Toshiba TK065Z65Z Silicon N-Channel MOSFET
Toshiba TK065Z65Z Silicon N-Channel MOSFET is a 270W power dissipation MOSFET with high-speed switching properties and lower capacitance. This power MOSFET operates at -55°C to 150°C and 0.054Ω low drain-source on-resistance. The Toshiba TK065Z65Z MOSFET features a 3V to 4V enhancement mode, 38A continuous drain current (at 150°C), and 650V drain-source breakdown voltage. Typical applications include switching power supplies.
Features
- High-speed switching properties with lower capacitance
Specifications
- 0.054Ω low drain-source on-resistance RDS(ON)
- 3V to 4V enhancement mode
- 270W power dissipation
- -55°C to 150°C operating temperature
- 38A Drain Current (ID) at 150°C
- 650V drain-source breakdown voltage
- 62nC typical Gate Charge (Qg)
Dynamic Input/Output Characteristics
Safe Operating Area
Paskelbta: 2020-03-02
| Atnaujinta: 2024-11-08