|
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC / pre-applied thermalinterface material
- FF1400R23T2E7PB5BPSA1
- Infineon Technologies
-
1:
1 831,72 €
-
5Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF1400R23T2E7PB5
Naujas Produktas
|
Infineon Technologies
|
Igbt Moduliai XHP2 module with TRENCHSTOPIGBT7 and emitter controlled 7 diode and NTC / pre-applied thermalinterface material
|
|
5Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Atminties Kortelės Industrial Compact Flash Card, C-500, 8 GB, SLC Flash, 0C to +70C
- SFCF008GH1AF2TO-C-MS-537-STD
- Swissbit
-
1:
328,08 €
-
1Prieinamumas
-
3Tikėtina 2026-04-20
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
922-610442
Naujas Produktas
|
Swissbit
|
Atminties Kortelės Industrial Compact Flash Card, C-500, 8 GB, SLC Flash, 0C to +70C
|
|
1Prieinamumas
3Tikėtina 2026-04-20
|
|
Min.: 1
Daugkart.: 1
Maks.: 5
|
|
|
|
|
Galvaniškai Izoliuotos Gate Tvarkyklės SECONDARY QFN OF SIC HV ISOLATED GATE DRIVER CHIPSET COMBO 18V
- AHV85043K18ESTR
- Allegro MicroSystems
-
1:
2,23 €
-
900Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
250-AHV85043K18ESTR
Naujas Produktas
|
Allegro MicroSystems
|
Galvaniškai Izoliuotos Gate Tvarkyklės SECONDARY QFN OF SIC HV ISOLATED GATE DRIVER CHIPSET COMBO 18V
|
|
900Prieinamumas
|
|
|
2,23 €
|
|
|
1,44 €
|
|
|
1,29 €
|
|
|
1,07 €
|
|
|
0,688 €
|
|
|
Peržiūrėti
|
|
|
0,998 €
|
|
|
0,877 €
|
|
|
0,758 €
|
|
|
0,673 €
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFET
- SQJ768ELP-T1_GE3
- Vishay Semiconductors
-
1:
1,77 €
-
2 350Prieinamumas
-
3 000Pagal užsakymą
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
78-SQJ768ELP-T1_GE3
Naujas Produktas
|
Vishay Semiconductors
|
MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFET
|
|
2 350Prieinamumas
3 000Pagal užsakymą
|
|
|
1,77 €
|
|
|
1,12 €
|
|
|
0,732 €
|
|
|
0,581 €
|
|
|
Peržiūrėti
|
|
|
0,516 €
|
|
|
0,449 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Igbt Moduliai 1200V 800A QDUAL3
- SNXH800H120L7QDSG
- onsemi
-
1:
247,41 €
-
77Prieinamumas
-
24Tikėtina 2026-05-06
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-SNXH800H120L7QDS
Naujas Produktas
|
onsemi
|
Igbt Moduliai 1200V 800A QDUAL3
|
|
77Prieinamumas
24Tikėtina 2026-05-06
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 20A, TO247-3L, Industrial Grade
- ASA020V120E5
- APC-E
-
1:
4,15 €
-
254Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
896-ASA020V120E5
Naujas Produktas
|
APC-E
|
SiC SCHOTTKY diodai 1200V 20A, TO247-3L, Industrial Grade
|
|
254Prieinamumas
|
|
|
4,15 €
|
|
|
3,33 €
|
|
|
2,68 €
|
|
|
2,38 €
|
|
|
2,11 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Dvipoliai tranzistoriai – BJT NPN MULTI-CHIP
- NSVT5551DW1T1G
- onsemi
-
1:
0,843 €
-
2 841Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-NSVT5551DW1T1G
Naujas Produktas
|
onsemi
|
Dvipoliai tranzistoriai – BJT NPN MULTI-CHIP
|
|
2 841Prieinamumas
|
|
|
0,843 €
|
|
|
0,525 €
|
|
|
0,342 €
|
|
|
0,263 €
|
|
|
0,245 €
|
|
|
0,205 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 30A, TO247-3L, Industrial Grade
- ASA030V120E5
- APC-E
-
1:
6,15 €
-
274Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
896-ASA030V120E5
Naujas Produktas
|
APC-E
|
SiC SCHOTTKY diodai 1200V 30A, TO247-3L, Industrial Grade
|
|
274Prieinamumas
|
|
|
6,15 €
|
|
|
4,55 €
|
|
|
3,67 €
|
|
|
3,26 €
|
|
|
2,88 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai 1200V 40A, TO247-3L, Industrial Grade
- ASA040V120E5
- APC-E
-
1:
6,85 €
-
281Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
896-ASA040V120E5
Naujas Produktas
|
APC-E
|
SiC SCHOTTKY diodai 1200V 40A, TO247-3L, Industrial Grade
|
|
281Prieinamumas
|
|
|
6,85 €
|
|
|
4,84 €
|
|
|
4,02 €
|
|
|
3,59 €
|
|
|
3,35 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs N-CHANNEL DEPLETION MODE
- DN2625DK6-G
- Microchip Technology
-
1:
2,88 €
-
20 623Prieinamumas
|
„Mouser“ Dalies Nr.
