|
|
SiC MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package
- IMW120R014M1HXKSA1
- Infineon Technologies
-
1:
27,45 €
-
1 273Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMW120R014M1HXKS
NRND
|
Infineon Technologies
|
SiC MOSFET CoolSiC 1200 V, 14 mohm SiC Trench MOSFET in TO247-3 package
|
|
1 273Prieinamumas
|
|
|
27,45 €
|
|
|
19,26 €
|
|
|
16,92 €
|
|
|
15,28 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET, 21mO, 1200V, TO-263-7 XL T&R, Industrial
- C3M0021120J2-TR
- Wolfspeed
-
1:
16,98 €
-
63Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0021120J2-TR
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 21mO, 1200V, TO-263-7 XL T&R, Industrial
|
|
63Prieinamumas
|
|
|
16,98 €
|
|
|
12,69 €
|
|
|
10,97 €
|
|
|
10,39 €
|
|
|
9,70 €
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET, 40mohm, 1200V, TO-263-7XL, Industrial
- C3M0040120J1
- Wolfspeed
-
1:
10,42 €
-
661Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0040120J1
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 40mohm, 1200V, TO-263-7XL, Industrial
|
|
661Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET 45mohm, 650V TO-263-7XL, Industrial
- C3M0045065J1
- Wolfspeed
-
1:
8,59 €
-
611Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0045065J1
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET 45mohm, 650V TO-263-7XL, Industrial
|
|
611Prieinamumas
|
|
|
8,59 €
|
|
|
4,88 €
|
|
|
4,87 €
|
|
|
4,84 €
|
|
|
4,52 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET, 75mO, 1200V, TO-247-4, 175C capable, Industrial
- C3M0075120K-A
- Wolfspeed
-
1:
5,74 €
-
699Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0075120K-A
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 75mO, 1200V, TO-247-4, 175C capable, Industrial
|
|
699Prieinamumas
|
|
|
5,74 €
|
|
|
3,99 €
|
|
|
3,87 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R022M1HXTMA1
- Infineon Technologies
-
1:
15,67 €
-
653Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R022M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
653Prieinamumas
|
|
|
15,67 €
|
|
|
11,12 €
|
|
|
9,68 €
|
|
|
9,32 €
|
|
|
9,16 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
GaN FET LEGACY GAN SYSTEMS
- GS-065-011-1-L-MR
- Infineon Technologies
-
1:
5,19 €
-
2 537Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
499-GS-065-011-1-L
Netinkama eksploatuoti
|
Infineon Technologies
|
GaN FET LEGACY GAN SYSTEMS
|
|
2 537Prieinamumas
|
|
|
5,19 €
|
|
|
3,13 €
|
|
|
2,12 €
|
|
|
2,12 €
|
|
|
1,97 €
|
|
|
1,81 €
|
|
Min.: 1
Daugkart.: 1
:
250
|
|
GaN FETs
|
GaN-on-Si
|
SMD/SMT
|
PDFN-6
|
N-Channel
|
|
|
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
- CDMS24740-170 SL PBFREE
- Central Semiconductor
-
1:
34,01 €
-
27Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
610-CDMS24740-170SL
Naujas Produktas
|
Central Semiconductor
|
SiC MOSFET 1700V Through-Hole MOSFET N-Channel SiC
|
|
27Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-3
|
N-Channel
|
|
|
|
GaN FET LEGACY GAN SYSTEMS
- GS-065-011-1-L-TR
- Infineon Technologies
-
1:
4,87 €
-
2 083Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
499-GS-065-011-1-LTR
Netinkama eksploatuoti
|
Infineon Technologies
|
GaN FET LEGACY GAN SYSTEMS
|
|
2 083Prieinamumas
|
|
|
4,87 €
|
|
|
3,44 €
|
|
|
2,43 €
|
|
|
2,25 €
|
|
|
1,84 €
|
|
|
Peržiūrėti
|
|
|
2,00 €
|
|
|
1,81 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
GaN FETs
|
GaN-on-Si
|
SMD/SMT
|
PDFN-6
|
N-Channel
|
|
|
|
SiC MOSFET SiC, MOSFET, 40mO, 1200V, TO-263-7XL T&R, Industrial
- C3M0040120J1-TR
- Wolfspeed
-
1:
10,43 €
-
644Prieinamumas
|
„Mouser“ Dalies Nr.
941-C3M0040120J1TR
|
Wolfspeed
|
SiC MOSFET SiC, MOSFET, 40mO, 1200V, TO-263-7XL T&R, Industrial
|
|
644Prieinamumas
|
|
|
10,43 €
|
|
|
7,26 €
|
|
|
6,24 €
|
|
|
5,83 €
|
|
|
5,83 €
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L
- IXSA65N120L2-7TR
- IXYS
-
1:
10,35 €
-
815Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSA65N120L2-7TR
Naujas Produktas
|
IXYS
|
SiC MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L
|
|
815Prieinamumas
|
|
|
10,35 €
|
|
|
7,32 €
|
|
|
6,10 €
|
|
|
5,55 €
|
|
|
5,08 €
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7L
|
N-Channel
|
|
|
|
SiC MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L
- IXSH65N120L2KHV
- IXYS
-
1:
10,57 €
-
537Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSH65N120L2KHV
Naujas Produktas
|
IXYS
|
SiC MOSFET 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L
|
|
537Prieinamumas
|
|
|
10,57 €
|
|
|
7,53 €
|
|
|
5,58 €
|
|
|
5,47 €
|
|
|
5,29 €
|
|
Min.: 1
Daugkart.: 1
:
450
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
N-Channel
|
|
|
|
SiC MOSFET 1200V 12mohm TO-247-4 G3R SiC MOSFET
- G3R12MT12K
- GeneSiC Semiconductor
-
1:
56,42 €
-
1 674Prieinamumas
|
„Mouser“ Dalies Nr.
