Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency. 

The CoolSiC M1 MOSFETs are offered in a compact TO-247 3-pin/4-pin package and are Pb-free, halogen-free, and RoHS-compliant.

Features

  • Low capacitances
  • Optimized switching behavior at higher currents
  • Commutation robust, fast body diode with low reverse recovery charge (Qrr)
  • Superior gate oxide reliability
  • Excellent thermal behavior
  • Increased avalanche capability
  • Works with standard drivers
  • High performance, high reliability, and ease of use
  • Allows high system efficiency
  • Reduces system cost and complexity
  • Enables smaller system size
  • Works in topologies with continuous hard commutation
  • Fit for high temperature and harsh operations
  • Enables bi-directional topologies

Applications

  • Servers
  • Telecom
  • SMPS
  • Energy storage and battery formation
  • Solar energy systems / solar PV inverters
  • UPS
  • EV charging infrastructure
  • Motor drives
  • Class D amplifiers

Videos

Package Outline (TO-247 3-pin)

Mechanical Drawing - Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs

Package Outline (TO-247 4-pin)

Mechanical Drawing - Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs
View Results ( 26 ) Page
Dalies Numeris Duomenų Lapas Pakuotė / Korpusas svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Qg – vartų krūvis Pd - skaidos galia
IMBG65R057M1HXTMA1 IMBG65R057M1HXTMA1 Duomenų Lapas 39 A 74 mOhms 28 nC 161 W
IMZA65R039M1HXKSA1 IMZA65R039M1HXKSA1 Duomenų Lapas TO-247-4 50 A 50 mOhms 41 nC 176 W
IMBG65R022M1HXTMA1 IMBG65R022M1HXTMA1 Duomenų Lapas 64 A 30 mOhms 67 nC 300 W
IMZA65R107M1HXKSA1 IMZA65R107M1HXKSA1 Duomenų Lapas TO-247-4 20 A 142 mOhms 15 nC 75 W
IMBG65R048M1HXTMA1 IMBG65R048M1HXTMA1 Duomenų Lapas 45 A 64 mOhms 33 nC 183 W
IMBG65R072M1HXTMA1 IMBG65R072M1HXTMA1 Duomenų Lapas 33 A 94 mOhms 22 nC 140 W
IMBG65R107M1HXTMA1 IMBG65R107M1HXTMA1 Duomenų Lapas 24 A 141 mOhms 35 nC 110 W
IMW65R027M1HXKSA1 IMW65R027M1HXKSA1 Duomenų Lapas TO-247-3 47 A 34 mOhms 62 nC 189 W
IMW65R048M1HXKSA1 IMW65R048M1HXKSA1 Duomenų Lapas TO-247-3 39 A 64 mOhms 33 nC 125 W
IMZA65R027M1HXKSA1 IMZA65R027M1HXKSA1 Duomenų Lapas TO-247-4 59 A 34 mOhms 63 nC 189 W
Paskelbta: 2020-01-22 | Atnaujinta: 2024-09-23