|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R107M1HXKSA1
- Infineon Technologies
-
1:
3,92 €
-
444Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMZA65R107M1HXKS
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
444Prieinamumas
|
|
|
3,92 €
|
|
|
2,82 €
|
|
|
2,55 €
|
|
|
2,39 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
Diskrečiųjų Puslaidininkių Moduliai CoolSiC MOSFET half bridge module 1200 V
- FF1MR12KM1HHPSA1
- Infineon Technologies
-
1:
566,12 €
-
20Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1MR12KM1HHPSA1
|
Infineon Technologies
|
Diskrečiųjų Puslaidininkių Moduliai CoolSiC MOSFET half bridge module 1200 V
|
|
20Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
Discrete Semiconductor Modules
|
Si
|
|
|
|
|
|
Diskrečiųjų Puslaidininkių Moduliai CoolSiC MOSFET half bridge module 1200 V
- FF1MR12KM1HPHPSA1
- Infineon Technologies
-
1:
515,99 €
-
16Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF1MR12KM1HPHPSA
|
Infineon Technologies
|
Diskrečiųjų Puslaidininkių Moduliai CoolSiC MOSFET half bridge module 1200 V
|
|
16Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
Discrete Semiconductor Modules
|
Si
|
|
|
|
|
|
Diskrečiųjų Puslaidininkių Moduliai MEDIUM POWER 62MM
- FF2MR12KM1HPHPSA1
- Infineon Technologies
-
1:
442,79 €
-
13Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF2MR12KM1HPHPSA
|
Infineon Technologies
|
Diskrečiųjų Puslaidininkių Moduliai MEDIUM POWER 62MM
|
|
13Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
Discrete Semiconductor Modules
|
Si
|
|
|
|
|
|
Diskrečiųjų Puslaidininkių Moduliai 1200V, 62mm Module with CoolSiC Trench MOSFET
- FF2MR12KM1HHPSA1
- Infineon Technologies
-
1:
438,24 €
-
2Prieinamumas
-
10Tikėtina 2026-03-26
|
„Mouser“ Dalies Nr.
726-FF2MR12KM1HHPSA1
|
Infineon Technologies
|
Diskrečiųjų Puslaidininkių Moduliai 1200V, 62mm Module with CoolSiC Trench MOSFET
|
|
2Prieinamumas
10Tikėtina 2026-03-26
|
|
Min.: 1
Daugkart.: 1
|
|
Discrete Semiconductor Modules
|
SiC
|
Stud Mount
|
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R030M1HXKSA1
- Infineon Technologies
-
1:
10,05 €
-
176Prieinamumas
-
240Tikėtina 2026-03-04
|
„Mouser“ Dalies Nr.
726-IMW120R030M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
176Prieinamumas
240Tikėtina 2026-03-04
|
|
|
10,05 €
|
|
|
7,24 €
|
|
|
6,77 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R090M1HXKSA1
- Infineon Technologies
-
1:
6,35 €
-
1 180Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMW120R090M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
1 180Prieinamumas
|
|
|
6,35 €
|
|
|
3,96 €
|
|
|
3,35 €
|
|
|
3,34 €
|
|
|
3,16 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R220M1HXKSA1
- Infineon Technologies
-
1:
4,62 €
-
1 004Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMW120R220M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
1 004Prieinamumas
|
|
|
4,62 €
|
|
|
2,94 €
|
|
|
2,45 €
|
|
|
2,18 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R030M1HXKSA1
- Infineon Technologies
-
1:
12,75 €
-
840Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMZ120R030M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
840Prieinamumas
|
|
|
12,75 €
|
|
|
8,54 €
|
|
|
7,93 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R027M1HXKSA1
- Infineon Technologies
-
1:
11,38 €
-
222Prieinamumas
-
720Tikėtina 2026-07-30
|
„Mouser“ Dalies Nr.
726-IMZA65R027M1HXKS
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
222Prieinamumas
720Tikėtina 2026-07-30
|
|
|
11,38 €
|
|
|
6,91 €
|
|
|
6,06 €
|
|
|
6,02 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMZA65R048M1HXKSA1
- Infineon Technologies
-
1:
7,10 €
-
332Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMZA65R048M1HXKS
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
332Prieinamumas
|
|
|
7,10 €
|
|
|
4,51 €
|
|
|
3,86 €
|
|
|
3,80 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R027M1HXKSA1
- Infineon Technologies
-
1:
10,95 €
-
95Prieinamumas
-
240Tikėtina 2026-02-24
|
„Mouser“ Dalies Nr.
726-IMW65R027M1HXKSA
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
95Prieinamumas
240Tikėtina 2026-02-24
|
|
|
10,95 €
|
|
|
6,63 €
|
|
|
5,88 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R1K0M1XTMA1
- Infineon Technologies
-
1:
4,09 €
-
572Prieinamumas
-
4 000Tikėtina 2026-03-02
|
„Mouser“ Dalies Nr.
