|
|
Igbt Moduliai MODULES IGBT - ECONO IGBT
- VS-GT51YF120NT
- Vishay Semiconductors
-
1:
88,89 €
-
9Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-VS-GT51YF120NT
Naujas Produktas
|
Vishay Semiconductors
|
Igbt Moduliai MODULES IGBT - ECONO IGBT
|
|
9Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Quad
|
1.2 kV
|
|
64 A
|
200 nA
|
231 W
|
ECONO-2
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai MODULES IGBT - ECONO IGBT
- VS-GT76YF120NT
- Vishay Semiconductors
-
1:
110,06 €
-
6Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-VS-GT76YF120NT
Naujas Produktas
|
Vishay Semiconductors
|
Igbt Moduliai MODULES IGBT - ECONO IGBT
|
|
6Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Quad
|
1.2 kV
|
|
118 A
|
200 nA
|
431 W
|
ECONO-2
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai EasyPACK 2B module
- F43L100R07W2S5B40BPSA1
- Infineon Technologies
-
1:
50,23 €
-
15Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-F43L100R07W2S5B4
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai EasyPACK 2B module
|
|
15Prieinamumas
|
|
|
50,23 €
|
|
|
41,51 €
|
|
|
36,94 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Module
|
|
650 V
|
1.56 V
|
80 A
|
100 nA
|
20 mW
|
EasyPACK
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai Modules IGBT - DIAP IGBT
- VS-GT400TD60S
- Vishay
-
1:
240,18 €
-
8Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT400TD60S
|
Vishay
|
Igbt Moduliai Modules IGBT - DIAP IGBT
|
|
8Prieinamumas
|
|
|
240,18 €
|
|
|
176,01 €
|
|
|
176,01 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape
|
|
|
|
Igbt Moduliai 950 V, 600 A 3-level IGBT module
- F3L600R10W4S7FC22BPSA1
- Infineon Technologies
-
1:
188,66 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
726-R10W4S7FC22BPSA1
|
Infineon Technologies
|
Igbt Moduliai 950 V, 600 A 3-level IGBT module
|
|
11Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT MODULE S-SERIES DUAL
- CM450DY-24S
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM450DY-24S
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE S-SERIES DUAL
|
|
|
|
|
|
|
IGBT Modules
|
Dual
|
1.2 kV
|
1.8 V
|
450 A
|
500 nA
|
3.33 kW
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai 1200V, 180A Tch IGBT SOT-227 Bplr Tnstr
- VS-GT180DA120U
- Vishay Semiconductors
-
1:
38,73 €
-
646Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT180DA120U
|
Vishay Semiconductors
|
Igbt Moduliai 1200V, 180A Tch IGBT SOT-227 Bplr Tnstr
|
|
646Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
1.2 kV
|
|
281 A
|
220 nA
|
1.087 kW
|
SOT-227-4
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
- CM600DX-24T#110G
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM600DX-24T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
|
|
|
|
|
|
|
IGBT Modules
|
Dual
|
1.2 kV
|
1.65 V
|
600 A
|
500 nA
|
3.125 kW
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai Modules IGBT - MTP SWITCH
- VS-50MT060PHTAPbF
- Vishay
-
1:
70,45 €
-
32Prieinamumas
-
105Tikėtina 2026-05-21
|
„Mouser“ Dalies Nr.
78-VS-50MT060PHTAPBF
|
Vishay
|
Igbt Moduliai Modules IGBT - MTP SWITCH
|
|
32Prieinamumas
105Tikėtina 2026-05-21
|
|
|
70,45 €
|
|
|
58,61 €
|
|
|
48,57 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape
|
|
|
|
Igbt Moduliai 1200 V, 900 A dual IGBT module
- FF900R12ME7WB11BPSA1
- Infineon Technologies
-
1:
190,50 €
-
6Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF900R12ME7WB11B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 900 A dual IGBT module
|
|
6Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.5 V
|
890 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1700V/85A High Voltage XPT IGBT
- IXYN30N170CV1
- IXYS
-
1:
41,42 €
-
448Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXYN30N170CV1
|
IXYS
|
Igbt Moduliai 1700V/85A High Voltage XPT IGBT
|
|
448Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
1.7 kV
|
3.5 V
|
88 A
|
100 nA
|
680 W
|
SOT-227B
|
- 55 C
|
+ 175 C
|
|
Tube
|
|
|
|
Igbt Moduliai IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
- APT75GP120JDQ3
- Microchip Technology
-
1:
40,37 €
-
2 091Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT75GP120JDQ3
|
Microchip Technology
|
Igbt Moduliai IGBT PT MOS 7 Combi 1200 V 75 A SOT-227
|
|
2 091Prieinamumas
|
|
|
40,37 €
|
|
|
37,47 €
|
|
|
37,07 €
|
|
|
34,23 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
1.2 kV
|
3.3 V
|
128 A
|
100 nA
|
543 W
|
SOT-227-4
|
- 55 C
|
+ 150 C
|
|
Tube
|
|
|
|
Igbt Moduliai Mid-Frequency Range PT IGBTs
- IXGN400N60B3
- IXYS
-
1:
49,18 €
-
486Prieinamumas
|
„Mouser“ Dalies Nr.
