|
|
Gate Tvarkyklės Integrated Circuits 100 V ePower stage in FCQFN
- EPC23102
- EPC
-
1:
7,37 €
-
5 298Prieinamumas
-
3 000Tikėtina 2026-11-05
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC23102
Naujas Produktas
|
EPC
|
Gate Tvarkyklės Integrated Circuits 100 V ePower stage in FCQFN
|
|
5 298Prieinamumas
3 000Tikėtina 2026-11-05
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
GaN FET EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
- EPC2367
- EPC
-
1:
6,62 €
-
16 423Prieinamumas
-
6 000Tikėtina 2026-11-04
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC2367
Naujas Produktas
|
EPC
|
GaN FET EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
|
|
16 423Prieinamumas
6 000Tikėtina 2026-11-04
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Power Management IC Development Tools 40 ARMS 3-Phase BLDC Motor Drive Reference Design Board
- EPC91200
- EPC
-
1:
726,70 €
-
21Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC91200
Naujas Produktas
|
EPC
|
Power Management IC Development Tools 40 ARMS 3-Phase BLDC Motor Drive Reference Design Board
|
|
21Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Power Management IC Development Tools Half-Bridge Development Board, 100V/35A
- EPC90147
- EPC
-
1:
178,88 €
-
12Prieinamumas
-
20Tikėtina 2026-11-04
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC90147
Naujas Produktas
|
EPC
|
Power Management IC Development Tools Half-Bridge Development Board, 100V/35A
|
|
12Prieinamumas
20Tikėtina 2026-11-04
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Power Management IC Development Tools 10 ARMS 3-Phase BLDC Motor Drive Reference Design Board
- EPC91118
- EPC
-
1:
363,35 €
-
22Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC91118
Naujas Produktas
|
EPC
|
Power Management IC Development Tools 10 ARMS 3-Phase BLDC Motor Drive Reference Design Board
|
|
22Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
- EPC2090
- EPC
-
1:
3,59 €
-
2 374Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC2090
Naujas Produktas
|
EPC
|
GaN FET 100 V eGaN FET, 5.2 mohm Rdson, 2.3 mm x 1.45 mm, Cu pillar CSP
|
|
2 374Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
- EPC2091
- EPC
-
1:
8,37 €
-
990Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC2091
Naujas Produktas
|
EPC
|
GaN FET 100 V eGaN FET, 2 mohm Rdson, 3.23 mm x 2.88 mm, Cu pillar CSP
|
|
990Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
Gate Tvarkyklės EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
- EPC2152
- EPC
-
1:
7,87 €
-
496Prieinamumas
-
2 500Tikėtina 2026-12-24
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC2152
Naujas Produktas
|
EPC
|
Gate Tvarkyklės EPC eGaN IC, 80 V, 15 A Integrated DrGaN Symetrical Half-Bridge Power Stage
|
|
496Prieinamumas
2 500Tikėtina 2026-12-24
|
|
Min.: 1
Daugkart.: 1
:
500
|
|
|
|
|
Power Management IC Development Tools 25 ARMS 3-Phase BLDC Motor Drive Reference Design Board
- EPC9196
- EPC
-
1:
726,70 €
-
11Prieinamumas
-
11Tikėtina 2027-03-04
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
65-EPC9196
Naujas Produktas
|
EPC
|
Power Management IC Development Tools 25 ARMS 3-Phase BLDC Motor Drive Reference Design Board
|
|
11Prieinamumas
11Tikėtina 2027-03-04
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
- EPC2305
- EPC
-
1:
7,58 €
-
12 195Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2305
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
|
|
12 195Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
GaN FET EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
- EPC2307
- EPC
-
1:
4,69 €
-
9 308Prieinamumas
-
9 000Tikėtina 2027-02-16
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2307
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
|
|
9 308Prieinamumas
9 000Tikėtina 2027-02-16
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
GaN FET EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
- EPC2361
- EPC
-
1:
8,24 €
-
11 811Prieinamumas
-
18 000Tikėtina 2027-02-18
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2361
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
|
|
11 811Prieinamumas
18 000Tikėtina 2027-02-18
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Power Management IC Development Tools Half-Bridge Development Board, 200V/30A
- EPC90140
- EPC
-
1:
178,88 €
-
15Prieinamumas
-
20Tikėtina 2027-05-21
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC90140
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools Half-Bridge Development Board, 200V/30A
|
|
15Prieinamumas
20Tikėtina 2027-05-21
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Power Management IC Development Tools Half-Bridge Development Board, 100V/65A
- EPC90156
- EPC
-
1:
178,88 €
-
7Prieinamumas
-
20Tikėtina 2027-05-21
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC90156
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools Half-Bridge Development Board, 100V/65A
|
|
7Prieinamumas
20Tikėtina 2027-05-21
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Power Management IC Development Tools High Power Density, Low Profile, Synchronous Buck and Boost Converter
- EPC91106
- EPC
-
1:
447,20 €
-
3Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC91106
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools High Power Density, Low Profile, Synchronous Buck and Boost Converter
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Power Management IC Development Tools 48V/54V Input to 12 V, 50 A Dual Phase Synchronous Buck Converter
- EPC9158
- EPC
-
1:
447,20 €
-
6Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC9158
"Mouser Naujiena"
|
EPC
|
Power Management IC Development Tools 48V/54V Input to 12 V, 50 A Dual Phase Synchronous Buck Converter
|
|
6Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET eGaN FET, 50 V, 8.5 milliohm at 5 V, LGA 1.2 x 1.5 mm
- EPC2057
- EPC
-
1:
2,15 €
-
11 809Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2057
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN FET, 50 V, 8.5 milliohm at 5 V, LGA 1.2 x 1.5 mm
|
|
11 809Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
- EPC2204A
- EPC
-
1:
3,53 €
-
2 276Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2204A
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 6 milliohm at 5 V, LGA 2.5 x 1.5
|
|
2 276Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
- EPC2218A
- EPC
-
1:
6,06 €
-
2 541Prieinamumas
-
8 000Pagal užsakymą
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2218A
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
|
|
2 541Prieinamumas
8 000Pagal užsakymą
Turime sandėlyje:
2 541 Galime išsiųsti iš karto
Pagal užsakymą:
4 000 Tikėtina 2027-05-27
4 000 Tikėtina 2027-07-21
Gamintojo numatytas pristatymo laikas
33 Savaičių
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
GaN FET EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6
- EPC2234
- EPC
-
1:
12,13 €
-
457Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2234
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6
|
|
457Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
500
|
|
|
|
|
GaN FET eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA
- EPC2252
- EPC
-
1:
2,37 €
-
10 516Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2252
"Mouser Naujiena"
|
EPC
|
GaN FET eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA
|
|
10 516Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5
- EPC2619
- EPC
-
1:
4,51 €
-
6 959Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2619
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5
|
|
6 959Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,100 V, 550 milliohm at 5 V, BGA 0.9 x 0.9
- EPC2037
- EPC
-
1:
1,81 €
-
26 880Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2037
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 550 milliohm at 5 V, BGA 0.9 x 0.9
|
|
26 880Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET, 170 V, 9 milliOhm at 5 V, LGA 2.8 x 1.4
- EPC2059
- EPC
-
1:
4,07 €
-
13 744Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2059
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET, 170 V, 9 milliOhm at 5 V, LGA 2.8 x 1.4
|
|
13 744Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,200 V, 8 milliohm at 5 V, LGA 4.6 x 1.6
- EPC2215
- EPC
-
1:
6,11 €
-
10 095Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2215
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,200 V, 8 milliohm at 5 V, LGA 4.6 x 1.6
|
|
10 095Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|