|
|
MOSFET moduliai N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP packa
- STE145N65M5
- STMicroelectronics
-
1:
28,53 €
-
760Prieinamumas
|
„Mouser“ Dalies Nr.
511-STE145N65M5
|
STMicroelectronics
|
MOSFET moduliai N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP packa
|
|
760Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
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MOSFET moduliai FREDFET MOS 7 500 V 50 mOhm SOT-227
Microchip Technology APT50M50JFLL
- APT50M50JFLL
- Microchip Technology
-
1:
55,99 €
-
27Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT50M50JFLL
|
Microchip Technology
|
MOSFET moduliai FREDFET MOS 7 500 V 50 mOhm SOT-227
|
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27Prieinamumas
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Min.: 1
Daugkart.: 1
|
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MOSFET moduliai MOSFET MOS 8 600 V 80 A SOT-227
Microchip Technology APT80M60J
- APT80M60J
- Microchip Technology
-
1:
44,93 €
-
9Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT80M60J
|
Microchip Technology
|
MOSFET moduliai MOSFET MOS 8 600 V 80 A SOT-227
|
|
9Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Kitos Kūrimo Priemonės 6-CHANNEL SAB PCB WITH ALD910027SALI
- SABMB627
- Advanced Linear Devices
-
1:
40,16 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
585-SABMB627
|
Advanced Linear Devices
|
Kitos Kūrimo Priemonės 6-CHANNEL SAB PCB WITH ALD910027SALI
|
|
4Prieinamumas
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Min.: 1
Daugkart.: 1
|
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MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, 3-level module 1200 V, 8 mOhm with NTC temperature sensor and high current PressFIT contact technology
- F3L8MXTR12C2M2H11BPSA1
- Infineon Technologies
-
1:
152,79 €
-
33Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-F3L8MXTR12C2M2H1
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, 3-level module 1200 V, 8 mOhm with NTC temperature sensor and high current PressFIT contact technology
|
|
33Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, 3-level module 1200 V, 8 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
- F3L8MXTR12C2M2QH11BPSA1
- Infineon Technologies
-
1:
159,73 €
-
13Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-F3L8MXTR12C2M2QH
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, 3-level module 1200 V, 8 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
|
|
13Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai EasyPACK 1C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 13 mOhm with NTC temperature sensor and high current PressFIT contact technology
- F413MXTR12C1M2H11BPSA1
- Infineon Technologies
-
1:
112,00 €
-
45Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-F413MXTR12C1M2H1
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai EasyPACK 1C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 13 mOhm with NTC temperature sensor and high current PressFIT contact technology
|
|
45Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai EasyPACK 1C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 13 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
- F413MXTR12C1M2QH11BPSA1
- Infineon Technologies
-
1:
119,24 €
-
30Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-F413MXTR12C1M2QH
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai EasyPACK 1C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 13 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
|
|
30Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 8 mOhm with NTC temperature sensor and high current PressFIT contact technology
- F48MXTR12C2M2H11BPSA1
- Infineon Technologies
-
1:
152,79 €
-
20Prieinamumas
-
15Tikėtina 2026-11-06
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-F48MXTR12C2M2H11
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 8 mOhm with NTC temperature sensor and high current PressFIT contact technology
|
|
20Prieinamumas
15Tikėtina 2026-11-06
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 8 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
- F48MXTR12C2M2QH11BPSA1
- Infineon Technologies
-
1:
159,73 €
-
21Prieinamumas
-
18Tikėtina 2026-11-06
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-F48MXTR12C2M2QH1
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai EasyPACK 2C CoolSiC MOSFET M2 .XT, fourpack module 1200 V, 8 mOhm with NTC temperature sensor, pre-applied thermal interface material 2.0 and high current PressFIT contact technology
|
|
21Prieinamumas
18Tikėtina 2026-11-06
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai MEDIUM POWER 62MM
- FF5MR20KM1HSHPSA1
- Infineon Technologies
-
1:
241,32 €
-
14Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF5MR20KM1HSHPSA
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai MEDIUM POWER 62MM
|
|
14Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R075M2HXTMA1
- Infineon Technologies
-
1:
6,27 €
-
788Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMBG65R075M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
788Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMLT65R075M2HXTMA1
- Infineon Technologies
-
1:
5,63 €
-
804Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMLT65R075M2HXTM
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
804Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 800
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMT65R075M2HXUMA1
- Infineon Technologies
-
1:
5,75 €
-
685Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMT65R075M2HXUMA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
685Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R075M2HXKSA1
- Infineon Technologies
-
1:
7,28 €
-
476Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW65R075M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
476Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET 1200V SIC Mosfet 20mOHm 200C Temp TO247-4 AEC-Q101
- TM3B0020120A
- Coherent
-
1:
36,65 €
-
54Prieinamumas
|
„Mouser“ Dalies Nr.
