227
|
|
75Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
650 V
|
1.85 V
|
165 A
|
150 nA
|
430 W
|
SOT-227-4
|
- 55 C
|
+ 150 C
|
|
Tube
|
|
|
|
Igbt Moduliai 1200 V, 300 A dual IGBT module
- FF300R12ME7B11BPSA1
- Infineon Technologies
-
1:
90,38 €
-
25Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF300R12ME7B11BP
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 300 A dual IGBT module
|
|
25Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.5 V
|
300 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai HYBRID PACK DRIVE G1 SI
- FS660R08A6P2FBBPSA1
- Infineon Technologies
-
1:
272,77 €
-
9Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS660R08A6P2FBBP
|
Infineon Technologies
|
Igbt Moduliai HYBRID PACK DRIVE G1 SI
|
|
9Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Hybrid IGBT Modules
|
6-Pack
|
750 V
|
1.1 V
|
450 A
|
400 nA
|
1.053 kW
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 1200 A dual IGBT module
- FF1200R12IE5
- Infineon Technologies
-
1:
542,44 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
641-FF1200R12IE5
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 1200 A dual IGBT module
|
|
11Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.7 V
|
1.2 kA
|
400 nA
|
|
PrimePACK
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 600 A dual IGBT module
- IFF600B12ME4PB11BPSA1
- Infineon Technologies
-
1:
168,40 €
-
12Prieinamumas
|
„Mouser“ Dalies Nr.
726-IFF600B12ME4PB11
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 600 A dual IGBT module
|
|
12Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.75 V
|
600 A
|
400 nA
|
|
152 mm x 62.5 mm x 20.5 mm
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT-MODULE
- FD300R06KE3
- Infineon Technologies
-
1:
110,30 €
-
2Prieinamumas
|
„Mouser“ Dalies Nr.
641-FD300R06KE3
|
Infineon Technologies
|
Igbt Moduliai IGBT-MODULE
|
|
2Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
600 V
|
1.45 V
|
300 A
|
400 nA
|
|
62 mm
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 75 A PIM three phase input rectifier IGBT module
- FP75R12KT4PB11BPSA1
- Infineon Technologies
-
1:
97,27 €
-
3Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP75R12KT4PB11BP
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 75 A PIM three phase input rectifier IGBT module
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
75 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 75 A sixpack IGBT module
- FS75R12KT4B11BPSA1
- Infineon Technologies
-
1:
72,38 €
-
14Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS75R12KT4B11BPS
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 75 A sixpack IGBT module
|
|
14Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.85 V
|
75 A
|
100 nA
|
385 W
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter bridge IGBT
- STGIPN3H60AT
- STMicroelectronics
-
1:
6,81 €
-
368Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIPN3H60AT
|
STMicroelectronics
|
Igbt Moduliai SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter bridge IGBT
|
|
368Prieinamumas
|
|
|
6,81 €
|
|
|
4,49 €
|
|
|
3,56 €
|
|
|
3,13 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
600 V
|
2.15 V
|
3 A
|
|
8 W
|
NDIP-26
|
- 40 C
|
+ 125 C
|
|
Bulk
|
|
|
|
Igbt Moduliai IGBT 6500V 750A
- FZ750R65KE3
- Infineon Technologies
-
1:
2 188,46 €
-
1Prieinamumas
|
„Mouser“ Dalies Nr.
641-FZ750R65KE3
|
Infineon Technologies
|
Igbt Moduliai IGBT 6500V 750A
|
|
1Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
6.5 kV
|
3 V
|
750 A
|
400 nA
|
3 MW
|
Module
|
- 50 C
|
+ 125 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 25 A PIM IGBT module
- FP25R12W2T4PB11BPSA1
- Infineon Technologies
-
1:
49,85 €
-
7Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP25R12W2T4PB11B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 25 A PIM IGBT module
|
|
7Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.85 V
|
25 A
|
100 nA
|
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai Super Mini DIPIPM 6-PAC
- PSS30S92F6-AG
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-PSS30S92F6-AG
|
Mitsubishi Electric
|
Igbt Moduliai Super Mini DIPIPM 6-PAC
|
|
|
|
|
|
|
IGBT Silicon Modules
|
6-Pack
|
600 V
|
1.65 V
|
30 A
|
|
47.6 W
|
|
- 30 C
|
+ 100 C
|
|
|
|