SemiQ SiC MOSFET Power Modules
SemiQ SiC MOSFET Power Modules provide low on-state resistance at high temperatures with excellent switching performance, simplifying power electronic systems' thermal design. The SiC MOSFET Modules operate with zero switching loss to significantly increase efficiency and reducing heat dissipation, allowing smaller heatsinks.
The SemiQ SiC MOSFET Modules have enhanced performance with powerful SiC chipsets and minimized parasitic package elements. The SiC MOSFET Modules are ideal for applications in solar inverters, power supplies, motor drives, and charging stations.
Features
- Low switching losses
- Low junction to case thermal resistance
- Very rugged and easy to mount
- Direct mounting to the heatsink (isolated package)
- High-frequency operation with ultra-low loss
- Zero reverse recovery current from SiC SBDs
- Small turn-off tail current from SiC MOSFETs
- Low stray inductance
- Normally-off device operation
Applications
- Photo voltaic inverter
- Aerospace actuators
- Server power supplies
- High voltage AC/DC converter
- Motor drivers
Typical Application
Associated Products
SemiQ GEN3 1200V SiC MOSFET galios moduliai
With an isolated backplate, based on third-generation SiC technology, and tested at over 1400V.
SemiQ SiC Schottky Diode Modules
Offers enhanced performance with robust SiC chipsets and minimized parasitic package elements.
SemiQ SiC Schottky Discrete Diodes
Features near-zero switching loss and reduced heat dissipation, increasing efficiency.
SemiQ GCMS040B120S1-E1 1200V SiC COPACK Power Module
The module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.
SemiQ GCMX040B120S1-E1 1200V SiC MOSFET Power Module
The module is simple to drive, very rugged, & easy to mount with high-speed switching SiC MOSFETs.
SemiQ GCMX 1 200 V SiC MOSFET viso tiltelio moduliai
Puikiai tinka fotovoltiniams keitikliams, energijos kaupimo sistemoms ir aukštos įtampos iš DC į DC keitikliams.
SemiQ GCMX 1 200 V SiC MOSFET pusės tiltelio Moduliai
Maži perjungimo nuostoliai, maža sandūros ir korpuso šiluminė varža, itin tvirtas bei paprastas montavimas.
| Dalies Numeris | Duomenų Lapas | Aprašymas |
|---|---|---|
| GCMS080B120S1-E1 |  |
Diskrečiųjų Puslaidininkių Moduliai SiC 1200V 80mO MOSFET & 10A SBD SOT-227 |
| GCMX040B120S1-E1 | |
MOSFET moduliai 1200V SiC MOSFET Power Module |
| GCMX080B120S1-E1 | |
MOSFET moduliai SiC 1200V 80mO MOSFET SOT-227 |
| GCMS040B120S1-E1 | |
MOSFET moduliai 1200V SiC COPACK Power Module |
| GCMX020B120S1-E1 | |
MOSFET moduliai SiC 1200V 20mohm MOSFET SOT-227 |
| GCMS020B120S1-E1 | |
Diskrečiųjų Puslaidininkių Moduliai SiC 1200V 20mohm MOSFET & 50A SBD SOT-227 |