|
|
MOSFETs SILICON CARBIDE MOSFET
- IMW40R015M2HXKSA1
- Infineon Technologies
-
1:
13,24 €
-
189Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW40R015M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
MOSFETs SILICON CARBIDE MOSFET
|
|
189Prieinamumas
|
|
|
13,24 €
|
|
|
8,08 €
|
|
|
7,28 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 200V 2.65mohm 500A Ultra Junction X4-Class Power MOSFET in PLUS264
- IXTB500N20X4
- IXYS
-
1:
36,28 €
-
600Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXTB500N20X4
Naujas Produktas
|
IXYS
|
MOSFETs 200V 2.65mohm 500A Ultra Junction X4-Class Power MOSFET in PLUS264
|
|
600Prieinamumas
|
|
|
36,28 €
|
|
|
28,07 €
|
|
|
25,44 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 200V 3.3mohm 400A Ultra Junction X4-Class Power MOSFET in PLUS247
- IXTX400N20X4
- IXYS
-
1:
25,69 €
-
315Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXTX400N20X4
Naujas Produktas
|
IXYS
|
MOSFETs 200V 3.3mohm 400A Ultra Junction X4-Class Power MOSFET in PLUS247
|
|
315Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai SIC DIODES
- IDW32G65C5BXKSA2
- Infineon Technologies
-
1:
11,68 €
-
132Prieinamumas
|
„Mouser“ Dalies Nr.
726-IDW32G65C5BXKSA2
|
Infineon Technologies
|
SiC SCHOTTKY diodai SIC DIODES
|
|
132Prieinamumas
|
|
|
11,68 €
|
|
|
6,68 €
|
|
|
5,92 €
|
|
|
5,62 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT FS3TIGBT TO247 100A 650V
- FGY100T65SCDT
- onsemi
-
1:
12,18 €
-
150Prieinamumas
|
„Mouser“ Dalies Nr.
863-FGY100T65SCDT
|
onsemi
|
IGBT FS3TIGBT TO247 100A 650V
|
|
150Prieinamumas
|
|
|
12,18 €
|
|
|
7,43 €
|
|
|
7,36 €
|
|
|
6,47 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SCHOTTKY Diodes ir Lygintuvai 20A, 200V, Schottky Rectifier
- MBR20200PT
- Taiwan Semiconductor
-
1:
2,62 €
-
742Prieinamumas
|
„Mouser“ Dalies Nr.
821-MBR20200PT
|
Taiwan Semiconductor
|
SCHOTTKY Diodes ir Lygintuvai 20A, 200V, Schottky Rectifier
|
|
742Prieinamumas
|
|
|
2,62 €
|
|
|
1,69 €
|
|
|
1,16 €
|
|
|
0,937 €
|
|
|
Peržiūrėti
|
|
|
0,869 €
|
|
|
0,846 €
|
|
|
0,819 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Lygintuvai 80ns, 30A, 600V, High Efficient Recovery Rectifier
- HER3006PT
- Taiwan Semiconductor
-
1:
3,07 €
-
813Prieinamumas
|
„Mouser“ Dalies Nr.