747-IXGN400N60B3
|
IXYS
|
Igbt Moduliai Mid-Frequency Range PT IGBTs
|
|
486Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
600 V
|
1.25 V
|
430 A
|
400 nA
|
1 kW
|
SOT-227B-4
|
- 55 C
|
+ 150 C
|
|
Tube
|
|
|
|
Igbt Moduliai Super Mini DIPIPM Version 6 6-PAC
- PSS05S92F6-AG
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-PSS05S92F6-AG
|
Mitsubishi Electric
|
Igbt Moduliai Super Mini DIPIPM Version 6 6-PAC
|
|
|
|
|
|
|
IGBT Silicon Modules
|
6-Pack
|
600 V
|
1.6 V
|
5 A
|
|
20 W
|
|
- 30 C
|
+ 100 C
|
|
|
|
|
|
Igbt Moduliai IGBT MODULE NFH-SERIES HI-FREQUENCY DUAL
- CM200DU-12NFH
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM200DU-12NFH
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE NFH-SERIES HI-FREQUENCY DUAL
|
|
|
|
|
|
|
IGBT Modules
|
Dual
|
600 V
|
2 V
|
200 A
|
500 nA
|
590 W
|
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
- FP50R12N2T7PB11BPSA1
- Infineon Technologies
-
1:
76,82 €
-
10Prieinamumas
|
„Mouser“ Dalies Nr.
726-FP50R12N2T7PB111
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 50 A PIM IGBT module
|
|
10Prieinamumas
|
|
|
76,82 €
|
|
|
62,03 €
|
|
|
53,57 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
3-Phase Inverter
|
1.2 kV
|
1.5 V
|
50 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
Infineon Technologies FS100R12N2T7B15BPSA1
- FS100R12N2T7B15BPSA1
- Infineon Technologies
-
1:
66,04 €
-
30Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS100R12N2T7B15B
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.5 V
|
100 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 75 A sixpack IGBT module
- FS75R12KE3B9BPSA1
- Infineon Technologies
-
1:
71,35 €
-
25Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS75R12KE3B9BPS1
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 75 A sixpack IGBT module
|
|
25Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.7 V
|
105 A
|
100 nA
|
355 W
|
|
- 40 C
|
+ 125 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 600 A common emitter IGBT module
- FF600R12KE4EBOSA1
- Infineon Technologies
-
1:
145,30 €
-
18Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF600R12KE4EBOSA
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 600 A common emitter IGBT module
|
|
18Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.75 V
|
600 A
|
400 nA
|
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200V, 80A Tch IGBT SOT-227 Bplr Tnstr
- VS-GT80DA120U
- Vishay Semiconductors
-
1:
31,05 €
-
160Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-GT80DA120U
|
Vishay Semiconductors
|
Igbt Moduliai 1200V, 80A Tch IGBT SOT-227 Bplr Tnstr
|
|
160Prieinamumas
|
|
|
31,05 €
|
|
|
22,88 €
|
|
|
21,31 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
Single
|
1.2 kV
|
|
139 A
|
220 nA
|
658 W
|
SOT-227-4
|
- 40 C
|
+ 150 C
|
|
|
|
|
|
Igbt Moduliai LOW POWER ECONO
- FS150R12N2T7B15BPSA1
- Infineon Technologies
-
1:
65,49 €
-
16Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS150R12N2T7B15B
|
Infineon Technologies
|
Igbt Moduliai LOW POWER ECONO
|
|
16Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.55 V
|
150 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai IGBT Module 50A 600V
- FS50R06W1E3_B11
- Infineon Technologies
-
1:
28,14 €
-
264Prieinamumas
|
„Mouser“ Dalies Nr.
641-FS50R06W1E3_B11
|
Infineon Technologies
|
Igbt Moduliai IGBT Module 50A 600V
|
|
264Prieinamumas
|
|
|
28,14 €
|
|
|
18,88 €
|
|
|
18,84 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Modules
|
6-Pack
|
600 V
|
1.45 V
|
70 A
|
400 nA
|
205 W
|
Module
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 600 A dual IGBT module
- FF600R12KE4PBOSA1
- Infineon Technologies
-
1:
145,30 €
-
65Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF600R12KE4PBOSA
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 600 A dual IGBT module
|
|
65Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
Dual
|
1.2 kV
|
1.75 V
|
600 A
|
400 nA
|
|
|
- 40 C
|
+ 150 C
|
|
Tray
|
|
|
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
- FS100R12W2T7BOMA1
- Infineon Technologies
-
1:
58,47 €
-
156Prieinamumas
|
„Mouser“ Dalies Nr.
726-FS100R12W2T7BOMA
|
Infineon Technologies
|
Igbt Moduliai 1200 V, 100 A sixpack IGBT module
|
|
156Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
IGBT Silicon Modules
|
6-Pack
|
1.2 kV
|
1.5 V
|
70 A
|
100 nA
|
|
|
- 40 C
|
+ 175 C
|
|
Tray
|
|
|
|
Igbt Moduliai Super Mini DIPIPM 6-PAC
- PSS15S92F6-AG
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-PSS15S92F6-AG
|
Mitsubishi Electric
|
Igbt Moduliai Super Mini DIPIPM 6-PAC
|
|
|
|
|
|
|
IGBT Silicon Modules
|
6-Pack
|
600 V
|
1.7 V
|
15 A
|
|
27 W
|
|
- 30 C
|
+ 100 C
|
|
|
|
Lietuva
