|
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC / pre-applied thermalinterface material
- FF1400R23T2E7PB5BPSA1
- Infineon Technologies
-
1:
1 831,72 €
-
5Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF1400R23T2E7PB5
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC / pre-applied thermalinterface material
|
|
5Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Atminties Kortelės Industrial Compact Flash Card, C-500, 8 GB, SLC Flash, 0C to +70C
- SFCF008GH1AF2TO-C-MS-537-STD
- Swissbit
-
1:
328,08 €
-
1Prieinamumas
-
3Tikėtina 2026-04-20
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
922-610442
Naujas Produktas
|
Swissbit
|
Atminties Kortelės Industrial Compact Flash Card, C-500, 8 GB, SLC Flash, 0C to +70C
|
|
1Prieinamumas
3Tikėtina 2026-04-20
|
|
Min.: 1
Daugkart.: 1
Maks.: 5
|
|
|
|
|
Galvaniškai Izoliuotos Gate Tvarkyklės SECONDARY QFN OF SIC HV ISOLATED GATE DRIVER CHIPSET COMBO 18V
- AHV85043K18ESTR
- Allegro MicroSystems
-
1:
2,23 €
-
900Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
250-AHV85043K18ESTR
Naujas Produktas
|
Allegro MicroSystems
|
Galvaniškai Izoliuotos Gate Tvarkyklės SECONDARY QFN OF SIC HV ISOLATED GATE DRIVER CHIPSET COMBO 18V
|
|
900Prieinamumas
|
|
|
2,23 €
|
|
|
1,44 €
|
|
|
1,29 €
|
|
|
1,07 €
|
|
|
0,688 €
|
|
|
Peržiūrėti
|
|
|
0,998 €
|
|
|
0,877 €
|
|
|
0,758 €
|
|
|
0,673 €
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
Igbt Moduliai 1200V 800A QDUAL3
- SNXH800H120L7QDSG
- onsemi
-
1:
247,41 €
-
77Prieinamumas
-
24Tikėtina 2026-05-06
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-SNXH800H120L7QDS
Naujas Produktas
|
onsemi
|
Igbt Moduliai 1200V 800A QDUAL3
|
|
77Prieinamumas
24Tikėtina 2026-05-06
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 20A, TO247-3L, Industrial Grade
- ASA020V120E5
- APC-E
-
1:
4,15 €
-
254Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
896-ASA020V120E5
Naujas Produktas
|
APC-E
|
SiC SCHOTTKY diodai 1200V 20A, TO247-3L, Industrial Grade
|
|
254Prieinamumas
|
|
|
4,15 €
|
|
|
3,33 €
|
|
|
2,68 €
|
|
|
2,38 €
|
|
|
2,11 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Dvipoliai tranzistoriai – BJT NPN MULTI-CHIP
- NSVT5551DW1T1G
- onsemi
-
1:
0,843 €
-
2 841Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-NSVT5551DW1T1G
Naujas Produktas
|
onsemi
|
Dvipoliai tranzistoriai – BJT NPN MULTI-CHIP
|
|
2 841Prieinamumas
|
|
|
0,843 €
|
|
|
0,525 €
|
|
|
0,342 €
|
|
|
0,263 €
|
|
|
0,245 €
|
|
|
0,205 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 30A, TO247-3L, Industrial Grade
- ASA030V120E5
- APC-E
-
1:
6,15 €
-
274Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
896-ASA030V120E5
Naujas Produktas
|
APC-E
|
SiC SCHOTTKY diodai 1200V 30A, TO247-3L, Industrial Grade
|
|
274Prieinamumas
|
|
|
6,15 €
|
|
|
4,55 €
|
|
|
3,67 €
|
|
|
3,26 €
|
|
|
2,88 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs N-CHANNEL DEPLETION MODE
- DN2625DK6-G
- Microchip Technology
-
1:
2,88 €
-
20 623Prieinamumas
|
„Mouser“ Dalies Nr.
689-DN2625DK6-G
|
Microchip Technology
|
MOSFETs N-CHANNEL DEPLETION MODE
|
|
20 623Prieinamumas
|
|
|
2,88 €
|
|
|
2,40 €
|
|
|
2,17 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai SIC SCHOTTKY DIODE 1200V, 2x20A
- C4D40120D
- Wolfspeed
-
1:
23,98 €
-
838Prieinamumas
|
„Mouser“ Dalies Nr.