821-HER3006PT
|
Taiwan Semiconductor
|
Lygintuvai 80ns, 30A, 600V, High Efficient Recovery Rectifier
|
|
813Prieinamumas
|
|
|
3,07 €
|
|
|
2,00 €
|
|
|
1,40 €
|
|
|
1,10 €
|
|
|
Peržiūrėti
|
|
|
1,07 €
|
|
|
1,01 €
|
|
|
0,923 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 650V 50A IGBT Stop Trench
- RGTH00TS65DGC11
- ROHM Semiconductor
-
1:
6,04 €
-
356Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-RGTH00TS65DGC11
NRND
|
ROHM Semiconductor
|
IGBT 650V 50A IGBT Stop Trench
|
|
356Prieinamumas
|
|
|
6,04 €
|
|
|
4,04 €
|
|
|
3,00 €
|
|
|
Peržiūrėti
|
|
|
2,74 €
|
|
|
2,55 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT 650V 50A IGBT Stop Trench
- RGTH00TS65GC11
- ROHM Semiconductor
-
1:
5,49 €
-
432Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
755-RGTH00TS65GC11
NRND
|
ROHM Semiconductor
|
IGBT 650V 50A IGBT Stop Trench
|
|
432Prieinamumas
|
|
|
5,49 €
|
|
|
3,59 €
|
|
|
2,45 €
|
|
|
Peržiūrėti
|
|
|
2,24 €
|
|
|
2,07 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads
- STWA60N035M9
- STMicroelectronics
-
1:
7,96 €
-
266Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
511-STWA60N035M9
Naujas Produktas
|
STMicroelectronics
|
MOSFETs N-channel 600 V 32 mOhm typ. 62 A MDmesh M9 Power MOSFET in a TO-247 long leads
|
|
266Prieinamumas
|
|
|
7,96 €
|
|
|
5,61 €
|
|
|
4,53 €
|
|
|
4,02 €
|
|
|
3,56 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SILICON CARBIDE MOSFET
- IMW40R025M2HXKSA1
- Infineon Technologies
-
1:
10,11 €
-
25Prieinamumas
-
720Tikėtina 2027-05-27
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW40R025M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
MOSFETs SILICON CARBIDE MOSFET
|
|
25Prieinamumas
720Tikėtina 2027-05-27
|
|
|
10,11 €
|
|
|
6,75 €
|
|
|
5,54 €
|
|
|
5,16 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SILICON CARBIDE MOSFET
- IMW40R036M2HXKSA1
- Infineon Technologies
-
1:
8,21 €
-
227Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW40R036M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
MOSFETs SILICON CARBIDE MOSFET
|
|
227Prieinamumas
|
|
|
8,21 €
|
|
|
4,82 €
|
|
|
4,07 €
|
|
|
3,90 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs SILICON CARBIDE MOSFET
- IMW40R045M2HXKSA1
- Infineon Technologies
-
1:
7,15 €
-
203Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW40R045M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
MOSFETs SILICON CARBIDE MOSFET
|
|
203Prieinamumas
|
|
|
7,15 €
|
|
|
4,15 €
|
|
|
3,48 €
|
|
|
3,24 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET SILICON CARBIDE MOSFET
- IMW65R075M2HXKSA1
- Infineon Technologies
-
1:
7,23 €
-
246Prieinamumas
-
240Tikėtina 2026-08-20
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW65R075M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET SILICON CARBIDE MOSFET
|
|
246Prieinamumas
240Tikėtina 2026-08-20
|
|
|
7,23 €
|
|
|
4,27 €
|
|
|
3,59 €
|
|
|
3,09 €
|
|
|
3,06 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Mažų signalų perjungimo diodai Power Diode Discretes-FRED 1200V, 2 x 50A TO-247AD
- DPF100C1200HB
- IXYS
-
1:
15,70 €
-
3 000Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-DPF100C1200HB
Naujas Produktas
|
IXYS
|
Mažų signalų perjungimo diodai Power Diode Discretes-FRED 1200V, 2 x 50A TO-247AD
|
|
3 000Prieinamumas
|
|
|
15,70 €
|
|
|
9,73 €
|
|
|
9,08 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Lygintuvai Power Diode Discretes-FRED TO-247AD
- DPF120C600HB
- IXYS
-
1:
16,02 €
-
2 990Prieinamumas
|
„Mouser“ Dalies Nr.
747-DPF120C600HB
|
IXYS
|
Lygintuvai Power Diode Discretes-FRED TO-247AD
|
|
2 990Prieinamumas
|
|
|
16,02 €
|
|
|
11,13 €
|
|
|
9,61 €
|
|
|
8,88 €
|
|
|
8,59 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs POWER MOSFET N-CH 500V 13A
- STW19NM50N
- STMicroelectronics
-
1:
6,59 €
-
425Prieinamumas
|
„Mouser“ Dalies Nr.
