STMicroelectronics STO67N60x MDmesh Power MOSFETs
STMicroelectronics STO67N60x MDmesh Power MOSFETs are Zener-protected and 100% avalanche-tested N-channel power MOSFETs suited for switching applications. These power MOSFETs feature excellent switching performance, low gate input resistance, and lower RDS(on) per area compared to the previous generation. The STO67N60DM6 power MOSFET is a fast-recovery body diode and combines a very low recovery charge (Qrr) and recovery time (trr) with the most effective switching behavior. The STMicroelectronics STO67N60M6 power MOSFET is ideal for LLC converters and boost PFC converters.
Features
- Reduced switching losses (STO67N60M6)
- Fast-recovery body diode (STO67N60DM6)
- Low gate input resistance (STO67N60M6)
- Low gate charge, input capacitance, and resistance (STO67N60DM6)
- 100% avalanche tested
- Zener-protected
- Extremely high dv/dt ruggedness (STO67N60DM6)
- High creepage package (STO67N60M6)
- Excellent switching performance
Applications
- Switching applications
- LLC converters (STO67N60M6)
- Boost PFC converters (STO67N60M6)
Overview
Complete Your Design
STMicroelectronics Standard Products
A broad range of drop-in replacements for general-purpose analog ICs, discretes, and serial EEPROMs.
Paskelbta: 2020-08-11
| Atnaujinta: 2025-01-14