941-C4D40120D
|
Wolfspeed
|
SiC SCHOTTKY diodai SIC SCHOTTKY DIODE 1200V, 2x20A
|
|
838Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Igbt Moduliai ELECTRONIC COMPONENT
- FF300R12KS4
- Infineon Technologies
-
1:
124,23 €
-
318Prieinamumas
|
„Mouser“ Dalies Nr.
641-FF300R12KS4
|
Infineon Technologies
|
Igbt Moduliai ELECTRONIC COMPONENT
|
|
318Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 40A, TO247-3L, Industrial Grade
- ASA040V120E5
- APC-E
-
1:
6,85 €
-
281Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
896-ASA040V120E5
Naujas Produktas
|
APC-E
|
SiC SCHOTTKY diodai 1200V 40A, TO247-3L, Industrial Grade
|
|
281Prieinamumas
|
|
|
6,85 €
|
|
|
4,84 €
|
|
|
4,02 €
|
|
|
3,59 €
|
|
|
3,35 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 30V Sync Buck NexFET Power Block
- CSD87330Q3D
- Texas Instruments
-
1:
1,26 €
-
50 231Prieinamumas
|
„Mouser“ Dalies Nr.
595-CSD87330Q3D
|
Texas Instruments
|
MOSFETs 30V Sync Buck NexFET Power Block
|
|
50 231Prieinamumas
|
|
|
1,26 €
|
|
|
0,83 €
|
|
|
0,692 €
|
|
|
0,633 €
|
|
|
0,619 €
|
|
|
Peržiūrėti
|
|
|
0,599 €
|
|
|
0,591 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Low Side IntelliFET
- ZXMS6005DN8Q-13
- Diodes Incorporated
-
1:
0,851 €
-
74 562Prieinamumas
|
„Mouser“ Dalies Nr.
621-ZXMS6005DN8Q-13
|
Diodes Incorporated
|
MOSFETs Low Side IntelliFET
|
|
74 562Prieinamumas
|
|
|
0,851 €
|
|
|
0,55 €
|
|
|
0,454 €
|
|
|
0,435 €
|
|
|
0,42 €
|
|
|
0,398 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M
- BSO220N03MDGXUMA1
- Infineon Technologies
-
1:
1,04 €
-
62 857Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-BSO220N03MDGXUMA
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M
|
|
62 857Prieinamumas
|
|
|
1,04 €
|
|
|
0,649 €
|
|
|
0,427 €
|
|
|
0,331 €
|
|
|
0,301 €
|
|
|
0,246 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench
- FDMS3669S
- onsemi
-
1:
2,23 €
-
42 680Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDMS3669S
|
onsemi
|
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench
|
|
42 680Prieinamumas
|
|
|
2,23 €
|
|
|
1,44 €
|
|
|
0,989 €
|
|
|
0,789 €
|
|
|
0,735 €
|
|
|
0,735 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Mažų signalų perjungimo diodai 85V 150mW
- BAV199T-7-F
- Diodes Incorporated
-
1:
0,181 €
-
338 202Prieinamumas
|
„Mouser“ Dalies Nr.
621-BAV199T-F
|
Diodes Incorporated
|
Mažų signalų perjungimo diodai 85V 150mW
|
|
338 202Prieinamumas
|
|
|
0,181 €
|
|
|
0,124 €
|
|
|
0,076 €
|
|
|
0,061 €
|
|
|
0,056 €
|
|
|
0,039 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
- DMG6602SVT-7
- Diodes Incorporated
-
1:
0,353 €
-
406 621Prieinamumas
|
„Mouser“ Dalies Nr.
621-DMG6602SVT-7
|
Diodes Incorporated
|
MOSFETs MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K
|
|
406 621Prieinamumas
|
|
|
0,353 €
|
|
|
0,218 €
|
|
|
0,124 €
|
|
|
0,103 €
|
|
|
0,071 €
|
|
|
Peržiūrėti
|
|
|
0,08 €
|
|
|
0,064 €
|
|
|
0,058 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs LowON Res MOSFET ID=1.6A VDSS=30V
- SSM6L40TU,LF
- Toshiba
-
1:
0,525 €
-
142 425Prieinamumas
|
„Mouser“ Dalies Nr.
