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MOSFETs N-CHANNEL DEPLETION MODE
- DN2625DK6-G
- Microchip Technology
-
1:
2,41 €
-
20 063Prieinamumas
|
„Mouser“ Dalies Nr.
689-DN2625DK6-G
|
Microchip Technology
|
MOSFETs N-CHANNEL DEPLETION MODE
|
|
20 063Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
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SCHOTTKY Diodes ir Lygintuvai Automotive 60V, Schottky, 10A
- MBR1060DC-AU_R2_006A1
- Panjit
-
1:
1,01 €
-
6 227Prieinamumas
|
„Mouser“ Dalies Nr.
241-MBR1060DCAUR26A1
|
Panjit
|
SCHOTTKY Diodes ir Lygintuvai Automotive 60V, Schottky, 10A
|
|
6 227Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
|
|
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MOSFETs -60V Vds 20V Vgs SO-8
- SI4948BEY-T1-E3
- Vishay Semiconductors
-
1:
1,56 €
-
68 546Prieinamumas
|
„Mouser“ Dalies Nr.
781-SI4948BEY-T1-E3
|
Vishay Semiconductors
|
MOSFETs -60V Vds 20V Vgs SO-8
|
|
68 546Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
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MOSFETs T6 60V LL S08FL DS
- NVMFD5C680NLET1G
- onsemi
-
1:
1,72 €
-
1 641Prieinamumas
-
1 500Tikėtina 2026-11-17
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-NVMFD5C680NLET1G
Naujas Produktas
|
onsemi
|
MOSFETs T6 60V LL S08FL DS
|
|
1 641Prieinamumas
1 500Tikėtina 2026-11-17
|
|
Min.: 1
Daugkart.: 1
Maks.: 150
:
1 500
|
|
|
|
|
MOSFETs NFET DFN8 60V 17A 39MOHM
- NVMFD5877NLWFT1G-UM
- onsemi
-
1:
1,63 €
-
976Prieinamumas
-
1 500Tikėtina 2026-12-29
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-FD5877NLWFT1G-UM
Naujas Produktas
|
onsemi
|
MOSFETs NFET DFN8 60V 17A 39MOHM
|
|
976Prieinamumas
1 500Tikėtina 2026-12-29
|
|
Min.: 1
Daugkart.: 1
Maks.: 150
:
1 500
|
|
|
|
|
Lygintuvai THYR / DIODE MODULE DK
- DD600N16KXPSA1
- Infineon Technologies
-
1:
315,98 €
-
5Prieinamumas
-
22Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-DD600N16KXPSA1
|
Infineon Technologies
|
Lygintuvai THYR / DIODE MODULE DK
|
|
5Prieinamumas
22Pagal užsakymą
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Diskrečiųjų Puslaidininkių Moduliai SiC, Module, 11mohm, 1200V, 33.8 mm, FM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
- CAB011M12FM3T
- Wolfspeed
-
1:
107,72 €
-
29Prieinamumas
|
„Mouser“ Dalies Nr.
941-CAB011M12FM3T
|
Wolfspeed
|
Diskrečiųjų Puslaidininkių Moduliai SiC, Module, 11mohm, 1200V, 33.8 mm, FM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
|
|
29Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 100V 17A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE6 is a low on-resistance MOSFET ideal for switching applications.
- HP8KE6TB1
- ROHM Semiconductor
-
1:
2,10 €
-
4 860Prieinamumas
|
„Mouser“ Dalies Nr.
755-HP8KE6TB1
|
ROHM Semiconductor
|
MOSFETs 100V 17A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE6 is a low on-resistance MOSFET ideal for switching applications.
|
|
4 860Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE6 is a low on-resistance MOSFET ideal for switching applications.
- HT8KE6TB1
- ROHM Semiconductor
-
1:
2,00 €
-
5 917Prieinamumas
|
„Mouser“ Dalies Nr.
755-HT8KE6TB1
|
ROHM Semiconductor
|
MOSFETs 100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE6 is a low on-resistance MOSFET ideal for switching applications.
|
|
5 917Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Diskrečiųjų Puslaidininkių Moduliai SiC, Module, 8mohm, 1200V, 48 mm, AIN GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
- CAB008A12GM3T
- Wolfspeed
-
1:
181,60 €
-
13Prieinamumas
|
„Mouser“ Dalies Nr.
941-CAB008A12GM3T
|
Wolfspeed
|
Diskrečiųjų Puslaidininkių Moduliai SiC, Module, 8mohm, 1200V, 48 mm, AIN GM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
|
|
13Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 20V/-20V N/P
- FDC6420C
- onsemi
-
1:
0,92 €
-
288 855Prieinamumas
-
36 000Tikėtina 2027-01-12
|
„Mouser“ Dalies Nr.
