|
|
SiC MOSFET CoolSiC MOSFET 750 V G2
- IMDQ75R007M2HXTMA1
- Infineon Technologies
-
1:
31,83 €
-
8 241Pagal užsakymą
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMDQ75R007M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 750 V G2
|
|
8 241Pagal užsakymą
Pagal užsakymą:
3 741 Tikėtina 2027-04-08
3 000 Tikėtina 2027-04-15
1 500 Tikėtina 2027-05-06
Gamintojo numatytas pristatymo laikas
8 Savaičių
|
|
|
31,83 €
|
|
|
25,97 €
|
|
|
22,94 €
|
|
|
21,72 €
|
|
|
21,72 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
|
|
SiC SCHOTTKY diodai SIC DIODES
- IDL10G65C5XUMA2
- Infineon Technologies
-
1:
4,41 €
-
8 091Prieinamumas
|
„Mouser“ Dalies Nr.
726-IDL10G65C5XUMA2
|
Infineon Technologies
|
SiC SCHOTTKY diodai SIC DIODES
|
|
8 091Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
SiC SCHOTTKY diodai SIC DIODES
- IDH12G65C6XKSA1
- Infineon Technologies
-
1:
5,25 €
-
6 347Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IDH12G65C6XKSA1
NRND
|
Infineon Technologies
|
SiC SCHOTTKY diodai SIC DIODES
|
|
6 347Prieinamumas
|
|
|
5,25 €
|
|
|
2,76 €
|
|
|
2,52 €
|
|
|
2,15 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Infineon EasyPIM 2B CoolSiC MOSFET module 1200 V
- FP17MR12W2M1HB31BPSA1
- Infineon Technologies
-
1:
126,02 €
-
11Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-R12W2M1HB31BPSA1
Naujas Produktas
|
Infineon Technologies
|
Infineon EasyPIM 2B CoolSiC MOSFET module 1200 V
|
|
11Prieinamumas
|
|
|
126,02 €
|
|
|
95,14 €
|
|
|
95,14 €
|
|
Min.: 1
Daugkart.: 1
:
15
|
|
|
|
|
SiC SCHOTTKY diodai SIC DIODES
- IDK06G65C5XTMA2
- Infineon Technologies
-
1:
2,95 €
-
4 551Prieinamumas
|
„Mouser“ Dalies Nr.
726-IDK06G65C5XTMA2
|
Infineon Technologies
|
SiC SCHOTTKY diodai SIC DIODES
|
|
4 551Prieinamumas
|
|
|
2,95 €
|
|
|
1,55 €
|
|
|
1,29 €
|
|
|
1,11 €
|
|
|
1,03 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R140M1HXKSA1
- Infineon Technologies
-
1:
5,63 €
-
368Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMZ120R140M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
368Prieinamumas
|
|
|
5,63 €
|
|
|
4,26 €
|
|
|
3,66 €
|
|
|
3,40 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai SIC DIODES
- IDH10SG60CXKSA2
- Infineon Technologies
-
1:
5,72 €
-
567Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IDH10SG60CXKSA2
NRND
|
Infineon Technologies
|
SiC SCHOTTKY diodai SIC DIODES
|
|
567Prieinamumas
|
|
|
5,72 €
|
|
|
3,03 €
|
|
|
2,69 €
|
|
|
2,37 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SILICON CARBIDE MOSFET
- IMT65R022M1HXUMA1
- Infineon Technologies
-
1:
14,08 €
-
2 544Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-MT65R022M1HXUMA1
NRND
|
Infineon Technologies
|
MOSFETs SILICON CARBIDE MOSFET
|
|
2 544Prieinamumas
|
|
|
14,08 €
|
|
|
9,04 €
|
|
|
8,58 €
|
|
|
8,52 €
|
|
|
8,20 €
|
|
|
7,68 €
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R057M1HXTMA1
- Infineon Technologies
-
1:
7,79 €
-
1 995Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R057M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1 995Prieinamumas
|
|
|
7,79 €
|
|
|
4,70 €
|
|
|
4,09 €
|
|
|
3,93 €
|
|
|
3,82 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
MOSFETs SILICON CARBIDE MOSFET
- IMT65R072M1HXUMA1
- Infineon Technologies
-
1:
6,68 €
-
12 072Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-MT65R072M1HXUMA1
NRND
|
Infineon Technologies
|
MOSFETs SILICON CARBIDE MOSFET
|
|
12 072Prieinamumas
|
|
|
6,68 €
|
|
|
3,72 €
|
|
|
3,41 €
|
|
|
3,25 €
|
|
|
3,08 €
|
|
|
3,08 €
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFET moduliai XHP2 module with CoolSiC Trench MOSFET and NTC
- FF1000UXTR23T2M1BPSA1
- Infineon Technologies
-
1:
3 608,12 €
-
7Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF1000UXTR23T2B1
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai XHP2 module with CoolSiC Trench MOSFET and NTC
|
|
7Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai SIC_DISCRETE
- AIDK08S65C5ATMA1
- Infineon Technologies
-
1:
5,68 €
-
717Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-AIDK08S65C5ATMA1
NRND
|
Infineon Technologies
|
SiC SCHOTTKY diodai SIC_DISCRETE
|
|
717Prieinamumas
|
|
|
5,68 €
|
|
|
3,07 €
|
|
|
2,77 €
|
|
|
2,55 €
|
|
|
2,41 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
SiC SCHOTTKY diodai SIC DIODES
- IDD10SG60CXTMA2
- Infineon Technologies
-
1:
5,66 €
-
2 689Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IDD10SG60CXTMA2
