Qorvo QPM1017 5.7GHz to 7.0GHz 100W GaN Power Amplifier
Qorvo QPM1017 5.7GHz to 7.0GHz 100W GaN Power Amplifier is a packaged, high-power C-band amplifier module, fabricated using the QGaN15 0.15μm Gallium Nitride (GaN) on Silicon Carbide (SiC) process. Covering 5.7GHz to 7.0GHz, the Qorvo QPM1017 provides 100W of saturated output power with 18dB of large signal gain while achieving >35% power-added efficiency. QPM1017 provides 40W linear power for satellite communications applications with 25dBc 3rd Order Intermodulation distortion products (IM3). The Qorvo QPM1017 is packaged in a 10-lead 19.05mm x 19.05mm bolt-down package with a copper (Cu) base for superior thermal management.
To simplify system integration, the QPM1017 is fully matched to 50Ω. The input port is DC grounded for improved ESD performance, and the output port is AC coupled with an integrated DC blocking capacitor.
Features
- 5.7GHz to 7.0GHz frequency range
- 50dBm output power at saturation (PSAT)
- 35% power added efficiency (PAE)
- 18dB large signal gain
- 24dB small signal gain
- -40°C to +85°C operating temperature range
- 19.05mm x 19.05mm x 4.5mm package with Cu base
- RoHS compliant
Applications
- C-band radar
- Satellite communications
Pin Designations
Typical Application Circuit
Package Outline
Development Tools
Qorvo QPM1017EVB1 Evaluation Board
Demonstration and development platform for the QPM1017 100W GaN Power Amplifier.
Paskelbta: 2020-07-28
| Atnaujinta: 2024-09-11