Ampleon BLF647P LDMOS Broadband Power Transistors
Ampleon BLF647P LDMOS Broadband Power Transistors are 200W LDMOS RF power transistors for broadcast transmitters and industrial applications. Suitable for the frequency range HF to 1500MHz, the excellent ruggedness and broadband performance of the BLF647P transistors make them ideal for digital applications. These transistors offer integrated ESD protection, excellent ruggedness, and high power gain/efficiency.
Features
- Integrated ESD protection
- Excellent ruggedness
- High power gain
- High efficiency
- Excellent reliability
- Easy power control
- Compliant with Directive 2002/95/EC regarding Restriction of Hazardous Substances (RoHS)
Applications
- Communication transmitter applications in the HF to 1500MHz frequency range
- Industrial applications in the HF to 1500MHz frequency range
Specifications
- Limiting values
- 65V maximum drain-source voltage
- -0.5V to 11V gate-source voltage range
- +225°C maximum junction temperature
- DC
- 65V minimum drain-source breakdown voltage
- 1.55V to 2.25V gate-source threshold voltage range
- 1.4µA maximum drain leakage current
- 20A typical drain cut-off current
- 140nA maximum gate leakage current
- 7.6S typical forward transconductance
- 140mΩ typical drain-source on-state resistance
- AC
- 78pF typical input capacitance
- 30pF typical output capacitance
- 1.3pF typical feedback capacitance
- RF
- 17.5dB or 18dB typical power gain options
- 70% typical drain efficiency
- 2700MHz to 3100MHz frequency range
- 0.34K/W typical junction-to-case thermal resistance
- SOT1121A and SOT1121B package options
Resources
- Application Note AN10896 - Mounting and Soldering of RF Transistors in Air Cavity Packages
- AR212016 - Measurement results of the BLF647P LDMOS Device in Board #AR212016 tuned for 30MHz to 520MHz at 28V
Paskelbta: 2025-02-12
| Atnaujinta: 2025-11-11