SiT8008 Low Power Programmable Oscillators

SiTime SiT8008 and SiT8008B low-power programmable oscillators include a programmable drive strength feature to provide a simple, flexible tool to optimize the clock rise/fall time for specific applications. The programmable drive strength improves system radiated electromagnetic interference (EMI) by slowing down the clock rise/fall time. The programmable drive strength also improves the downstream clock receiver’s (RX) jitter by decreasing (speeding up) the clock rise/fall time. The components have the ability to drive large capacitive loads while maintaining full swing with sharp edge rates. The oscillators exhibit EMI reduction by slowing rise/fall time and jitter reduction with faster rise/fall time. Power supply noise can be a source of jitter for the downstream chipset. One way to reduce this jitter is to speed up the rise/fall time of the input clock. Some chipsets may also require faster rise/fall time in order to reduce their sensitivity to this type of jitter. The components have high output load capability. The rise/fall time of the input clock varies as a function of the actual capacitive load the clock drives. At any given drive strength, the rise/fall time becomes slower as the output load increases. The devices can support up to 60pF or higher in maximum capacitive loads with drive strength settings.

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SiTime MEMS osciliatoriai 90MHz +/-50ppm -40C to85C 3.3V 245Prieinamumas
Min.: 1
Daugkart.: 1
: 250

5 mm x 3.2 mm 90 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS osciliatoriai 50MHz 3.3V -40C +85C 312Prieinamumas
Min.: 1
Daugkart.: 1
: 250

5 mm x 3.2 mm 50 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai 27.29964MHz 3.3V 20ppm -40C +85C 250Prieinamumas
Min.: 1
Daugkart.: 1
: 250

5 mm x 3.2 mm 27.29964 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS osciliatoriai 16MHz 3.3V 50ppm -40C +85C 6Prieinamumas
250Tikėtina 2026-12-16
Min.: 1
Daugkart.: 1
: 250

2.5 mm x 2 mm 16 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS 4.5 mA - 40 C + 85 C SiT8008
SiTime MEMS osciliatoriai 8.00MHz -20C +70C 3.3V 50ppm 378Prieinamumas
Min.: 1
Daugkart.: 1
: 250

7 mm x 5 mm 8 MHz 50 PPM 60 pF 2.97 V 3.63 V LVCMOS, HCMOS - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2520, 20ppm, 1.8V, 100MHz, OE, 250 pcs T&R 8 mm 155Prieinamumas
Min.: 1
Daugkart.: 1
: 250

100 MHz 20 PPM 1.62 V 1.98 V LVCMOS, HCMOS 4.1 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2520, 20ppm, 1.8V, 25MHz, OE, 1k pcs T&R 8 mm 1 047Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

25 MHz 20 PPM 1.62 V 1.98 V LVCMOS, HCMOS 4.1 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2520, 25ppm, 1.8V, 50MHz, OE, 1k pcs T&R 8 mm 450Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

50 MHz 25 PPM 1.62 V 1.98 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2520, 50ppm, 3.3V, 20MHz, OE, 250 pcs T&R 8 mm 72Prieinamumas
Min.: 1
Daugkart.: 1
: 250

20 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2520, 50ppm, 3.3V, 24MHz, OE, T&R 588Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

24 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 3225, 25ppm, 3.3V, 64MHz, OE, 250 pcs T&R 8 mm 615Prieinamumas
Min.: 1
Daugkart.: 1
: 250

64 MHz 25 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2016, 50ppm, 1.8V, 25MHz, ST, 1k pcs T&R 8 mm 1 529Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

25 MHz 50 PPM 1.62 V 1.98 V LVCMOS, HCMOS 4.1 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 7050, 25ppm, 3.3V, 91.5MHz, OE, 250 pcs T&R 12/16 mm 238Prieinamumas
Min.: 1
Daugkart.: 1
: 250

91.5 MHz 25 PPM 2.97 V 3.63 V LVCMOS, HCMOS - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2016, 25ppm, 3.3V, 33.333333MHz, OE, 250 pcs T&R 8 mm 240Prieinamumas
Min.: 1
Daugkart.: 1
: 250

33.333333 MHz 25 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B

SiTime MEMS osciliatoriai 227Prieinamumas
Min.: 1
Daugkart.: 1

15 MHz 20 PPM 1.62 V 1.98 V LVCMOS, HCMOS 3.9 mA - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai 90MHz 3.3V 50ppm -20C +70C 466Prieinamumas
Min.: 1
Daugkart.: 1
: 250

90 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.2 mA - 20 C + 70 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2520, 25ppm, 3.3V, 50MHz, OE, 250 pcs T&R 8 mm 331Prieinamumas
Min.: 1
Daugkart.: 1
: 250

50 MHz 25 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2520, 50ppm, 1.8V, 24MHz, ST, 250 pcs T&R 8 mm 68Prieinamumas
Min.: 1
Daugkart.: 1
: 250

24 MHz 50 PPM 1.62 V 1.98 V LVCMOS, HCMOS 4.1 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai 50.0MHz -40C +85C 3.3V 50ppm 402Prieinamumas
Min.: 1
Daugkart.: 1
: 250

50 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 3225, 20ppm, 3.3V, 40MHz, OE, 250 pcs T&R 8 mm 126Prieinamumas
Min.: 1
Daugkart.: 1
: 250

40 MHz 20 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai 2.097MHz 3.3V 20ppm -40C +85C 114Prieinamumas
Min.: 1
Daugkart.: 1
: 250

3.2 mm x 2.5 mm 2.097 MHz 20 PPM 15 pF 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai 20MHz 50ppm 3.3V -40C +85C 123Prieinamumas
Min.: 1
Daugkart.: 1
: 250

2 mm x 1.6 mm 20 MHz 50 PPM 15 pF 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2016, 50ppm, 3.3V, 50MHz, OE, 250 pcs T&R 8 mm 119Prieinamumas
Min.: 1
Daugkart.: 1
: 250
2 mm x 1.6 mm 50 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS 3.8 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 2520, 50ppm, 3.3V, 12.288MHz, OE, 250 pcs T&R 8 mm 70Prieinamumas
Min.: 1
Daugkart.: 1
: 250

12.288 MHz 50 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B
SiTime MEMS osciliatoriai -40 to 85C, 7050, 25ppm, 3.3V, 12.288MHz, OE, 250 pcs T&R 12/16 mm 245Prieinamumas
Min.: 1
Daugkart.: 1
: 250

12.288 MHz 25 PPM 2.97 V 3.63 V LVCMOS, HCMOS 4.5 mA - 40 C + 85 C AEC-Q100 SiT8008B