|
|
MOSFETs NFET DFN8 60V 17A 39MOHM
- NVMFD5877NLWFT1G-UM
- onsemi
-
1:
1,59 €
-
1 050Prieinamumas
-
1 500Tikėtina 2026-12-29
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-FD5877NLWFT1G-UM
Naujas Produktas
|
onsemi
|
MOSFETs NFET DFN8 60V 17A 39MOHM
|
|
1 050Prieinamumas
1 500Tikėtina 2026-12-29
|
|
|
1,59 €
|
|
|
0,859 €
|
|
|
0,657 €
|
|
|
0,657 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 245
:
1 500
|
|
|
|
|
Dvipoliai tranzistoriai – BJT NPN MULTI-CHIP
- NSVT5551DW1T1G
- onsemi
-
1:
0,929 €
-
2 656Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-NSVT5551DW1T1G
Naujas Produktas
|
onsemi
|
Dvipoliai tranzistoriai – BJT NPN MULTI-CHIP
|
|
2 656Prieinamumas
|
|
|
0,929 €
|
|
|
0,574 €
|
|
|
0,378 €
|
|
|
0,297 €
|
|
|
0,261 €
|
|
|
0,261 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 1 500
:
3 000
|
|
|
|
|
MOSFETs N-CHANNEL DEPLETION MODE
- DN2625DK6-G
- Microchip Technology
-
1:
2,70 €
-
20 067Prieinamumas
|
„Mouser“ Dalies Nr.
689-DN2625DK6-G
|
Microchip Technology
|
MOSFETs N-CHANNEL DEPLETION MODE
|
|
20 067Prieinamumas
|
|
|
2,70 €
|
|
|
2,49 €
|
|
|
2,25 €
|
|
|
2,12 €
|
|
|
Peržiūrėti
|
|
|
2,11 €
|
|
|
2,05 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Lygintuvai THYR / DIODE MODULE DK
- DD600N16KXPSA1
- Infineon Technologies
-
1:
318,13 €
-
7Prieinamumas
|
„Mouser“ Dalies Nr.
726-DD600N16KXPSA1
|
Infineon Technologies
|
Lygintuvai THYR / DIODE MODULE DK
|
|
7Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai Automotive 60V, Schottky, 10A
- MBR1060DC-AU_R2_006A1
- Panjit
-
1:
1,01 €
-
6 227Prieinamumas
|
„Mouser“ Dalies Nr.
241-MBR1060DCAUR26A1
|
Panjit
|
SCHOTTKY Diodes ir Lygintuvai Automotive 60V, Schottky, 10A
|
|
6 227Prieinamumas
|
|
|
1,01 €
|
|
|
0,47 €
|
|
|
0,416 €
|
|
|
0,324 €
|
|
|
0,324 €
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
|
|
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench
- FDMS3669S
- onsemi
-
1:
2,38 €
-
42 666Prieinamumas
|
„Mouser“ Dalies Nr.
512-FDMS3669S
|
onsemi
|
MOSFETs 30V Asymmetric Dual N-Channel Pwr Trench
|
|
42 666Prieinamumas
|
|
|
2,38 €
|
|
|
1,18 €
|
|
|
1,06 €
|
|
|
0,846 €
|
|
|
0,749 €
|
|
|
0,724 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Mažų signalų perjungimo diodai 85V 150mW
- BAV199T-7-F
- Diodes Incorporated
-
1:
0,31 €
-
323 750Prieinamumas
|
„Mouser“ Dalies Nr.