757-SSM6L40TULF
|
Toshiba
|
MOSFETs LowON Res MOSFET ID=1.6A VDSS=30V
|
|
142 425Prieinamumas
|
|
|
0,525 €
|
|
|
0,323 €
|
|
|
0,206 €
|
|
|
0,157 €
|
|
|
0,101 €
|
|
|
Peržiūrėti
|
|
|
0,138 €
|
|
|
0,099 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs N Ch 30Vds 20Vgs AEC-Q101 Qualified
- SQ1539EH-T1_GE3
- Vishay / Siliconix
-
1:
0,894 €
-
145 107Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ1539EH-T1_GE3
|
Vishay / Siliconix
|
MOSFETs N Ch 30Vds 20Vgs AEC-Q101 Qualified
|
|
145 107Prieinamumas
|
|
|
0,894 €
|
|
|
0,637 €
|
|
|
0,396 €
|
|
|
0,273 €
|
|
|
0,206 €
|
|
|
Peržiūrėti
|
|
|
0,23 €
|
|
|
0,176 €
|
|
|
0,163 €
|
|
|
0,148 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs P Ch -20Vds 8Vgs AEC-Q101 Qualified
- SQ3985EV-T1_GE3
- Vishay / Siliconix
-
1:
1,14 €
-
111 770Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ3985EV-T1_GE3
|
Vishay / Siliconix
|
MOSFETs P Ch -20Vds 8Vgs AEC-Q101 Qualified
|
|
111 770Prieinamumas
|
|
|
1,14 €
|
|
|
0,698 €
|
|
|
0,46 €
|
|
|
0,361 €
|
|
|
0,28 €
|
|
|
Peržiūrėti
|
|
|
0,309 €
|
|
|
0,249 €
|
|
|
0,241 €
|
|
|
0,232 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
- SQ4949EY-T1_GE3
- Vishay Semiconductors
-
1:
2,00 €
-
31 390Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ4949EY-T1_GE3
|
Vishay Semiconductors
|
MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
|
|
31 390Prieinamumas
|
|
|
2,00 €
|
|
|
1,29 €
|
|
|
0,886 €
|
|
|
0,703 €
|
|
|
0,685 €
|
|
|
0,648 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs N Ch P Ch 100/-100V AEC-Q101 Qualified
- SQJ570EP-T1_GE3
- Vishay / Siliconix
-
1:
1,51 €
-
39 262Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJ570EP-T1_GE3
|
Vishay / Siliconix
|
MOSFETs N Ch P Ch 100/-100V AEC-Q101 Qualified
|
|
39 262Prieinamumas
|
|
|
1,51 €
|
|
|
0,955 €
|
|
|
0,64 €
|
|
|
0,506 €
|
|
|
0,462 €
|
|
|
0,435 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 60V 8A 34W AEC-Q101 Qualified
- SQJ960EP-T1_GE3
- Vishay Semiconductors
-
1:
2,49 €
-
77 916Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJ960EP-T1_GE3
|
Vishay Semiconductors
|
MOSFETs 60V 8A 34W AEC-Q101 Qualified
|
|
77 916Prieinamumas
|
|
|
2,49 €
|
|
|
1,62 €
|
|
|
1,12 €
|
|
|
0,929 €
|
|
|
0,869 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 40V Vds Dual N-Ch AEC-Q101 Qualified
- SQJQ906E-T1_GE3
- Vishay / Siliconix
-
1:
3,08 €
-
12 468Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJQ906E-T1_GE3
|
Vishay / Siliconix
|
MOSFETs 40V Vds Dual N-Ch AEC-Q101 Qualified
|
|
12 468Prieinamumas
|
|
|
3,08 €
|
|
|
2,00 €
|
|
|
1,47 €
|
|
|
1,23 €
|
|
|
1,16 €
|
|
|
1,08 €
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
- STL36DN6F7
- STMicroelectronics
-
1:
1,22 €
-
42 162Prieinamumas
|
„Mouser“ Dalies Nr.
511-STL36DN6F7
|
STMicroelectronics
|
MOSFETs Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
|
|
42 162Prieinamumas
|
|
|
1,22 €
|
|
|
0,771 €
|
|
|
0,512 €
|
|
|
0,40 €
|
|
|
0,365 €
|
|
|
0,323 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
Lietuva
