Grįžti į Qorvo

Qorvo GaN Transistor Solutions for Sub 6GHz 5G

Qorvo GaN Transistor Solutions for Sub-6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. Qorvo GaN Transistor Solutions for Sub-6GHz 5G provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

Related Products

Qorvo QPD0005 GaN RF Transistors

Single-stage, unmatched transistors capable of delivering PSAT of 8.7W at 48V operation.

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Qorvo QPD GaN RF Transistors

Used in Doherty architecture for the final stage of a base station power amplifier.

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Qorvo QPD1009 & QPD1010 GaN RF Transistors

Discrete GaN on SiC HEMTs which operate from DC to 4GHz constructed with the QGaN25HV process.

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Qorvo QPD1013 GaN RF Transistor

High-power, wide-bandwidth HEMT which operates from DC to 2.7GHz.

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Qorvo 5G Solutions

Support 5G deployment and growing mobile data with a broad range of RF connectivity solutions.

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Evaluation Boards

Qorvo QPD1013 GaN RF Transistor Evaluation Board

Evaluates the QPD1013 GaN RF transistor.

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Qorvo QPD0005 Evaluation Board

Designed to evaluate QPD0005 GaN single-stage, unmatched SiC RF transistors.

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View Results ( 7 ) Page
Dalies Numeris Aprašymas Duomenų Lapas
QPD0060 GaN FET DC-3.6GHz GaN 90W 48V QPD0060 Duomenų Lapas
QPD1009 GaN FET DC-4GHz 15W 28-50V SSG 24dB PAE 72% GaN QPD1009 Duomenų Lapas
QPD0030 GaN FET DC-4GHz 45W GaN 48V QPD0030 Duomenų Lapas
QPD1009-EVB1 RD kūrimo priemonės DC-4GHz 15W 28-50V Eval Board QPD1009-EVB1 Duomenų Lapas
QPD0030EVB01 RD kūrimo priemonės DC-4 GHz, 45W, 48V GaN RF Pwr Tr QPD0030EVB01 Duomenų Lapas
QPD1010-EVB1 RD kūrimo priemonės DC-4GHz 10W 28-50V Eval Board QPD1010-EVB1 Duomenų Lapas
QPD1013EVB01 RD kūrimo priemonės DC-2.7GHz 150W Eval Board QPD1013EVB01 Duomenų Lapas
Paskelbta: 2019-01-14 | Atnaujinta: 2023-11-07