CoolSiC™ 1200V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 1200V G2 Silicon Carbide MOSFETs offer high-performance solutions for power electronics applications. These MOSFETs demonstrate excellent electrical characteristics and exhibit very low switching losses, enabling efficient operation. The 1200V G2 MOSFETs are designed for overload conditions, supporting operation up to 200°C, and can withstand short circuits for up to 2µs. These devices feature a 4.2V benchmark gate threshold voltage VGS(th) and ensure precise control. The CoolSiC MOSFET 1200V G2 is available in three packages that build upon the strengths of Generation 1 technology to provide advanced solutions for more cost-optimized, efficient, compact, easy-to-design, and reliable systems. Generation 2 significantly improves key figures of merit for hard-/soft-switching topologies, ideal for all common combinations of DC-DC, AC-DC, and DC-AC stages.

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Qty. RoHS ECAD modelis Montavimo stilius
Pakuotė / Korpusas
Tranzistoriaus poliškumas
Kanalų skaičius
Vds - nutekėjimo-šaltinio pramušimo įtampa
svar. – nuolatinio išleidimo srovė
RDS On - Drain-Source Varža
Vgs - užtūros-šaltinio įtampa
Vgs th - užtūros-šaltinio slenkstinė įtampa
Qg – vartų krūvis
Minimali darbinė temperatūra
Didžiausia darbinė temperatūra
Pd - skaidos galia
Kanalas Mode
Prekinis pavadinimas
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
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959Prieinamumas
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A - 10 V, + 25 V 5.1 V 45 nC - 55 C + 175 C 244 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 40 mohm G2
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967Prieinamumas
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 48 A 40 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
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858Prieinamumas
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 78 mohm G2
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556Prieinamumas
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 28 A 78 mOhms - 10 V, + 25 V 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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1 054Prieinamumas
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 189 A 7.7 mOhms - 7 V, + 20 V 5.1 V 195 nC - 55 C + 175 C 800 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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1 189Prieinamumas
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 144 A 12.2 mOhms - 7 V, + 20 V 5.1 V 124 nC - 55 C + 175 C 600 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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3 648Prieinamumas
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 107 A 17.1 mOhms - 7 V, + 20 V 5.1 V 89 nC - 55 C + 175 C 470 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
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13Prieinamumas
1 680Pagal užsakymą
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Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 87 A 21.6 mOhms - 7 V, + 20 V 5.1 V 71 nC - 55 C + 175 C 385 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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1 900Prieinamumas
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 75 A 25.4 mOhms - 7 V, + 20 V 5.1 V 60 nC - 55 C + 175 C 335 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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475Prieinamumas
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 52 A 39.6 mOhms - 7 V, + 20 V 5.1 V 8.1 nC - 55 C + 175 C 250 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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1 651Prieinamumas
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 29 A 78.1 mOhms - 7 V, + 20 V 5.1 V 20.6 nC - 55 C + 175 C 158 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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752Prieinamumas
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 21.2 A 115.7 mOhms - 7 V, + 20 V 5.1 V 14.4 nC - 55 C + 175 C 123 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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256Prieinamumas
1 000Tikėtina 2026-03-05
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 14.9 A 181.4 mOhms - 7 V, + 20 V 5.1 V 9.7 nC - 55 C + 175 C 94 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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259Prieinamumas
5 000Pagal užsakymą
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 8.1 A 233.9 mOhms - 7 V, + 20 V 5.1 V 7.9 nC - 55 C + 175 C 80 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET 1200 V G2 in TO-263-7 package
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2 000Tikėtina 2026-06-11
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SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 41 A 52.6 mOhms - 7 V, + 20 V 5.1 V 30 nC - 55 C + 175 C 205 W Enhancement
Infineon Technologies SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
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750Tikėtina 2026-03-05
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SMD/SMT PG-HDSOP-22 N-Channel 1 Channel 1.2 kV 342 A 13.6 mOhms - 10 V, + 25 V 5.1 V 261 nC - 55 C + 175 C 1.364 kW Enhancement CoolSiC