689-DN2625DK6-G
|
Microchip Technology
|
MOSFETs N-CHANNEL DEPLETION MODE
|
|
20 623Prieinamumas
|
|
|
2,88 €
|
|
|
2,40 €
|
|
|
2,17 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai SIC SCHOTTKY DIODE 1200V, 2x20A
- C4D40120D
- Wolfspeed
-
1:
23,98 €
-
838Prieinamumas
|
„Mouser“ Dalies Nr.
941-C4D40120D
|
Wolfspeed
|
SiC SCHOTTKY diodai SIC SCHOTTKY DIODE 1200V, 2x20A
|
|
838Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Igbt Moduliai ELECTRONIC COMPONENT
- FF300R12KS4
- Infineon Technologies
-
1:
124,23 €
-
318Prieinamumas
|
„Mouser“ Dalies Nr.
641-FF300R12KS4
|
Infineon Technologies
|
Igbt Moduliai ELECTRONIC COMPONENT
|
|
318Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 30V Sync Buck NexFET Power Block
- CSD87330Q3D
- Texas Instruments
-
1:
1,26 €
-
50 231Prieinamumas
|
„Mouser“ Dalies Nr.
595-CSD87330Q3D
|
Texas Instruments
|
MOSFETs 30V Sync Buck NexFET Power Block
|
|
50 231Prieinamumas
|
|
|
1,26 €
|
|
|
0,83 €
|
|
|
0,692 €
|
|
|
0,633 €
|
|
|
0,619 €
|
|
|
Peržiūrėti
|
|
|
0,599 €
|
|
|
0,591 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs Low Side IntelliFET
- ZXMS6005DN8Q-13
- Diodes Incorporated
-
1:
0,851 €
-
74 562Prieinamumas
|
„Mouser“ Dalies Nr.
621-ZXMS6005DN8Q-13
|
Diodes Incorporated
|
MOSFETs Low Side IntelliFET
|
|
74 562Prieinamumas
|
|
|
0,851 €
|
|
|
0,55 €
|
|
|
0,454 €
|
|
|
0,435 €
|
|
|
0,42 €
|
|
|
0,398 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Optiškai Izoliuotos Gate Tvarkyklės Isolated Dual-Input Control Independent Dual-Channel Gate Driver
- MP18851-A4BGY-P
- Monolithic Power Systems (MPS)
-
1:
4,21 €
-
121Prieinamumas
|
„Mouser“ Dalies Nr.
946-MP18851A4BGYP
|
Monolithic Power Systems (MPS)
|
Optiškai Izoliuotos Gate Tvarkyklės Isolated Dual-Input Control Independent Dual-Channel Gate Driver
|
|
121Prieinamumas
|
|
|
4,21 €
|
|
|
3,18 €
|
|
|
2,93 €
|
|
|
2,65 €
|
|
|
2,02 €
|
|
|
Peržiūrėti
|
|
|
2,10 €
|
|
|
1,94 €
|
|
|
1,88 €
|
|
|
1,87 €
|
|
Min.: 1
Daugkart.: 1
:
500
|
|
|
|
|
MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M
- BSO220N03MDGXUMA1
- Infineon Technologies
-
1:
1,04 €
-
62 857Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-BSO220N03MDGXUMA
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 30V 7.7A DSO-8 OptiMOS 3M
|
|
62 857Prieinamumas
|
|
|
1,04 €
|
|
|
0,649 €
|
|
|
0,427 €
|
|
|
0,331 €
|
|
|
0,301 €
|
|
|
0,246 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
- CM450DX-24T#110G
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM450DX-24T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
|
|
|
|
|
|
|
|
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
- CM600DX-24T#110G
- Mitsubishi Electric
-
Ribotas Prieinamumas
|
„Mouser“ Dalies Nr.
