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STMicroelectronics STGWT28IH125DF Trench Gate Field-Stop IGBT

STMicroelectronics STGWT28IH125DF Trench Gate Field-Stop IGBTs feature an advanced proprietary trench gate field-stop structure. Performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. STMicroelectronics STGWT28IH125DF IGBTs maximize efficiency for any resonant and soft-switching application.

Features

  • Designed for soft commutation only
  • +175°C maximum junction temperature
  • Minimized tail current
  • 2.0V (typ.) collector-emitter voltage @ IC= 25A
  • Tight parameters distribution
  • Safe paralleling
  • Low VF soft recovery co-packaged diode
  • Low thermal resistance
  • Lead-free package

Applications

  • Induction heating
  • Microwave ovens
  • Resonant converters

Schematic Diagram

Schematic - STMicroelectronics STGWT28IH125DF Trench Gate Field-Stop IGBT

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Paskelbta: 2015-02-03 | Atnaujinta: 2022-03-11