512-FDC6420C
|
onsemi
|
MOSFETs 20V/-20V N/P
|
|
288 855Prieinamumas
36 000Tikėtina 2027-01-12
|
|
Min.: 1
Daugkart.: 1
Maks.: 3 000
:
3 000
|
|
|
|
|
MOSFETs N Ch 20Vds 8Vgs AEC-Q101 Qualified
- SQ1563AEH-T1_GE3
- Vishay Semiconductors
-
1:
0,748 €
-
308 089Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ1563AEH-T1_GE3
|
Vishay Semiconductors
|
MOSFETs N Ch 20Vds 8Vgs AEC-Q101 Qualified
|
|
308 089Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 40V 15A AEC-Q101 Qualified
- SQJ940EP-T1_GE3
- Vishay / Siliconix
-
1:
1,84 €
-
55 673Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQJ940EP-T1_GE3
|
Vishay / Siliconix
|
MOSFETs 40V 15A AEC-Q101 Qualified
|
|
55 673Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8W
- SQS966ENW-T1_GE3
- Vishay Semiconductors
-
1:
1,54 €
-
37 876Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQS966ENW-T1_GE3
|
Vishay Semiconductors
|
MOSFETs 60V Vds 20V Vgs PowerPAK 1212-8W
|
|
37 876Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
16,94 €
-
174Prieinamumas
|
„Mouser“ Dalies Nr.
511-SH63N65DM6AG
|
STMicroelectronics
|
MOSFETs Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
174Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
200
|
|
|
|
|
MOSFETs SMALL SIGNAL+P-CH
- BSL308CH6327XTSA1
- Infineon Technologies
-
1:
0,92 €
-
67 440Prieinamumas
|
„Mouser“ Dalies Nr.
726-BSL308CH6327XTSA
|
Infineon Technologies
|
MOSFETs SMALL SIGNAL+P-CH
|
|
67 440Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Dual N-Channel 80V, 15mOhms, SOT-1205-8 Standard Level MOSFET
- BUK7K15-80EX
- Nexperia
-
1:
1,99 €
-
29 780Prieinamumas
|
„Mouser“ Dalies Nr.
771-BUK7K15-80EX
|
Nexperia
|
MOSFETs Dual N-Channel 80V, 15mOhms, SOT-1205-8 Standard Level MOSFET
|
|
29 780Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 500
|
|
|
|
|
Skaitmeniniai Transistors PIMC31/SOT457/SC-74
- PIMC31,115
- Nexperia
-
1:
0,447 €
-
199 430Prieinamumas
|
„Mouser“ Dalies Nr.
771-PIMC31115
|
Nexperia
|
Skaitmeniniai Transistors PIMC31/SOT457/SC-74
|
|
199 430Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified
- SQ1912AEEH-T1_GE3
- Vishay / Siliconix
-
1:
0,748 €
-
128 649Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ1912AEEH-T1_GE3
|
Vishay / Siliconix
|
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified
|
|
128 649Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 20V Vds 0.8A Id AEC-Q101 Qualified
- SQ1912EH-T1_GE3
- Vishay / Siliconix
-
1:
0,671 €
-
180 980Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ1912EH-T1_GE3
|
Vishay / Siliconix
|
MOSFETs 20V Vds 0.8A Id AEC-Q101 Qualified
|
|
180 980Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Dual Nch 20V Vds SOT-363
- SQ1922AEEH-T1_GE3
- Vishay / Siliconix
-
1:
0,671 €
-
127 402Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ1922AEEH-T1_GE3
|
Vishay / Siliconix
|
MOSFETs Dual Nch 20V Vds SOT-363
|
|
127 402Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs Dual P-Channel 30V TSOP-6
- SQ3989EV-T1_GE3
- Vishay Semiconductors
-
1:
0,877 €
-
166 977Prieinamumas
|
„Mouser“ Dalies Nr.
78-SQ3989EV-T1_GE3
|
Vishay Semiconductors
|
MOSFETs Dual P-Channel 30V TSOP-6
|
|
166 977Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
Lygintuvai 600V 30A TO-220 HexFred
- VS-HFA30TA60C-M3
- Vishay Semiconductors
-
1:
5,65 €
-
8 167Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-HFA30TA60C-M3
|
Vishay Semiconductors
|
Lygintuvai 600V 30A TO-220 HexFred
|
|
8 167Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Lygintuvai 200 Volt 6.0 Amp
- VS-MURD620CTTR-M3
- Vishay Semiconductors
-
1:
1,41 €
-
37 072Prieinamumas
|
„Mouser“ Dalies Nr.
844-MURD620CTTR-M3
|
Vishay Semiconductors
|
Lygintuvai 200 Volt 6.0 Amp
|
|
37 072Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
- EFC3J018NUZTDG
- onsemi
-
1:
1,65 €
-
98 666Prieinamumas
|
„Mouser“ Dalies Nr.
863-EFC3J018NUZTDG
|
onsemi
|
MOSFETs PWR MOSFET FOR LITH BATT PRT DUAL N-CHAN
|
|
98 666Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
5 000
|
|
|