917-CM600DX-24T
|
Mitsubishi Electric
|
Igbt Moduliai IGBT MODULE T-SERIES NX TYPE DUAL
|
|
|
|
|
|
|
|
|
MOSFETs Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
- STL36DN6F7
- STMicroelectronics
-
1:
1,22 €
-
42 162Prieinamumas
|
„Mouser“ Dalies Nr.
511-STL36DN6F7
|
STMicroelectronics
|
MOSFETs Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
|
|
42 162Prieinamumas
|
|
|
1,22 €
|
|
|
0,771 €
|
|
|
0,512 €
|
|
|
0,40 €
|
|
|
0,365 €
|
|
|
0,323 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Dvipoliai tranzistoriai – BJT BIPOLAR COMP.
- BC847BVN-7
- Diodes Incorporated
-
1:
0,49 €
-
147 651Prieinamumas
|
„Mouser“ Dalies Nr.
621-BC847BVN-7
|
Diodes Incorporated
|
Dvipoliai tranzistoriai – BJT BIPOLAR COMP.
|
|
147 651Prieinamumas
|
|
|
0,49 €
|
|
|
0,304 €
|
|
|
0,194 €
|
|
|
0,146 €
|
|
|
0,131 €
|
|
|
0,102 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs MOSFET N-CHANNEL P-CHANNEL SOT-563
- DMG1016V-7
- Diodes Incorporated
-
1:
0,413 €
-
268 799Prieinamumas
|
„Mouser“ Dalies Nr.
621-DMG1016V-7
|
Diodes Incorporated
|
MOSFETs MOSFET N-CHANNEL P-CHANNEL SOT-563
|
|
268 799Prieinamumas
|
|
|
0,413 €
|
|
|
0,255 €
|
|
|
0,162 €
|
|
|
0,121 €
|
|
|
0,108 €
|
|
|
0,085 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
SiC SCHOTTKY diodai SiC Schottky Barrier Diode, 1200V, 40A, 2nd Gen
- SCS240KE2GC11
- ROHM Semiconductor
-
1:
20,39 €
-
1 258Prieinamumas
|
„Mouser“ Dalies Nr.
755-SCS240KE2GC11
|
ROHM Semiconductor
|
SiC SCHOTTKY diodai SiC Schottky Barrier Diode, 1200V, 40A, 2nd Gen
|
|
1 258Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 100V Vds Dual N-Ch AEC-Q101 Qualified
- SQJQ910EL-T1_GE3
- Vishay / Siliconix
-
1:
2,90 €
-
45 451Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJQ910EL-T1_GE3
|
Vishay / Siliconix
|
MOSFETs 100V Vds Dual N-Ch AEC-Q101 Qualified
|
|
45 451Prieinamumas
|
|
|
2,90 €
|
|
|
1,89 €
|
|
|
1,32 €
|
|
|
1,14 €
|
|
|
1,08 €
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench
- FDMS3669S
- onsemi
-
1:
2,23 €
-
42 680Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDMS3669S
|
onsemi
|
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench
|
|
42 680Prieinamumas
|
|
|
2,23 €
|
|
|
1,44 €
|
|
|
0,989 €
|
|
|
0,789 €
|
|
|
0,735 €
|
|
|
0,735 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Mažų signalų perjungimo diodai 85V 150mW
- BAV199T-7-F
- Diodes Incorporated
-
1:
0,181 €
-
338 202Prieinamumas
|
„Mouser“ Dalies Nr.
621-BAV199T-F
|
Diodes Incorporated
|
Mažų signalų perjungimo diodai 85V 150mW
|
|
338 202Prieinamumas
|
|
|
0,181 €
|
|
|
0,124 €
|
|
|
0,076 €
|
|
|
0,061 €
|
|
|
0,056 €
|
|
|
0,039 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