726-IMBF170R1K0M1XTM
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
572Prieinamumas
4 000Tikėtina 2026-03-02
|
|
|
4,09 €
|
|
|
2,70 €
|
|
|
2,03 €
|
|
|
1,84 €
|
|
|
1,52 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7
|
|
|
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R450M1XTMA1
- Infineon Technologies
-
1:
5,56 €
-
115Prieinamumas
-
1 250Tikėtina 2026-03-19
|
„Mouser“ Dalies Nr.
726-IMBF170R450M1XTM
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
115Prieinamumas
1 250Tikėtina 2026-03-19
|
|
|
5,56 €
|
|
|
3,74 €
|
|
|
2,73 €
|
|
|
2,38 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R060M1HXKSA1
- Infineon Technologies
-
1:
7,98 €
-
255Prieinamumas
-
240Tikėtina 2026-07-30
|
„Mouser“ Dalies Nr.
726-IMW120R060M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
255Prieinamumas
240Tikėtina 2026-07-30
|
|
|
7,98 €
|
|
|
4,70 €
|
|
|
3,99 €
|
|
|
3,89 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R140M1HXKSA1
- Infineon Technologies
-
1:
5,90 €
-
422Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMW120R140M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
422Prieinamumas
|
|
|
5,90 €
|
|
|
3,40 €
|
|
|
2,84 €
|
|
|
2,60 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
- IMW120R350M1HXKSA1
- Infineon Technologies
-
1:
4,61 €
-
36Prieinamumas
-
240Tikėtina 2026-02-16
|
„Mouser“ Dalies Nr.
726-IMW120R350M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-3 package
|
|
36Prieinamumas
240Tikėtina 2026-02-16
|
|
|
4,61 €
|
|
|
2,81 €
|
|
|
2,35 €
|
|
|
1,94 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R072M1HXKSA1
- Infineon Technologies
-
1:
6,20 €
-
200Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMW65R072M1HXKSA
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
200Prieinamumas
|
|
|
6,20 €
|
|
|
3,25 €
|
|
|
2,95 €
|
|
|
2,94 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R107M1HXKSA1
- Infineon Technologies
-
1:
4,97 €
-
151Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMW65R107M1HXKSA
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
151Prieinamumas
|
|
|
4,97 €
|
|
|
2,89 €
|
|
|
2,61 €
|
|
|
2,32 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R060M1HXKSA1
- Infineon Technologies
-
1:
8,36 €
-
58Prieinamumas
-
960Tikėtina 2026-06-11
|
„Mouser“ Dalies Nr.
726-IMZ120R060M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
58Prieinamumas
960Tikėtina 2026-06-11
|
|
|
8,36 €
|
|
|
5,58 €
|
|
|
5,04 €
|
|
|
4,68 €
|
|
|
4,19 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R140M1HXKSA1
- Infineon Technologies
-
1:
6,60 €
-
159Prieinamumas
-
240Tikėtina 2026-03-04
|
„Mouser“ Dalies Nr.
726-IMZ120R140M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
159Prieinamumas
240Tikėtina 2026-03-04
|
|
|
6,60 €
|
|
|
4,65 €
|
|
|
3,88 €
|
|
|
3,46 €
|
|
|
3,08 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
- IMZ120R220M1HXKSA1
- Infineon Technologies
-
1:
5,70 €
-
40Prieinamumas
-
480Tikėtina 2026-08-05
|
„Mouser“ Dalies Nr.
726-IMZ120R220M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200V SiC Trench MOSFET in TO247-4 package
|
|
40Prieinamumas
480Tikėtina 2026-08-05
|
|
|
5,70 €
|
|
|
3,27 €
|
|
|
2,68 €
|
|
|
2,43 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V in TO247-4 package
- IMZ120R350M1HXKSA1
- Infineon Technologies
-
1:
4,39 €
-
421Prieinamumas
|
„Mouser“ Dalies Nr.
726-IMZ120R350M1HXKS
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V in TO247-4 package
|
|
421Prieinamumas
|
|
|
4,39 €
|
|
|
2,53 €
|
|
|
2,17 €
|
|
|
2,12 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
|
|
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
- IMBF170R650M1XTMA1
- Infineon Technologies
-
1:
4,47 €
-
1 974Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-IMBF170R650M1XTM
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1700 V SiC Trench MOSFET in TO-263-7 package
|
|
1 974Pagal užsakymą
Pagal užsakymą:
974 Tikėtina 2026-05-28
1 000 Tikėtina 2026-06-11
Gamintojo numatytas pristatymo laikas
26 Savaičių
|
|
|
4,47 €
|
|
|
3,10 €
|
|
|
2,24 €
|
|
|
2,17 €
|
|
|
1,88 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R048M1HXKSA1
- Infineon Technologies
-
1:
7,07 €
-
480Tikėtina 2026-06-16
|
„Mouser“ Dalies Nr.
726-IMW65R048M1HXKSA
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
480Tikėtina 2026-06-16
|
|
|
7,07 €
|
|
|
4,25 €
|
|
|
3,83 €
|
|
|
3,69 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
|