Rezultatai: 49
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Montavimo stilius Pakuotė / Korpusas Tranzistoriaus poliškumas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Kvalifikacija Prekinis pavadinimas Pakavimas
Infineon Technologies MOSFETs IFX FET 40V 1 099Prieinamumas
Min.: 1
Daugkart.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 40 V 302 A 900 uOhms 20 V 2.1 V 210 nC - 55 C + 175 C 375 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET 40V 3 422Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 40 V 201 A 1.15 mOhms 20 V 3.4 V 210 nC - 55 C + 175 C 375 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET >80 - 100V 1 841Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole N-Channel 1 Channel 100 V 77 A 8.2 mOhms 20 V 3.8 V 28 nC - 55 C + 175 C 100 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET 15V-30V 6 322Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000
Si SMD/SMT TDSON-FL-8 N-Channel 1 Channel 30 V 100 A 1.9 mOhms 20 V 1.2 V 22 nC - 55 C + 150 C 69 W Enhancement OptiMOS ~ StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs 30V 1 N-CH HEXFET 3.1mOhms 41nC 3 930Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

Si SMD/SMT PQFN-8 N-Channel 1 Channel 30 V 120 A 4.6 mOhms 20 V 1.8 V 41 nC - 55 C + 150 C 3.6 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs 30V SINGLE N-CH 4.1mOhms 14nC 3 241Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

Si SMD/SMT PQFN-8 N-Channel 1 Channel 30 V 90 A 6.3 mOhms 20 V 1.8 V 31 nC - 55 C + 150 C 54 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET 15V-30V 4 237Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000
Si SMD/SMT TSDSON-FL-8 N-Channel 1 Channel 30 V 40 A 8.6 mOhms 20 V 1.2 V 5.2 nC - 55 C + 150 C Enhancement OptiMOS ~ StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs Addresses a broad range of applications from low- to high-switching frequency 8 951Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT TO-252-3 N-Channel 1 Channel 30 V 143 A 2.05 mOhms 20 V 2.35 V 33 nC - 55 C + 175 C 136 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs Addresses a broad range of applications from low- to high-switching frequency 4 955Prieinamumas
Min.: 1
Daugkart.: 1
: 5 000

Si SMD/SMT TSDSON-8 N-Channel 1 Channel 30 V 128 A 2.8 mOhms 20 V 2.35 V 27 nC - 55 C + 175 C 83 W Enhancement StrongIRFET Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET >80 - 100V 4 004Prieinamumas
Min.: 1
Daugkart.: 1
: 1 800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 100 V 315 A 1.5 mOhms 20 V 2.2 V 161 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET > 60-80V 2 990Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 80 V 129 A 4 mOhms 20 V 2.2 V 54 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs IFX FET > 60-80V 1 648Prieinamumas
Min.: 1
Daugkart.: 1
: 1 800

Si SMD/SMT HSOF-8 N-Channel 1 Channel 80 V 351 A 1.23 mOhms 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs SMALL SIGNAL MOSFETS 2 131Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 6.4 A 67 mOhms 20 V 4 V 48 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape

Infineon Technologies MOSFETs N-Ch 60V 300mA SOT-23-3 528 576Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 60 V 300 mA 1.6 Ohms 20 V 1.5 V 600 pC - 55 C + 150 C 500 mW Enhancement AEC-Q100 Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET 60V 774Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 60 V 139 A 2.85 mOhms 20 V 2.1 V 68 nC - 55 C + 175 C 150 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs SMALL SIGNAL MOSFETS 1 544Prieinamumas
2 000Tikėtina 2027-06-10
Min.: 1
Daugkart.: 1
: 1 000

Si SMD/SMT SOT-223-4 P-Channel 1 Channel 60 V 3.9 A 67 mOhms 20 V 4 V 48 nC - 55 C + 150 C 5 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs 20V DUAL N-CH LOGIC LEVEL HEXFET 7 855Prieinamumas
Min.: 1
Daugkart.: 1
: 4 000

Si SMD/SMT PQFN 2x2 (DFN2020) N-Channel 2 Channel 20 V 4.5 A 45 mOhms 12 V 1.8 V 3.1 nC - 55 C + 150 C 1.5 W Enhancement StrongIRFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET >80 - 100V 1 417Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 110 A 5 mOhms 20 V 3.8 V 51 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFETs 30V 8.3A 17.5mOhm 2.5V drive capable 18 179Prieinamumas
21 000Tikėtina 2026-10-06
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT TSOP-6 N-Channel 1 Channel 30 V 8.3 A 17.5 mOhms 12 V 1.8 V 11 nC - 55 C + 150 C 2 W Enhancement HEXFET Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET >80 - 100V 1 215Prieinamumas
Min.: 1
Daugkart.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 100 V 117 A 5.05 mOhms 20 V 2.2 V 51 nC - 55 C + 175 C 150 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET > 60-80V 4 246Prieinamumas
Min.: 1
Daugkart.: 1
: 800

Si SMD/SMT TO-263-7 N-Channel 1 Channel 80 V 282 A 1.4 mOhms 20 V 2.2 V 170 nC - 55 C + 175 C 300 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs IFX FET >80 - 100V 1 358Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 100 V 184 A 2.6 mOhms 20 V 3.8 V 103 nC - 55 C + 175 C 250 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET > 60-80V 6 337Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole N-Channel 1 Channel 80 V 115 A 4 mOhms 20 V 3.8 V 54 nC - 55 C + 175 C 150 W Enhancement Tube
Infineon Technologies MOSFETs IFX FET > 60-80V 3 987Prieinamumas
Min.: 1
Daugkart.: 1
Si Through Hole N-Channel 1 Channel 80 V 99 A 5.5 mOhms 20 V 3.8 V 36 nC - 55 C + 175 C 107 W Enhancement Tube

Infineon Technologies MOSFETs MOSFT 25V 5.8A 24mOhm 5.4 Qg 58 550Prieinamumas
45 000Tikėtina 2027-04-29
Min.: 1
Daugkart.: 1
: 3 000

Si SMD/SMT SOT-23-3 N-Channel 1 Channel 25 V 5.8 A 41 mOhms 20 V 1.7 V 5.4 nC - 55 C + 175 C 1.25 W Enhancement HEXFET Reel, Cut Tape, MouseReel