|
|
MOSFET moduliai N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP packa
- STE145N65M5
- STMicroelectronics
-
1:
28,53 €
-
760Prieinamumas
|
„Mouser“ Dalies Nr.
511-STE145N65M5
|
STMicroelectronics
|
MOSFET moduliai N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP packa
|
|
760Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
|
Si
|
Screw Mount
|
ISOTOP
|
|
|
|
Igbt Moduliai SLLIMM nano IPM 3A 600V 3-Phase IGBT
- STGIPN3H60A
- STMicroelectronics
-
1:
7,84 €
-
466Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIPN3H60A
|
STMicroelectronics
|
Igbt Moduliai SLLIMM nano IPM 3A 600V 3-Phase IGBT
|
|
466Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
Through Hole
|
NDIP-26
|
|
|
|
Pažangieji maitinimo moduliai - IPM SLLIMM nano 2nd series IPM, 3-phase inverter, 6 A, 600 V, short-circuit rugged I
- STGIPQ4C60T-HZ
- STMicroelectronics
-
1:
8,20 €
-
321Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIPQ4C60T-HZ
|
STMicroelectronics
|
Pažangieji maitinimo moduliai - IPM SLLIMM nano 2nd series IPM, 3-phase inverter, 6 A, 600 V, short-circuit rugged I
|
|
321Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
Intelligent Power Modules - IPMs
|
|
Si
|
Through Hole
|
N2DIP-26L
|
|
|
|
Igbt Moduliai SLLIMM 2nd,3phs 10A,600V shrt-crct
- STGIB10CH60TS-L
- STMicroelectronics
-
1:
12,35 €
-
148Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIB10CH60TS-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd,3phs 10A,600V shrt-crct
|
|
148Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
Through Hole
|
SDIP2B-26
|
|
|
|
Igbt Moduliai SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter IGBT
- STGIPNS3H60T-H
- STMicroelectronics
-
1:
7,20 €
-
340Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIPNS3H60T-H
|
STMicroelectronics
|
Igbt Moduliai SLLIMM nano IPM, 3 A, 600 V, 3-phase inverter IGBT
|
|
340Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
400
|
|
IGBT Modules
|
IGBT Silicon Modules
|
Si
|
SMD/SMT
|
NSDIP-26
|
|
|
|
Igbt Moduliai ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC
- A2C25S12M3
- STMicroelectronics
-
1:
51,23 €
-
33Prieinamumas
|
„Mouser“ Dalies Nr.
511-A2C25S12M3
|
STMicroelectronics
|
Igbt Moduliai ACEPACK 2 converter inverter brake, 1200 V, 25 A trench gate field-stop IGBT M series, soft diode and NTC
|
|
33Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
Through Hole
|
ACEPACK2
|
|
|
|
MOSFET moduliai ACEPACK 2 power module triple boost 650V 49 mOhm half-bridge 23.5mOhm SiC MOSFET
- A2TBH45M65W3-FC
- STMicroelectronics
-
1:
72,91 €
-
36Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-A2TBH45M65W3-FC
Naujas Produktas
|
STMicroelectronics
|
MOSFET moduliai ACEPACK 2 power module triple boost 650V 49 mOhm half-bridge 23.5mOhm SiC MOSFET
|
|
36Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
MOSFET Modules
|
|
Press Fit
|
ACEPACK
|
|
|
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, sixpac topology, 1200 V, 47.5 mOhm typ. SiC Power MOSFET with NTC
- M2P45M12W2-1LA
- STMicroelectronics
-
1:
56,00 €
-
124Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-M2P45M12W2-1LA
Naujas Produktas
|
STMicroelectronics
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, sixpac topology, 1200 V, 47.5 mOhm typ. SiC Power MOSFET with NTC
|
|
124Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
Power Modules
|
|
Press Fit
|
|
|
|
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 1200 V, 84 mOhm typ. SiC Power MOSFET with rectifier diode and NTC
- M2TP80M12W2-2LA
- STMicroelectronics
-
1:
45,31 €
-
127Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-M2TP80M12W2-2LA
Naujas Produktas
|
STMicroelectronics
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, 3-phase four wire PFC topology, 1200 V, 84 mOhm typ. SiC Power MOSFET with rectifier diode and NTC
|
|
127Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
Power Modules
|
|
Press Fit
|
|
|
|
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, fourpack topology, 1200V 47.5 mOhm
- M1F45M12W2-1LA
- STMicroelectronics
-
1:
45,31 €
-
519Prieinamumas
|
„Mouser“ Dalies Nr.