508-TM3B0020120
|
Coherent
|
SiC MOSFET 1200V SIC Mosfet 20mOHm 200C Temp TO247-4 AEC-Q101
|
|
54Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai 100V 435A Module SOT-227
- VS-FC420SA10
- Vishay Semiconductors
-
1:
24,49 €
-
1 441Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-FC420SA10
|
Vishay Semiconductors
|
MOSFET moduliai 100V 435A Module SOT-227
|
|
1 441Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET MOSFET SIC 1200 V 80 mOhm TO-247-4 Notch
- MSC080SMB120B4N
- Microchip Technology
-
1:
5,40 €
-
67Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
579-MSC080SMB120B4N
Naujas Produktas
|
Microchip Technology
|
SiC MOSFET MOSFET SIC 1200 V 80 mOhm TO-247-4 Notch
|
|
67Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai MEDIUM POWER 62MM
- FF3MR12KM1HSHPSA1
- Infineon Technologies
-
1:
207,11 €
-
6Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-FF3MR12KM1HSHPSA
Naujas Produktas
|
Infineon Technologies
|
MOSFET moduliai MEDIUM POWER 62MM
|
|
6Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai MOSFET MOS 7 500 V 38 mOhm SOT-227
- APT50M38JLL
- Microchip Technology
-
1:
67,42 €
-
300Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT50M38JLL
|
Microchip Technology
|
MOSFET moduliai MOSFET MOS 7 500 V 38 mOhm SOT-227
|
|
300Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai 200V, 3.3mOhm, 270A SOT-227 Pwr Mod
- VS-FC270SA20
- Vishay Semiconductors
-
1:
25,98 €
-
382Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-FC270SA20
|
Vishay Semiconductors
|
MOSFET moduliai 200V, 3.3mOhm, 270A SOT-227 Pwr Mod
|
|
382Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai FREDFET MOS 7 500 V 100 mOhm SOT-227
Microchip Technology APT5010JFLL
- APT5010JFLL
- Microchip Technology
-
1:
34,61 €
-
677Prieinamumas
|
„Mouser“ Dalies Nr.
494-APT5010JFLL
|
Microchip Technology
|
MOSFET moduliai FREDFET MOS 7 500 V 100 mOhm SOT-227
|
|
677Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Kitos Kūrimo Priemonės 48V disconnect switch demo board with 80V OptiMOS 5 Dual Gate MOSFETs
- DG48VSWITCHKITTOBO1
- Infineon Technologies
-
1:
335,40 €
-
3Prieinamumas
|
„Mouser“ Dalies Nr.
726-DG48VSWITCHKITTO
|
Infineon Technologies
|
Kitos Kūrimo Priemonės 48V disconnect switch demo board with 80V OptiMOS 5 Dual Gate MOSFETs
|
|
3Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai FREDFET MOS 8 1000 V 41 A SOT-227
- APT41F100J
- Microchip Technology
-
1:
52,86 €
-
102Prieinamumas
-
49Tikėtina 2026-11-30
|
„Mouser“ Dalies Nr.
494-APT41F100J
|
Microchip Technology
|
MOSFET moduliai FREDFET MOS 8 1000 V 41 A SOT-227
|
|
102Prieinamumas
49Tikėtina 2026-11-30
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Adafruit priedai P-channel Power MOSFET - TO-220 Package - 25A / 60V
- 1794
- Adafruit
-
1:
2,54 €
-
10Prieinamumas
|
„Mouser“ Dalies Nr.
485-1794
|
Adafruit
|
Adafruit priedai P-channel Power MOSFET - TO-220 Package - 25A / 60V
|
|
10Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|