Infineon Technologies 30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1V to 3VOUT DC-DC synchronous buck converter applications.
Low RDS(on) and low Qg makes these Infineon 30V HEXFET Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads
Features
- RoHS compliant, lead-free, and halogen-free
- Optimized for high frequency switching
- Fully characterized avalanche voltage and current
- Low gate charge
- Low RDS(on)
- Wide range of package types
Applications
- Point-of-load converters
- Synchronous rectifier MOSFETs for isolated DC-DC converters in networking systems
- Synchronous MOSFETs for notebook processor power
- System load switches
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