HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

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IGBT Transistors Si Through Hole TO-247-3


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IGBT Transistors Si Through Hole
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IGBT Transistors Si Through Hole TO-247-3
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IGBT Transistors Si SMD/SMT H2PAK-2
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IGBT Transistors Si Through Hole TO-247-3
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IGBT Transistors Si Through Hole TO-247-3
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IGBT Transistors Si SMD/SMT

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IGBT Transistors Si SMD/SMT D2PAK-3
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IGBT Transistors Si Through Hole TO-247-3
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IGBT Transistors Si Through Hole TO-247-3
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IGBT Transistors Si Through Hole TO-247-3

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IGBT Transistors Si Through Hole TO-247-3
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IGBT Transistors Si Through Hole TO-3P
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IGBT Transistors Si Through Hole TO-3P-3
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IGBT Transistors Si Through Hole TO-3P
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IGBT Transistors Si Through Hole TO-3P
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IGBT Transistors Si Through Hole TO-247-3


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IGBT Transistors Si Through Hole TO-3PF
STMicroelectronics IGBT Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 pa
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42Prieinamumas
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IGBT Transistors Si Through Hole TO-247-4
STMicroelectronics IGBT 650V 60A HSpd trench gate field-stop IGB
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219Prieinamumas
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IGBT Transistors Si Through Hole TO-3P
STMicroelectronics IGBT 650V 40A Trench Gate Field-Stop IGBT
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Min.: 1
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 600V 20A Hi Spd TrenchGate FieldStop
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IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT 650V 60A Trench Gate Field-Stop IGBT
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Daugkart.: 1

IGBT Transistors Si Through Hole TO-247-3
STMicroelectronics IGBT Trench gate field-stop, 650 V, 40 A, high-speed HB2 series IGBT in a TO-247 long
Duomenų Lapas
Vykdymo Laikas 14 Savaičių
Min.: 1
Daugkart.: 1

IGBT Transistors Si Through Hole TO-247-3