Infineon Technologies EVAL 2ED2101 HB-LLC Evaluation Board
Infineon Technologies EVAL 2ED2101 HB-LLC Evaluation Board demonstrates the switching performance of the SOI high-side and low-side 2ED2101S06F Gate Driver. The 2ED2101S06F is a high voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels with resonant-tank switching frequencies in the 500kHz range.
The Infineon EVAL 2ED2101 HB-LLC Evaluation Board allows for fast prototyping and a short time to market for more rapid market entry.
Features
- Input voltage 350 - 425VDC
- Maximum 200W at 16.7A, 400VDC power input, air-flow cooling sufficient
- Overcurrent protection
- Power-up LED reporting
- Controller board with ICE2HS01G
- Auxiliary power supply with isolated 13V and 5V for secondary side supply
- PCB is 65mm × 137mm, 4 layers, 2oz. copper
- RoHS compliant
Required Equipment
- High voltage power supply (min. 430VDC, 1A current capability)
- Resistive load of max. 16.7A load current (electric load) or 0.71Ω total resistance
Associated Products
Infineon Technologies EiceDRIVER™ Isolated & Non-Isolated Gate Drivers
Gives the optimized low and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules.
Infineon Technologies CoolMOS™ Power Transistors
Low switching & conduction losses for higher efficiency, more compact size, cooler operation.
Infineon Technologies OptiMOS™ 6 Power MOSFETs
Offers next generation, cutting-edge innovation, and best-in-class performance.
Block Diagram
Component Layout
Paskelbta: 2021-04-14
| Atnaujinta: 2022-03-11