Grįžti į Renesas Electronics

Renesas Electronics TP65H070G4PS 650V SuperGaN® GaN FET

Renesas Electronics TP65H070G4PS 650V SuperGaN® Gallium Nitride (GaN) FET is a 650V, 70mΩ normally-off device offering superior quality and performance. The TP65H070G4PS combines high-voltage GaN HEMT and low-voltage silicon MOSFET technologies in a three-lead TO-220 package. Operating within a -55°C to +150°C temperature range, this component features 26W maximum power dissipation, an 18.4A to 29A maximum continuous drain current range, and 120A pulsed drain current (maximum). The Gen IV SuperGaN platform from Renesas Electronics uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Features

  • Gen IV technology
  • JEDEC-qualified GaN technology
  • Dynamic RDS(on)eff production tested
  • Robust design, defined by
    • Wide gate safety margin
    • Transient overvoltage capability
  • Low QRR
  • Reduced crossover loss
  • Achieves increased efficiency in both hard- and soft-switched circuits
  • Easy to drive with commonly used gate drivers
  • GSD pin layout improves the high-speed design
  • 3-lead TO-220 package
  • Halogen free and RoHS compliant

Applications

  • Datacom
  • Broad industrial
  • PV inverters
  • Servo motors
  • Computing
  • Consumer

Specifications

  • 650V maximum drain-to-source voltage
  • 800V maximum transient drain-to-source voltage
  • ±20V maximum gate-to-source voltage
  • 3.2V to 4.7V gate threshold voltage range
  • 72mΩ to 148mΩ typical drain-source on-resistance range
  • 1.2µA to 8µA typical drain-to-source leakage current range
  • ±100nA gate-to-source leakage current
  • Typical capacitance
    • 638pF input
    • 72pF output
    • 2pF reverse transfer
  • 9nC typical total gate charge
  • 3.7nC typical gate-source charge
  • 2.4nC gate-drain charge
  • 80nC output charge
  • 18A maximum reverse current
  • 1.7V to 2.4V typical reverse voltage
  • 96W maximum power dissipation at +25°C
  • Maximum continuous drain currents
    • 29A at +25°C
    • 18.4A at +100°C
  • 120A maximum pulsed drain current
  • 43.4ns typical turn-on delay
  • 6.2ns typical rise time
  • 56ns typical turn-off delay
  • 7.2ns typical fall time
  • 80ns typical reverse recovery time
  • -55°C to +150°C operating temperature range
  • +260°C maximum soldering peak temperature
  • Thermal resistance
    • 1°C/W junction-to-case
    • 62°C/W junction-to-ambient

Additional Resources

Related SuperGaN FETs

Renesas Electronics Gen IV SuperGaN® FETs

Normally off devices that enable the AC-DC bridgeless totem-pole PFC designs.

Learn Moreabout Renesas Electronics Gen IV SuperGaN® FETs View Productsrelated to Renesas Electronics Gen IV SuperGaN® FETs

Renesas Electronics TP65H070G4RS 650V SuperGaN® FET in TOLT

72mΩ RDS(on) in top-side-cooled, surface-mount TOLT package that meets the JEDEC-standard (MO-332).

Learn Moreabout Renesas Electronics TP65H070G4RS 650V SuperGaN® FET in TOLT View Productsrelated to Renesas Electronics TP65H070G4RS 650V SuperGaN® FET in TOLT

Renesas Electronics TP65H050G4YS 650V SuperGaN® FET

50mΩ gallium nitride (GaN) normally-off device available in 4 Lead TO-247 package.

Learn Moreabout Renesas Electronics TP65H050G4YS 650V SuperGaN® FET View Productsrelated to Renesas Electronics TP65H050G4YS 650V SuperGaN® FET
Paskelbta: 2023-06-01 | Atnaujinta: 2025-06-05