NRND
|
Infineon Technologies
|
SiC SCHOTTKY diodai SIC DIODES
|
|
2 689Prieinamumas
|
|
|
5,66 €
|
|
|
2,99 €
|
|
|
2,73 €
|
|
|
2,51 €
|
|
|
2,35 €
|
|
|
2,35 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R045M1HXTMA1
- Infineon Technologies
-
1:
11,64 €
-
617Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG120R045M1HXT
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
617Prieinamumas
|
|
|
11,64 €
|
|
|
7,09 €
|
|
|
6,99 €
|
|
|
6,57 €
|
|
|
6,12 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R022M1HXTMA1
- Infineon Technologies
-
1:
15,67 €
-
643Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R022M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
643Prieinamumas
|
|
|
15,67 €
|
|
|
9,68 €
|
|
|
9,67 €
|
|
|
9,18 €
|
|
|
9,03 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R035M1HXKSA1
- Infineon Technologies
-
1:
29,86 €
-
283Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-W120R035M1HXKSA1
NRND
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
283Prieinamumas
|
|
|
29,86 €
|
|
|
24,04 €
|
|
|
23,88 €
|
|
|
22,29 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R090M1HXTMA1
- Infineon Technologies
-
1:
5,93 €
-
839Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG120R090M1HXT
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
839Prieinamumas
|
|
|
5,93 €
|
|
|
3,88 €
|
|
|
3,66 €
|
|
|
3,63 €
|
|
|
3,36 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
SiC MOSFET SIC_DISCRETE
- AIMW120R045M1XKSA1
- Infineon Technologies
-
1:
19,20 €
-
724Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-AIMW120R045M1XKS
NRND
|
Infineon Technologies
|
SiC MOSFET SIC_DISCRETE
|
|
724Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai SIC DIODES
- IDD06SG60CXTMA2
- Infineon Technologies
-
1:
3,78 €
-
1 686Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IDD06SG60CXTMA2
NRND
|
Infineon Technologies
|
SiC SCHOTTKY diodai SIC DIODES
|
|
1 686Prieinamumas
|
|
|
3,78 €
|
|
|
1,97 €
|
|
|
1,73 €
|
|
|
1,51 €
|
|
|
1,44 €
|
|
|
1,41 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
- IMBG120R060M1HXTMA1
- Infineon Technologies
-
1:
8,75 €
-
303Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG120R060M1HXT
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package
|
|
303Prieinamumas
|
|
|
8,75 €
|
|
|
4,88 €
|
|
|
4,58 €
|
|
|
4,52 €
|
|
|
4,27 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
SiC SCHOTTKY diodai SIC_DISCRETE
- AIDK10S65C5ATMA1
- Infineon Technologies
-
1:
4,74 €
-
1 249Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-AIDK10S65C5ATMA1
Netinkama eksploatuoti
|
Infineon Technologies
|
SiC SCHOTTKY diodai SIC_DISCRETE
|
|
1 249Prieinamumas
|
|
|
4,74 €
|
|
|
3,30 €
|
|
|
2,56 €
|
|
|
2,40 €
|
|
|
2,18 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
SiC MOSFET CoolSiC Automotive Power Device 750 V G2
- AIMDQ75R020M2HXTMA1
- Infineon Technologies
-
1:
16,32 €
-
6Prieinamumas
-
750Tikėtina 2026-11-19
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-AIMDQ75R020M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC Automotive Power Device 750 V G2
|
|
6Prieinamumas
750Tikėtina 2026-11-19
|
|
|
16,32 €
|
|
|
12,13 €
|
|
|
10,49 €
|
|
|
9,93 €
|
|
|
9,93 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
|
|
|
SiC MOSFET Automotive SiC MOSFET 750V G2
- AIMBG75R020M2HXTMA1
- Infineon Technologies
-
1:
16,59 €
-
13Prieinamumas
-
1 000Pagal užsakymą
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-AIMBG75R020M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET Automotive SiC MOSFET 750V G2
|
|
13Prieinamumas
1 000Pagal užsakymą
|
|
|
16,59 €
|
|
|
11,27 €
|
|
|
9,39 €
|
|
|
9,38 €
|
|
|
8,88 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R107M1HXKSA1
- Infineon Technologies
-
1:
5,72 €
-
240Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-IMZA65R107M1HXKS
Netinkama eksploatuoti
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
240Prieinamumas
|
|
|
5,72 €
|
|
|
3,65 €
|
|
|
3,45 €
|
|
|
3,44 €
|
|
|
3,19 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai CoolSiC MOSFET half-bridge module 2300 V
- FF1300UXTR23T2M1BPSA1
- Infineon Technologies
-
1:
2 975,32 €
-
4Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF1300UXTR23T2B1
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai CoolSiC MOSFET half-bridge module 2300 V
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