905-G3R12MT12K
|
GeneSiC Semiconductor
|
SiC MOSFET 1200V 12mohm TO-247-4 G3R SiC MOSFET
|
|
1 674Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R107M1HXTMA1
- Infineon Technologies
-
1:
6,48 €
-
753Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R107M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
753Prieinamumas
|
|
|
6,48 €
|
|
|
3,75 €
|
|
|
3,29 €
|
|
|
3,13 €
|
|
|
2,66 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R048M1HXTMA1
- Infineon Technologies
-
1:
8,63 €
-
1 019Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R048M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
1 019Prieinamumas
|
|
|
8,63 €
|
|
|
5,53 €
|
|
|
4,52 €
|
|
|
4,39 €
|
|
|
4,28 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMBG65R072M1HXTMA1
- Infineon Technologies
-
1:
6,59 €
-
861Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IMBG65R072M1HXTM
NRND
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
861Prieinamumas
|
|
|
6,59 €
|
|
|
4,13 €
|
|
|
3,73 €
|
|
|
3,16 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
|
N-Channel
|
|
|
|
SiC MOSFET 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
- IXSA110N65L2-7TR
- IXYS
-
1:
11,27 €
-
900Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSA110N65L2-7TR
Naujas Produktas
|
IXYS
|
SiC MOSFET 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
|
|
900Prieinamumas
|
|
|
11,27 €
|
|
|
7,84 €
|
|
|
6,24 €
|
|
|
5,83 €
|
|
Min.: 1
Daugkart.: 1
:
800
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7L
|
N-Channel
|
|
|
|
SiC MOSFET 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL
- IXSG110N65L2K
- IXYS
-
1:
11,27 €
-
2 090Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSG110N65L2K
Naujas Produktas
|
IXYS
|
SiC MOSFET 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL
|
|
2 090Prieinamumas
|
|
|
11,27 €
|
|
|
7,84 €
|
|
|
6,24 €
|
|
|
5,83 €
|
|
|
5,83 €
|
|
Min.: 1
Daugkart.: 1
:
2 000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TOLL-8
|
N-Channel
|
|
|
|
SiC MOSFET 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L
- IXSH100N65L2KHV
- IXYS
-
1:
11,47 €
-
550Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXSH100N65L2KHV
Naujas Produktas
|
IXYS
|
SiC MOSFET 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L
|
|
550Prieinamumas
|
|
|
11,47 €
|
|
|
8,00 €
|
|
|
6,05 €
|
|
Min.: 1
Daugkart.: 1
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4L
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
- IMZC120R022M2HXKSA1
- Infineon Technologies
-
1:
17,67 €
-
1 558Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMZC120R022M2HXK
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200V, 22 mohm G2
|
|
1 558Prieinamumas
|
|
|
17,67 €
|
|
|
12,13 €
|
|
|
10,11 €
|
|
|
9,00 €
|
|
|
8,53 €
|
|
Min.: 1
Daugkart.: 1
Maks.: 50
|
|
SiC MOSFETS
|
SiC
|
Through Hole
|
TO-247-4
|
N-Channel
|
|
|
|
SiC MOSFET TO263 1.2KV 75A N-CH SIC
- SCT4018KWATL
- ROHM Semiconductor
-
1:
23,99 €
-
994Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
755-SCT4018KWATL
Naujas Produktas
|
ROHM Semiconductor
|
SiC MOSFET TO263 1.2KV 75A N-CH SIC
|
|
994Prieinamumas
|
|
|
23,99 €
|
|
|
17,46 €
|
|
|
16,67 €
|
|
|
16,66 €
|
|
|
15,78 €
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
TO-263-7LA
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R026M2HXTMA1
- Infineon Technologies
-
1:
13,36 €
-
1 804Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R026M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
1 804Prieinamumas
|
|
|
13,36 €
|
|
|
9,43 €
|
|
|
7,63 €
|
|
|
7,09 €
|
|
|
6,71 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R034M2HXTMA1
- Infineon Technologies
-
1:
10,26 €
-
720Prieinamumas
-
750Tikėtina 2026-07-31
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R034M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
720Prieinamumas
750Tikėtina 2026-07-31
|
|
|
10,26 €
|
|
|
7,00 €
|
|
|
5,99 €
|
|
|
5,41 €
|
|
|
5,19 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R053M2HXTMA1
- Infineon Technologies
-
1:
8,68 €
-
335Prieinamumas
-
750Tikėtina 2026-10-08
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R053M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
335Prieinamumas
750Tikėtina 2026-10-08
|
|
|
8,68 €
|
|
|
5,68 €
|
|
|
4,56 €
|
|
|
3,94 €
|
|
|
3,85 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
|
|
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
- IMCQ120R078M2HXTMA1
- Infineon Technologies
-
1:
7,87 €
-
856Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMCQ120R078M2HXT
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET discrete 1200 V G2 in top-side cooled Q-DPAK package
|
|
856Prieinamumas
|
|
|
7,87 €
|
|
|
5,17 €
|
|
|
4,09 €
|
|
|
3,66 €
|
|
|
3,28 €
|
|
Min.: 1
Daugkart.: 1
:
750
|
|
SiC MOSFETS
|
SiC
|
SMD/SMT
|
PG-HDSOP-22-U03
|
N-Channel
|
|
Lietuva