511-M1F45M12W2-1LA
|
STMicroelectronics
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, fourpack topology, 1200V 47.5 mOhm
|
|
519Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
|
SiC
|
SMD/SMT
|
|
|
|
|
MOSFET moduliai ACEPACK 2 power module, 3-level topology, SiC Power MOSFETs 750 & 1200V 100 A
- A2U8M12W3-FC
- STMicroelectronics
-
1:
152,20 €
-
18Prieinamumas
|
„Mouser“ Dalies Nr.
511-A2U8M12W3-FC
|
STMicroelectronics
|
MOSFET moduliai ACEPACK 2 power module, 3-level topology, SiC Power MOSFETs 750 & 1200V 100 A
|
|
18Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
|
SiC
|
Press Fit
|
56.7 mm x 48 mm
|
|
|
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, 1200 V, 47.5 mOhm SiC MOSFET NTC
- M1P45M12W2-1LA
- STMicroelectronics
-
1:
51,81 €
-
108Prieinamumas
|
„Mouser“ Dalies Nr.
511-M1P45M12W2-1LA
|
STMicroelectronics
|
MOSFET moduliai Automotive-grade ACEPACK DMT-32 power module, 1200 V, 47.5 mOhm SiC MOSFET NTC
|
|
108Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
|
SiC
|
Press Fit
|
ACEPACK DMT-32
|
|
|
|
MOSFET moduliai SLLIMM 2nd series IPM, 3-phase inverter 0.15 Ohm typ., 15 A, 600 V Power MOSFET
- STIB1560DM2-Z
- STMicroelectronics
-
1:
15,45 €
-
136Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
511-STIB1560DM2-Z
"Mouser Naujiena"
|
STMicroelectronics
|
MOSFET moduliai SLLIMM 2nd series IPM, 3-phase inverter 0.15 Ohm typ., 15 A, 600 V Power MOSFET
|
|
136Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
|
Si
|
Press Fit
|
SDIP2B-26
|
|
|
|
Igbt Moduliai SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
- STGIPQ5C60T-HLS
- STMicroelectronics
-
1:
8,15 €
-
258Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIPQ5C60T-HLS
|
STMicroelectronics
|
Igbt Moduliai SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
|
|
258Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Silicon Modules
|
Si
|
|
|
|
|
|
MOSFET moduliai SLLIMM 2nd series IPM, 3-phase inverter 0.15 Ohm typ., 15 A, 600 V Power MOSFET
- STIB1560DM2T-LZ
- STMicroelectronics
-
1:
17,48 €
-
139Prieinamumas
|
„Mouser“ Dalies Nr.
511-STIB1560DM2T-LZ
|
STMicroelectronics
|
MOSFET moduliai SLLIMM 2nd series IPM, 3-phase inverter 0.15 Ohm typ., 15 A, 600 V Power MOSFET
|
|
139Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
MOSFET Modules
|
|
Si
|
|
|
|
|
|
Igbt Moduliai SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs
- STGIB15CH60S-L
- STMicroelectronics
-
1:
13,10 €
-
78Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIB15CH60S-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd series IPM, 3-phase inverter, 20 A, 600 V short-circuit rugged IGBTs
|
|
78Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
|
|
|
|
|
Igbt Moduliai SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs
- STGIB8CH60TS-L
- STMicroelectronics
-
1:
12,72 €
-
3Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIB8CH60TS-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd series IPM, 3-phase inverter, 12 A, 600 V short-circuit rugged IGBTs
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
Through Hole
|
SDIP2B-26
|
|
|
|
Igbt Moduliai SLLIMM 2nd,3phs 600V shrt-crct
- STGIF10CH60TS-L
- STMicroelectronics
-
1:
11,89 €
-
87Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIF10CH60TS-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd,3phs 600V shrt-crct
|
|
87Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
Through Hole
|
SDIP2F-26
|
|
|
|
Igbt Moduliai SLIMM Nano 3A 600V 3-Phase IGBT Bridge
- STGIPN3H60
- STMicroelectronics
-
1:
8,09 €
-
74Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIPN3H60
|
STMicroelectronics
|
Igbt Moduliai SLIMM Nano 3A 600V 3-Phase IGBT Bridge
|
|
74Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
Through Hole
|
NDIP-26
|
|
|
|
Igbt Moduliai SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT
- STGIPQ3H60T-HZS
- STMicroelectronics
-
1:
7,87 €
-
87Prieinamumas
|
„Mouser“ Dalies Nr.
