onsemi NTB110N65S3HF 650V 30A SUPERFET® III Power MOSFET

onsemi NTB110N65S3HF 650V 30A SUPERFET® III Power MOSFET is a high-voltage Super-Junction (SJ) MOSFET utilizing Charge Balance technology for outstanding low on-resistance and low gate charge performance. Charge Balance technology minimizes conduction loss, providing superior switching performance, and enabling the ability to withstand extreme dV/dt rates. The NTB110N65S3HF SUPERFET III MOSFET is ideal for power systems requiring miniaturization and high efficiency. The NTB110N65S3HF also features optimized reverse recovery body diode performance, resulting in fewer required additional components, and improved system reliability.

The NTB110N65S3HF SUPERFET III Power MOSFET is offered in a compact D2PAK-3 package. This device is Pb-free and RoHS-compliant.

Features

  • 700V at T= +150°C
  • Typical RDS(on) = 98mΩ
  • Ultra-low gate charge (typical Qg= 62nC)
  • Low effective output capacitance (typical Coss(eff.) = 522μF)
  • Excellent body diode performance (low Qrr, robust body diode)
  • Optimized capacitance
  • High system reliability at low-temperature operation
  • Low switching loss
  • High system reliability in LLC and phase shift full bridge circuit
  • Low peak Vds and low Vgs oscillation
  • 100% Avalanche tested
  • D2PAK-3 package type
  • Pb-free and RoHS-compliant

Applications

  • Telecom / server power supplies
  • Industrial power supplies
  • EV chargers
  • UPS / solar

Gate Charge Test Circuit

Application Circuit Diagram - onsemi NTB110N65S3HF 650V 30A SUPERFET® III Power MOSFET

Resistive Switching Test Circuit

Application Circuit Diagram - onsemi NTB110N65S3HF 650V 30A SUPERFET® III Power MOSFET

Inductive Switching Test Circuit

Application Circuit Diagram - onsemi NTB110N65S3HF 650V 30A SUPERFET® III Power MOSFET
Paskelbta: 2019-02-28 | Atnaujinta: 2024-01-24