onsemi NTBG060N065SC1 44mohm Silicon Carbide MOSFET
onsemi NTBG060N065SC1 44mohm Silicon Carbide MOSFET is housed in a D2PAK-7L package and designed to be fast and rugged. The onsemi NTBG060N065SC1 devices offer a 10x higher dielectric breakdown field strength and 2x higher electron saturation velocity. The MOSFETs also offer a 3x higher energy band gap and 3x higher thermal conductivity. All onsemi SiC MOSFETs include AEC-Q101 qualified and PPAP-capable options specifically engineered and qualified for automotive and industrial applications.
Features
- Typ. RDS(on)= 44m @ VGS = 18V
- Typ. RDS(on)= 60m @ VGS = 15V
- Ultra Low Gate Charge (QG(tot) = 74nC)
- Low Output Capacitance (Coss = 133pF)
- 100% Avalanche tested
- TJ = 175°C
- RoHS compliant
Applications
- SMPS (Switching Mode Power Supplies)
- Solar inverters
- UPS (Uninterruptable Power Supplies)
- Energy storage
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onsemi EliteSiC
Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
Paskelbta: 2022-08-23
| Atnaujinta: 2023-07-27