IRLHS6242TRPBF

Infineon Technologies
942-IRLHS6242TRPBF
IRLHS6242TRPBF

Gam.:

Aprašymas:
MOSFETs 20V 1 N-CH HEXFET 11.7mOhms 14nC

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Prieinamumas: 7 932

Turime sandėlyje:
7 932 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
20 Savaičių Apytikriai apskaičiuotas gamybos laikas gamykloje, jei dalių kiekis didesnis nei nurodyta.
Min. 1   Užsakoma po 1
Vieneto kaina:
-,-- €
Plėt. Kaina:
-,-- €
Numatomas Įkainis:
Pakuotė:
Visa Ritė (Užsakoma po 4000)

Kainodara (EUR)

Qty. Vieneto kaina
Plėt. Kaina
Nukerpama juosta / „MouseReel™“ †
0,593 € 0,59 €
0,347 € 3,47 €
0,266 € 26,60 €
0,203 € 101,50 €
0,183 € 183,00 €
0,165 € 330,00 €
Visa Ritė (Užsakoma po 4000)
0,139 € 556,00 €
0,132 € 1 056,00 €
† 5,00 € „MouseReel™“ mokestis bus pridėtas ir apskaičiuotas jūsų pirkinių krepšelyje. Visi „MouseReel™“ užsakymai neatšaukiami ir negrąžinami. ↩

Produkto Požymis Atributo vertė Pasirinkite Požymį
Infineon
Gaminio kategorija: MOSFETs
RoHS:  
Si
SMD/SMT
PQFN 2x2 (DFN2020)
N-Channel
1 Channel
20 V
22 A
11.7 mOhms
- 12 V, 12 V
1.1 V
14 nC
- 55 C
+ 150 C
9.6 W
Enhancement
StrongIRFET
Reel
Cut Tape
MouseReel
Prekės Ženklas: Infineon Technologies
Configuration: Single
Gamybos šalis: Not Available
Distribucijos šalis: Not Available
Kilmės šalis: TW
Rudens laikas: 13 ns
Tiesioginis laidumas - min: 36 S
Gaminio tipas: MOSFETs
Kilimo Laikas: 15 ns
Serija: N-Channel
Gamyklinės pakuotės kiekis: 4000
Subkategorija: Transistors
Tipinė išjungimo vėlinimo trukmė: 19 ns
Tipinė įjungimo vėlinimo trukmė: 5.8 ns
Tranzistoriaus tipas: 1 N-Channel
Vieneto Svoris: 10,430 mg
Rasta produktų:
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Pasirinkti atributai: 0

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Ultra Compact PQFN HEXFET® Power MOSFETs

Infineon Ultra Compact PQFN HEXFET® Power MOSFETs deliver an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smartphones, tablet PCs, camcorders, digital still cameras, notebook PC, server and network communications equipment. 

Inductive Wireless Charging Solutions

Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits of wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging, whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.

Wireless Charging Solutions

Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.

Power MOSFETs

Infineon pioneered HEXFET power MOSFET technology, developing and introducing the first hexagonal topology MOSFETs in 1979. These developments were granted a broad patent just four years later, and since that time, most MOSFET manufacturers have licensed the designs and processes to enter this marketplace. IR products exhibit the lowest MOSFET on-resistance available on the market for similar components in their class, enabling power conversion subsystem designs that exhibit unequaled efficiency. IR combines state-of-the-art silicon technology with innovative packaging technology. IR POWIRTAB™, Super-220™, and Super-247™ packages allow up to 20A more current per device in the same footprint than standard packages, increasing power density. Compatible with standard surface-mount soldering techniques, IR's FlipFET® packaging technology offers a 100% silicon-to-footprint ratio with the same performance as a conventional package three times as big, making it the ideal solution for portable devices such as phones or notebook PCs. IR's DirectFET® packaging revolutionizes thermal management in the footprint of a standard SO-8 by drawing heat away from the board through the top of the package. As a result, DirectFET MOSFETs can double the current density while cutting thermal management costs in half in high-current circuits that power next-generation microprocessors.

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