621-BAV199T-F
|
Diodes Incorporated
|
Mažų signalų perjungimo diodai 85V 150mW
|
|
323 750Prieinamumas
|
|
|
0,31 €
|
|
|
0,137 €
|
|
|
0,119 €
|
|
|
0,113 €
|
|
|
0,099 €
|
|
|
0,061 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFETs N Ch 30Vds 20Vgs AEC-Q101 Qualified
- SQ1539EH-T1_GE3
- Vishay / Siliconix
-
1:
0,748 €
-
139 390Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ1539EH-T1_GE3
|
Vishay / Siliconix
|
MOSFETs N Ch 30Vds 20Vgs AEC-Q101 Qualified
|
|
139 390Prieinamumas
|
|
|
0,748 €
|
|
|
0,341 €
|
|
|
0,30 €
|
|
|
0,23 €
|
|
|
0,177 €
|
|
|
0,156 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs P Ch -20Vds 8Vgs AEC-Q101 Qualified
- SQ3985EV-T1_GE3
- Vishay / Siliconix
-
1:
1,03 €
-
110 333Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ3985EV-T1_GE3
|
Vishay / Siliconix
|
MOSFETs P Ch -20Vds 8Vgs AEC-Q101 Qualified
|
|
110 333Prieinamumas
|
|
|
1,03 €
|
|
|
0,48 €
|
|
|
0,426 €
|
|
|
0,329 €
|
|
|
0,323 €
|
|
|
0,259 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
- SQ4949EY-T1_GE3
- Vishay Semiconductors
-
1:
2,15 €
-
31 278Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ4949EY-T1_GE3
|
Vishay Semiconductors
|
MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified
|
|
31 278Prieinamumas
|
|
|
2,15 €
|
|
|
1,05 €
|
|
|
0,946 €
|
|
|
0,752 €
|
|
|
0,74 €
|
|
|
0,639 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs N Ch P Ch 100/-100V AEC-Q101 Qualified
- SQJ570EP-T1_GE3
- Vishay / Siliconix
-
1:
1,60 €
-
29 970Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJ570EP-T1_GE3
|
Vishay / Siliconix
|
MOSFETs N Ch P Ch 100/-100V AEC-Q101 Qualified
|
|
29 970Prieinamumas
|
|
|
1,60 €
|
|
|
0,766 €
|
|
|
0,648 €
|
|
|
0,54 €
|
|
|
0,506 €
|
|
|
0,428 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 60V 8A 34W AEC-Q101 Qualified
- SQJ960EP-T1_GE3
- Vishay Semiconductors
-
1:
2,67 €
-
77 311Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJ960EP-T1_GE3
|
Vishay Semiconductors
|
MOSFETs 60V 8A 34W AEC-Q101 Qualified
|
|
77 311Prieinamumas
|
|
|
2,67 €
|
|
|
1,32 €
|
|
|
1,20 €
|
|
|
0,972 €
|
|
|
0,955 €
|
|
|
0,877 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Diskrečiųjų Puslaidininkių Moduliai SiC, Module, 8mohm, 1200V, 48 mm, AIN GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
- CAB008A12GM3T
- Wolfspeed
-
1:
181,60 €
-
13Prieinamumas
|
„Mouser“ Dalies Nr.
941-CAB008A12GM3T
|
Wolfspeed
|
Diskrečiųjų Puslaidininkių Moduliai SiC, Module, 8mohm, 1200V, 48 mm, AIN GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
|
|
13Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SMALL SIGNAL+P-CH
- BSL308CH6327XTSA1
- Infineon Technologies
-
1:
0,894 €
-
67 607Prieinamumas
|
„Mouser“ Dalies Nr.
726-BSL308CH6327XTSA
|
Infineon Technologies
|
MOSFETs SMALL SIGNAL+P-CH
|
|
67 607Prieinamumas
|
|
|
0,894 €
|
|
|
0,424 €
|
|
|
0,349 €
|
|
|
0,281 €
|
|
|
0,203 €
|
|
|
Peržiūrėti
|
|
|
0,258 €
|
|
|
0,197 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Dual N-Channel 80V, 15mOhms, SOT-1205-8 Standard Level MOSFET
- BUK7K15-80EX
- Nexperia
-
1:
1,99 €
-
29 827Prieinamumas
|
„Mouser“ Dalies Nr.
771-BUK7K15-80EX
|
Nexperia
|
MOSFETs Dual N-Channel 80V, 15mOhms, SOT-1205-8 Standard Level MOSFET
|
|
29 827Prieinamumas
|
|
|
1,99 €
|
|
|
0,972 €
|
|
|
0,869 €
|
|
|
0,689 €
|
|
|
0,603 €
|
|
|
Peržiūrėti
|
|
|
0,604 €
|
|
|
0,574 €
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
Skaitmeniniai Transistors PIMC31/SOT457/SC-74
- PIMC31,115
- Nexperia
-
1:
0,447 €
-
206 610Prieinamumas
|
„Mouser“ Dalies Nr.
