Infineon Technologies 200V to 250V HEXFET® Power MOSFETs
Infineon 200V to 250V HEXFET® Power MOSFETs offer a broad range of MOSFETs in various packages, current and RDS(on) ratings. These 200V to 250V HEXFET Power MOSFETs utilize the latest processing techniques to achieve low on-resistance per silicon area. This benefit, combined with fast switching speed and ruggedized device design provides an extremely efficient and reliable device for use in a wide variety of applications.
Features
- Advanced process technology
- Key parameters optimized for PDP sustain, energy recovery, and pass switch applications
- Low EPULSE rating to reduce power dissipation in PDP sustain, energy recovery, and pass switch applications
- Low QG for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- 175°C operating junction temperature for improved ruggedness
- Repetitive avalanche capability for robustness and reliability
- Package options: D2PAK-3, SO-8, TO-220-3, TO-247-3, TO-251-3, TO-252-3, TO-262-3, TO-263-3
Applications
- Class D audio amplifiers
- Sustain, energy recovery, and pass switch applications in Plasma Display Panels (PDP)
- Industrial and consumer electronics
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