|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R018CM2HXKSA1
- Infineon Technologies
-
1:
15,99 €
-
198Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMY120R018CM2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
198Prieinamumas
|
|
|
15,99 €
|
|
|
13,01 €
|
|
|
10,84 €
|
|
|
9,49 €
|
|
|
9,03 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
73 nC
|
- 40 C
|
+ 175 C
|
356 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036AM2HXKSA1
- Infineon Technologies
-
1:
10,85 €
-
235Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMY120R036AM2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
235Prieinamumas
|
|
|
10,85 €
|
|
|
8,49 €
|
|
|
7,08 €
|
|
|
6,19 €
|
|
|
5,89 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
171 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
- IMY120R036CM2HXKSA1
- Infineon Technologies
-
1:
10,59 €
-
225Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMY120R036CM2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 co-packed with soft, fast recovery EmitterControlled 7 diode
|
|
225Prieinamumas
|
|
|
10,59 €
|
|
|
8,28 €
|
|
|
6,91 €
|
|
|
6,05 €
|
|
|
5,74 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
44 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
37 nC
|
- 40 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R012M2HXKSA1
- Infineon Technologies
-
1:
22,90 €
-
134Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA120R012M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
134Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 10
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
|
16 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
480 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R017M2HXKSA1
- Infineon Technologies
-
1:
17,29 €
-
147Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA120R017M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
147Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 30
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
23 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R026M2HXKSA1
- Infineon Technologies
-
1:
12,85 €
-
185Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA120R026M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
185Prieinamumas
|
|
|
12,85 €
|
|
|
7,83 €
|
|
|
7,00 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 120
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
34 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
60 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
- IMZC120R007M2HXKSA1
- Infineon Technologies
-
1:
35,41 €
-
302Prieinamumas
-
480Tikėtina 2026-06-18
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R007M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology
|
|
302Prieinamumas
480Tikėtina 2026-06-18
|
|
|
35,41 €
|
|
|
30,21 €
|
|
|
26,43 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO247-4-U07
|
N-Channel
|
1 Channel
|
1.2 kV
|
201 A
|
20 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
176 nC
|
- 55 C
|
+ 175 C
|
711 W
|
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R022M2HXKSA1
- Infineon Technologies
-
1:
14,83 €
-
111Prieinamumas
-
240Tikėtina 2026-06-11
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA120R022M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
111Prieinamumas
240Tikėtina 2026-06-11
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
29 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R034M2HXKSA1
- Infineon Technologies
-
1:
10,78 €
-
138Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA120R034M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
138Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
45 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
- IMZA120R040M2HXKSA1
- Infineon Technologies
-
1:
10,27 €
-
137Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZA120R040M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2
|
|
137Prieinamumas
|
|
|
10,27 €
|
|
|
6,13 €
|
|
|
5,23 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
PG-TO247-4-U02
|
N-Channel
|
1 Channel
|
1.2 kV
|
48 A
|
51 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
39 nC
|
- 55 C
|
+ 175 C
|
218 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R012M2HHXUMA1
- Infineon Technologies
-
1:
36,64 €
-
621Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMSQ120R012M2HHX
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
621Prieinamumas
|
|
|
36,64 €
|
|
|
28,91 €
|
|
|
27,00 €
|
|
|
27,00 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
14,83 €
-
1 705Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R022M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1 705Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 50
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
80 A
|
22 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
71 nC
|
- 55 C
|
+ 175 C
|
329 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
12,14 €
-
1 855Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R026M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1 855Prieinamumas
|
|
|
12,14 €
|
|
|
8,62 €
|
|
|
7,09 €
|
|
|
6,95 €
|
|
|
