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onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFET

onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFET Module is designed for demanding power conversion applications in automotive and industrial environments. Built with advanced Silicon Carbide (SiC) technology, the onsemi NXVF6532M3TG01 delivers superior efficiency, fast switching, and robust thermal performance. The module integrates four 32mΩ SiC MOSFETs in an H-Bridge configuration, making the device ideal for use in onboard chargers (OBCs), DC-DC converters, and electric vehicle (EV) powertrain systems. Housed in a compact APM16 package with integrated temperature sensing, the component supports high power density and reliable thermal management. The NXVF6532M3TG01 is AEC-Q101/Q200 and AQG324 qualified, ensuring automotive-grade reliability and performance in harsh operating conditions.

Features

  • 650V 32mΩ SiC MOSFET module with Al2O3 DBC
  • H-Bridge with SIP for the Onboard Charger (OBC)
  • Creepage/clearance per IEC60664-1, IEC 60950-1
  • Compact design for low total module resistance
  • Module serialization for full traceability
  • Automotive Power Module 16 (APM16) package, 40.10mm x 21.90mm x 4.50mm, 1.90P, Case 829AA
  • UL 94V-0 rated
  • Lead-free and ROHS compliant
  • Automotive qualified per AEC-Q101/Q200 and AQG324

Applications

  • PFC/DC-DC converters for onboard chargers in Electric Vehicles (EVs)
  • EV powertrain systems
  • Industrial motor drives
  • Renewable energy systems

Specifications

  • 650V maximum drain-to-source voltage
  • -8V to +22V maximum gate-to-source voltage range
  • -3V to +18V maximum recommended operation values of the gate-to-source voltage
  • 31A maximum continuous drain current
  • 65.2W maximum power dissipation
  • 165A maximum pulsed drain current
  • 14.5A maximum body diode source current
  • 139mJ maximum single pulse drain-to-source Avalanche energy
  • -55°C to +175°C operating junction temperature range
  • Thermal resistance
    • 2.3°C/W maximum junction-to-case, 1.74°C/W typical
    • 2.43°C/W typical junction-to-sink

Pin Configuration and Schematic

Schematic - onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFET

Dimensions

Mechanical Drawing - onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFET
Paskelbta: 2025-07-29 | Atnaujinta: 2025-08-08