511-STGIPQ3H60T-HZS
|
STMicroelectronics
|
Igbt Moduliai SLLIMM nano 2nd series IPM, 3-phase inverter, 3 A, 600 V, IGBT
|
|
87Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
|
|
|
|
|
Igbt Moduliai SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
- STGIPQ5C60T-HZ
- STMicroelectronics
-
1:
7,76 €
-
9Prieinamumas
-
360Tikėtina 2026-11-06
|
„Mouser“ Dalies Nr.
511-STGIPQ5C60T-HZ
|
STMicroelectronics
|
Igbt Moduliai SLLIMM nano 2nd series IPM, 3-phase inverter, 5 A, 600 V, short-circuit rugged I
|
|
9Prieinamumas
360Tikėtina 2026-11-06
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
SiC IGBT Modules
|
SiC
|
Through Hole
|
N2DIP-26
|
|
|
|
Igbt Moduliai SLLIMM nano 2nd series IPM, 3-phase inverter, 8 A, 600 V, short-circuit rugged I
- STGIPQ8C60T-HZ
- STMicroelectronics
-
1:
7,39 €
-
203Prieinamumas
-
360Tikėtina 2026-10-01
|
„Mouser“ Dalies Nr.
511-STGIPQ8C60T-HZ
|
STMicroelectronics
|
Igbt Moduliai SLLIMM nano 2nd series IPM, 3-phase inverter, 8 A, 600 V, short-circuit rugged I
|
|
203Prieinamumas
360Tikėtina 2026-10-01
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Silicon Modules
|
Si
|
Through Hole
|
N2DIP-26
|
|
|
|
Igbt Moduliai N-Ch 600 Volt 150Amp
- STGE200NB60S
- STMicroelectronics
-
1:
26,15 €
-
300Tikėtina 2027-05-21
|
„Mouser“ Dalies Nr.
511-STGE200NB60S
|
STMicroelectronics
|
Igbt Moduliai N-Ch 600 Volt 150Amp
|
|
300Tikėtina 2027-05-21
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
Through Hole
|
ISOTOP-4
|
|
|
|
Igbt Moduliai SLLIMM 2nd,3phs 15A,600V shrt-crct
- STGIB15CH60TS-L
- STMicroelectronics
-
1:
12,31 €
-
1 246Pagal užsakymą
|
„Mouser“ Dalies Nr.
511-STGIB15CH60TS-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd,3phs 15A,600V shrt-crct
|
|
1 246Pagal užsakymą
Pagal užsakymą:
466 Tikėtina 2026-11-13
780 Tikėtina 2026-12-11
Gamintojo numatytas pristatymo laikas
22 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
Through Hole
|
SDIP2B-26
|
|
|
|
Igbt Moduliai SLLIMM 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBT
- STGIB20M60TS-L
- STMicroelectronics
-
1:
13,57 €
-
312Tikėtina 2027-07-02
|
„Mouser“ Dalies Nr.
511-STGIB20M60TS-L
|
STMicroelectronics
|
Igbt Moduliai SLLIMM 2nd series IPM, 3-phase inverter, 25 A, 600 V short-circuit rugged IGBT
|
|
312Tikėtina 2027-07-02
|
|
Min.: 1
Daugkart.: 1
|
|
IGBT Modules
|
IGBT Modules
|
Si
|
Through Hole
|
SDIP2B-26
|
|