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onsemi N-Channel 80V Automotive Power MOSFET

onsemi N-Channel 80V Automotive Power MOSFET is available in an 8mm x 8mm flat-lead package ideal for compact and efficient designs. The single N-Channel 80V device features a 1.1mΩ RDS(on) drain-source on-resistance. The MOSFET includes a wettable flank option available for enhanced optical inspection. The onsemi N-Channel 80V Automotive Power MOSFET is also AEC-Q101-qualified and PPAP-capable, making it suitable for automotive applications.

Features

  • 1.1mΩ RDS(on) drain-source resistance
  • 8mm x 8mm flat-lead compact design
  • SMD/SMT mounting style
  • 337A ID continuous drain current
  • 20V VGS gate-source
  • 4V VGS(TH) gate-source threshold
  • 80V VDS drain-source breakdown
  • 147nC Qg gate charge
  • 300W PD power dissipation
  • 19ns fall time
  • 14ns rise time
  • 66ns typical turn-off delay
  • 29ns typical turn-on delay
  • AEC-Q101 qualified and PPAP capable
  • RoHS compliant
  • -55°C to +175°C operating temperature range

Applications

  • Reverser battery protection
  • Power switches (high side driver, low side driver, H-bridges etc.)
  • Load switches for ECU, chassis, body

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Paskelbta: 2019-10-25 | Atnaujinta: 2024-02-15