511-STW19NM50N
|
STMicroelectronics
|
MOSFETs POWER MOSFET N-CH 500V 13A
|
|
425Prieinamumas
|
|
|
6,59 €
|
|
|
3,69 €
|
|
|
2,73 €
|
|
|
2,64 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET 650V, 30mohm GaN FET in TO247-3L
- TP65H030G4PWS
- Renesas Electronics
-
1:
9,43 €
-
1 195Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
227-TP65H030G4PWS
Naujas Produktas
|
Renesas Electronics
|
GaN FET 650V, 30mohm GaN FET in TO247-3L
|
|
1 195Prieinamumas
|
|
|
9,43 €
|
|
|
5,32 €
|
|
|
4,93 €
|
|
|
4,28 €
|
|
|
4,20 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
- IMW65R010M2HXKSA1
- Infineon Technologies
-
1:
22,16 €
-
259Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW65R010M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 650 V, 10 mohm G2
|
|
259Prieinamumas
|
|
|
22,16 €
|
|
|
14,16 €
|
|
|
14,07 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
- IMW65R026M2HXKSA1
- Infineon Technologies
-
1:
12,81 €
-
538Prieinamumas
-
240Tikėtina 2027-05-27
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW65R026M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 650 V, 26 mohm G2
|
|
538Prieinamumas
240Tikėtina 2027-05-27
|
|
|
12,81 €
|
|
|
7,80 €
|
|
|
6,97 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
- IMW65R033M2HXKSA1
- Infineon Technologies
-
1:
11,11 €
-
213Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW65R033M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 650 V, 33 mohm G2
|
|
213Prieinamumas
|
|
|
11,11 €
|
|
|
6,68 €
|
|
|
5,79 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
- IMW65R060M2HXKSA1
- Infineon Technologies
-
1:
7,76 €
-
992Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
726-IMW65R060M2HXKSA
Naujas Produktas
|
Infineon Technologies
|
SiC MOSFET CoolSiC MOSFET 650 V, 60 mohm G2
|
|
992Prieinamumas
|
|
|
7,76 €
|
|
|
4,53 €
|
|
|
3,82 €
|
|
|
3,81 €
|
|
|
3,61 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 650V 100mohm 34A X2-Class HiPerFET in TO-247
- IXFH34N65X2W
- IXYS
-
1:
8,85 €
-
584Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXFH34N65X2W
Naujas Produktas
|
IXYS
|
MOSFETs 650V 100mohm 34A X2-Class HiPerFET in TO-247
|
|
584Prieinamumas
|
|
|
8,85 €
|
|
|
5,25 €
|
|
|
4,44 €
|
|
|
4,39 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs 650V 69mohm 46A X2-Class HiPerFET in TO-247
- IXFH46N65X2W
- IXYS
-
1:
10,67 €
-
551Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
747-IXFH46N65X2W
Naujas Produktas
|
IXYS
|
MOSFETs 650V 69mohm 46A X2-Class HiPerFET in TO-247
|
|
551Prieinamumas
|
|
|
10,67 €
|
|
|
6,40 €
|
|
|
5,57 €
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
IGBT FS7 1200V 40A SCR IGBT TO247 4L COPACK
- FGH4L40T120RWD
- onsemi
-
1:
6,39 €
-
431Prieinamumas
-
Naujas Produktas
|
„Mouser“ Dalies Nr.
863-FGH4L40T120RWD
Naujas Produktas
|
onsemi
|
IGBT FS7 1200V 40A SCR IGBT TO247 4L COPACK
|
|
431Prieinamumas
|
|
Min.: 1
Daugkart.: 1
Maks.: 45
|
|
|
Lietuva