6,62 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
82 A
|
67 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
63.4 nC
|
- 55 C
|
+ 175 C
|
405 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R034M2HXTMA1
- Infineon Technologies
-
1:
9,80 €
-
574Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R034M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
574Prieinamumas
|
|
|
9,80 €
|
|
|
6,89 €
|
|
|
5,56 €
|
|
|
5,19 €
|
|
|
5,19 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
64 A
|
89 mOhms
|
- 10 V, + 25 C
|
5.1 V
|
48.7 nC
|
- 55 C
|
+ 175 C
|
326 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R040M2HXTMA1
- Infineon Technologies
-
1:
9,69 €
-
270Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R040M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
270Prieinamumas
|
|
|
9,69 €
|
|
|
6,70 €
|
|
|
5,19 €
|
|
|
4,85 €
|
|
|
4,85 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
56 A
|
104 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
42.4 nC
|
- 55 C
|
+ 175 C
|
288 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
8,09 €
-
377Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R053M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
377Prieinamumas
|
|
|
8,09 €
|
|
|
5,35 €
|
|
|
4,13 €
|
|
|
3,85 €
|
|
|
3,85 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
43 A
|
138 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
32.8 nC
|
- 55 C
|
+ 175 C
|
234 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
7,14 €
-
919Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R078M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
919Prieinamumas
|
|
|
7,14 €
|
|
|
4,85 €
|
|
|
3,55 €
|
|
|
3,24 €
|
|
|
3,24 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
1 Channel
|
1.2 kV
|
31 A
|
205 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
23.2 nC
|
- 55 C
|
+ 175 C
|
176 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R026M2HHXUMA1
- Infineon Technologies
-
1:
20,21 €
-
712Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMSQ120R026M2HHX
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
712Prieinamumas
|
|
|
20,21 €
|
|
|
14,81 €
|
|
|
13,68 €
|
|
|
12,78 €
|
|
|
12,78 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R040M2HHXUMA1
- Infineon Technologies
-
1:
15,96 €
-
670Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMSQ120R040M2HHX
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
670Prieinamumas
|
|
|
15,96 €
|
|
|
11,48 €
|
|
|
10,12 €
|
|
|
9,49 €
|
|
|
9,49 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
- IMSQ120R053M2HHXUMA1
- Infineon Technologies
-
1:
13,63 €
-
331Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMSQ120R053M2HHX
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology
|
|
331Prieinamumas
|
|
|
13,63 €
|
|
|
9,69 €
|
|
|
8,19 €
|
|
|
7,65 €
|
|
|
7,65 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
|
|
|
|
1.2 kV
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
- IMZC120R012M2HXKSA1
- Infineon Technologies
-
1:
22,90 €
-
296Prieinamumas
-
480Tikėtina 2026-06-18
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R012M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 12 mohm G2
|
|
296Prieinamumas
480Tikėtina 2026-06-18
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
129 A
|
12 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
- IMZC120R017M2HXKSA1
- Infineon Technologies
-
1:
17,29 €
-
654Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R017M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 17 mohm G2
|
|
654Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
97 A
|
17 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
89 nC
|
- 55 C
|
+ 175 C
|
382 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
- IMZC120R026M2HXKSA1
- Infineon Technologies
-
1:
12,85 €
-
553Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R026M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 26 mohm G2
|
|
553Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 20
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
69 A
|
25 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
124 nC
|
- 55 C
|
+ 175 C
|
289 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
- IMZC120R034M2HXKSA1
- Infineon Technologies
-
1:
10,61 €
-
827Prieinamumas
-
240Tikėtina 2026-06-11
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R034M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 34 mohm G2
|
|
827Prieinamumas
240Tikėtina 2026-06-11
|
|
Min.: 1
Daugkart.: 1
Maks.: 70
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
55 A
|
|
- 10 V, + 25 V
|
5.1 V
|
45 nC
|
- 55 C
|
+ 175 C
|
244 W
|
Enhancement
|
CoolSiC
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
- IMZC120R053M2HXKSA1
- Infineon Technologies
-
1:
7,92 €
-
804Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R053M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 53 mohm G2
|
|
804Prieinamumas
|
|
|
7,92 €
|
|
|
4,67 €
|
|
|
4,22 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
1.2 kV
|
38 A
|
53 mOhms
|
- 10 V, + 25 V
|
5.1 V
|
30 nC
|
- 55 C
|
+ 175 C
|
182 W
|
Enhancement
|
CoolSiC
|
|
Lietuva