771-PIMC31115
|
Nexperia
|
Skaitmeniniai Transistors PIMC31/SOT457/SC-74
|
|
206 610Prieinamumas
|
|
|
0,447 €
|
|
|
0,273 €
|
|
|
0,174 €
|
|
|
0,13 €
|
|
|
0,118 €
|
|
|
Peržiūrėti
|
|
|
0,101 €
|
|
|
0,089 €
|
|
|
0,077 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified
- SQ1912AEEH-T1_GE3
- Vishay / Siliconix
-
1:
0,748 €
-
130 669Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ1912AEEH-T1_GE3
|
Vishay / Siliconix
|
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified
|
|
130 669Prieinamumas
|
|
|
0,748 €
|
|
|
0,341 €
|
|
|
0,30 €
|
|
|
0,23 €
|
|
|
0,177 €
|
|
|
Peržiūrėti
|
|
|
0,155 €
|
|
|
0,152 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 20V Vds 0.8A Id AEC-Q101 Qualified
- SQ1912EH-T1_GE3
- Vishay / Siliconix
-
1:
0,671 €
-
181 008Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ1912EH-T1_GE3
|
Vishay / Siliconix
|
MOSFETs 20V Vds 0.8A Id AEC-Q101 Qualified
|
|
181 008Prieinamumas
|
|
|
0,671 €
|
|
|
0,305 €
|
|
|
0,269 €
|
|
|
0,205 €
|
|
|
0,199 €
|
|
|
0,157 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Dual Nch 20V Vds SOT-363
- SQ1922AEEH-T1_GE3
- Vishay / Siliconix
-
1:
0,671 €
-
127 420Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ1922AEEH-T1_GE3
|
Vishay / Siliconix
|
MOSFETs Dual Nch 20V Vds SOT-363
|
|
127 420Prieinamumas
|
|
|
0,671 €
|
|
|
0,305 €
|
|
|
0,268 €
|
|
|
0,205 €
|
|
|
0,157 €
|
|
|
Peržiūrėti
|
|
|
0,201 €
|
|
|
0,154 €
|
|
|
0,137 €
|
|
|
0,132 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Dual P-Channel 30V TSOP-6
- SQ3989EV-T1_GE3
- Vishay Semiconductors
-
1:
0,877 €
-
169 507Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ3989EV-T1_GE3
|
Vishay Semiconductors
|
MOSFETs Dual P-Channel 30V TSOP-6
|
|
169 507Prieinamumas
|
|
|
0,877 €
|
|
|
0,402 €
|
|
|
0,355 €
|
|
|
0,273 €
|
|
|
0,212 €
|
|
|
0,187 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Dual N-Ch 80V Vds AEC-Q101 Qualified
- SQJB90EP-T1_GE3
- Vishay Semiconductors
-
1:
1,80 €
-
26 289Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJB90EP-T1_GE3
|
Vishay Semiconductors
|
MOSFETs Dual N-Ch 80V Vds AEC-Q101 Qualified
|
|
26 289Prieinamumas
|
|
|
1,80 €
|
|
|
0,869 €
|
|
|
0,773 €
|
|
|
0,614 €
|
|
|
0,613 €
|
|
|
0,536 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Lygintuvai 200 Volt 6.0 Amp
- VS-MURD620CTTR-M3
- Vishay Semiconductors
-
1:
1,41 €
-
37 112Prieinamumas
|
„Mouser“ Dalies Nr.
844-MURD620CTTR-M3
|
Vishay Semiconductors
|
Lygintuvai 200 Volt 6.0 Amp
|
|
37 112Prieinamumas
|
|
|
1,41 €
|
|
|
0,666 €
|
|
|
0,593 €
|
|
|
0,465 €
|
|
|
0,352 €
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
- EFC3J018NUZTDG
- onsemi
-
1:
1,51 €
-
98 747Prieinamumas
|
„Mouser“ Dalies Nr.
863-EFC3J018NUZTDG
|
onsemi
|
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
|
|
98 747Prieinamumas
|
|
|
1,51 €
|
|
|
0,719 €
|
|
|
0,642 €
|
|
|
0,505 €
|
|
|
Peržiūrėti
|
|
|
0,421 €
|
|
|
0,465 €
|
|
|
0,421 €
|
|
|
0,421 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 2 500
:
5 000
|
|
|
|
|
MOSFETs NFET 30V 250MA 1.5OH
- NVTJD4001NT1G
- onsemi
-
1:
0,447 €
-
925 049Prieinamumas
|
„Mouser“ Dalies Nr.
863-NVTJD4001NT1G
|
onsemi
|
MOSFETs NFET 30V 250MA 1.5OH
|
|
925 049Prieinamumas
|
|
|
0,447 €
|
|
|
0,20 €
|
|
|
0,175 €
|
|
|
0,132 €
|
|
|
0,098 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFETs Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
- STL36DN6F7
- STMicroelectronics
-
1:
1,31 €
-
41 498Prieinamumas
|
„Mouser“ Dalies Nr.
511-STL36DN6F7
|
STMicroelectronics
|
MOSFETs Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
|
|
41 498Prieinamumas
|
|
|
1,31 €
|
|
|
0,616 €
|
|
|
0,548 €
|
|
|
0,429 €
|
|
|
0,336 €
|
|
|
Peržiūrėti
|
|
|
0,428 €
|
|
|
0,322 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
