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Vishay SISS94DN ThunderFET® MOSFET

Vishay SISS94DN ThunderFET® MOSFET is an N-channel 200VDS device that uses TrenchFET® with ThunderFET technology. This ThunderFET MOSFET optimizes the balance of RDS(on), Qg, Qsw, and Qoss. The device is 100% Rg and Unclamped Inductive Switching (UIS) tested. This SISS94DN MOSFET is available in a PowerPAK 1212-8S package and is Lead (Pb)-free and halogen-free (SiSS94DN-T1-GE3). The MOSFET operates from -55°C to +150°C temperature range and comes in a single configuration. Typical applications include primary side switching, synchronous rectification, DC/DC topologies, lighting, load switches, and motor drive control.

Features

  • TrenchFET with ThunderFET technology optimizes the balance of RDS(on), Qg, Qsw, and Qoss
  • Leadership RDS(on)
  • 100% Rg and UIS tested

Applications

  • Primary side switching
  • Synchronous rectification
  • DC/DC topologies
  • Lighting
  • Load switches
  • Boost converters
  • Motor drive control

Specifications

  • 200V drain-source voltage (VDS)
  • Drain-source on-state resistance [RDS(on)]:
    • 0.075Ω max. at VGS = 10V
    • 0.078Ω max. at VGS = 7.5V 
  • 11nC typical total gate charge (Qg)
  • 29nC typical output charge (Qoss)
  • 19.5A continuous drain current (ID)
  • -55°C to +150°C operating temperature range

Typical Output Characteristics

Performance Graph - Vishay SISS94DN ThunderFET® MOSFET

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Vishay SISS7xDN TrenchFET MOSFETs

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Paskelbta: 2020-09-25 | Atnaujinta: 2024-12-23