Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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Qty. RoHS ECAD modelis Technologijos
Pakuotė / Korpusas
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Configuration
Collector- Emitter Voltage VCEO Max
Kolektoriaus ir Emiterio Stoties Įtampa
Didžiausia vartų emiterio įtampa
Nuolatinė kolektoriaus srovė esant 25 C
Pd - skaidos galia
Minimali darbinė temperatūra
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Pakavimas
STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Duomenų Lapas
531Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 120 A 469 W - 55 C + 175 C STGWA80H65FB Tube


STMicroelectronics IGBT Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Duomenų Lapas
74Prieinamumas
„MouseReel“ galima
Min.: 1
Daugkart.: 1
Reel: 1 000

Si D2PAK SMD/SMT Single 600 V 1.8 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGB40V60F Reel, Cut Tape, MouseReel


STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Duomenų Lapas
501Prieinamumas
Min.: 1
Daugkart.: 1

Si Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGWA15H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Duomenų Lapas
1 693Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Duomenų Lapas
637Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 50 A 375 W - 55 C + 175 C STGW25H120F2 Tube
STMicroelectronics IGBT 600V 30A High Speed Trench Gate IGBT
Duomenų Lapas
1 081Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGW30V60DF Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Duomenų Lapas
1 828Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120DF2 Tube
STMicroelectronics IGBT 600V 40A High Speed Trench Gate IGBT
Duomenų Lapas
880Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40V60DF Tube
STMicroelectronics IGBT 600V 60A trench gate field-stop IGBT
Duomenų Lapas
1 186Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60H65DFB Tube
STMicroelectronics IGBT 600V 60A High Speed Trench Gate IGBT
Duomenų Lapas
1 048Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60DF Tube
STMicroelectronics IGBT Trench gte FieldStop IGBT 650V 80A
Duomenų Lapas
4 455Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 120 A 469 W - 55 C + 175 C STGW80H65DFB Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Duomenų Lapas
747Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.5 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGWA40H120DF2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
Duomenų Lapas
342Prieinamumas
1 000Tikėtina 2026-03-23
„MouseReel“ galima
Min.: 1
Daugkart.: 1
Reel: 1 000

Si D2PAK-3 SMD/SMT Single 600 V 1.85 V - 20 V, 20 V 60 A 258 W - 55 C + 175 C STGB30V60DF Reel, Cut Tape, MouseReel
STMicroelectronics IGBT 600V 20A High Speed Trench Gate IGBT
Duomenų Lapas
1 026Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-220-3 Through Hole Single 600 V 2.3 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGP20V60DF Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 15 A high speed
Duomenų Lapas
183Prieinamumas
600Tikėtina 2026-06-22
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 30 A 259 W - 55 C + 175 C STGW15H120DF2 Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
Duomenų Lapas
452Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 1.2 kV 2.1 V - 20 V, 20 V 80 A 468 W - 55 C + 175 C STGW40H120F2 Tube
STMicroelectronics IGBT 600V 40A trench gate field-stop IGBT
Duomenų Lapas
1 138Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 1.8 V - 20 V, 20 V 80 A 283 W - 55 C + 175 C STGW40H65DFB Tube
STMicroelectronics IGBT 600V 60A Trench Gate 1.8V Vce IGBT
Duomenų Lapas
258Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 600 V 2.35 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGW60V60F Tube
STMicroelectronics IGBT Trench gate field-stop IGBT, 650 V, 50 A soft switching IH series in a TO-247 lo
Duomenų Lapas
400Prieinamumas
600Tikėtina 2026-03-23
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 1.5 V - 20 V, 20 V 100 A 300 W - 55 C + 175 C HB2 Tube

STMicroelectronics IGBT Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
Duomenų Lapas
1Prieinamumas
600Tikėtina 2026-04-01
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGWA60H65DFB Tube
STMicroelectronics IGBT Trench gate field-stop 650 V, 20 A high speed HB series IGBT
Duomenų Lapas
464Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-3P Through Hole Single 650 V 1.55 V - 20 V, 20 V 40 A 168 W - 55 C + 175 C STGWT20H65FB Tube
STMicroelectronics IGBT 650V 60A HSpd trench gate field-stop IGBT
Duomenų Lapas
317Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 375 W - 55 C + 175 C STGWT60H65DFB Tube
STMicroelectronics IGBT Trench gate H series 650V 80A HiSpd
Duomenų Lapas
44Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-3P Through Hole Single 650 V 1.6 V - 20 V, 20 V 120 A 469 W - 55 C + 175 C STGWT80H65DFB Tube
STMicroelectronics IGBT 600V 20A Hi Spd TrenchGate FieldStop
Duomenų Lapas
284Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 600 V 1.8 V - 20 V, 20 V 40 A 167 W - 55 C + 175 C STGW20V60F Tube


STMicroelectronics IGBT Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Duomenų Lapas
290Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-3PF Through Hole Single 650 V 2 V - 20 V, 20 V 80 A 62.5 W - 55 C + 175 C STGFW40H65FB