|
|
MOSFETs N-Ch 850V 54.9A TO247-3
- SPW55N80C3FKSA1
- Infineon Technologies
-
1:
14,14 €
-
254Prieinamumas
|
„Mouser“ Dalies Nr.
726-SPW55N80C3FKSA1
|
Infineon Technologies
|
MOSFETs N-Ch 850V 54.9A TO247-3
|
|
254Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
54.9 A
|
77 mOhms
|
20 V
|
2.1 V
|
288 nC
|
- 55 C
|
+ 150 C
|
500 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs LOW POWER_LEGACY
- SPD06N80C3ATMA1
- Infineon Technologies
-
1:
2,19 €
-
3 434Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPD06N80C3ATMA1
NRND
|
Infineon Technologies
|
MOSFETs LOW POWER_LEGACY
|
|
3 434Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
900 mOhms
|
20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 800V 8A TO220-3 CoolMOS C3
- SPP08N80C3XKSA1
- Infineon Technologies
-
1:
2,75 €
-
823Prieinamumas
|
„Mouser“ Dalies Nr.
726-SPP08N80C3XKSA1
|
Infineon Technologies
|
MOSFETs N-Ch 800V 8A TO220-3 CoolMOS C3
|
|
823Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
560 mOhms
|
20 V
|
2.1 V
|
60 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
- SPB17N80C3
- Infineon Technologies
-
1:
4,76 €
-
2 918Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPB17N80C3
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
|
|
2 918Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
290 mOhms
|
20 V
|
2.1 V
|
88 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
- SPB17N80C3ATMA1
- Infineon Technologies
-
1:
4,37 €
-
1 451Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPB17N80C3ATMA1
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
|
|
1 451Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
250 mOhms
|
20 V
|
2.1 V
|
117 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 800V 8A TO220FP-3 CoolMOS C3
- SPA08N80C3
- Infineon Technologies
-
1:
3,02 €
-
541Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPA08N80C3
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 8A TO220FP-3 CoolMOS C3
|
|
541Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
560 mOhms
|
20 V
|
2.1 V
|
45 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 8A TO220FP-3 CoolMOS C3
- SPA08N80C3XKSA1
- Infineon Technologies
-
1:
3,10 €
-
483Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPA08N80C3XKSA1
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 8A TO220FP-3 CoolMOS C3
|
|
483Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
560 mOhms
|
20 V
|
2.1 V
|
60 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs LOW POWER_LEGACY
- SPD04N80C3ATMA1
- Infineon Technologies
-
1:
2,02 €
-
1 005Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPD04N80C3ATMA1
NRND
|
Infineon Technologies
|
MOSFETs LOW POWER_LEGACY
|
|
1 005Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.1 Ohms
|
20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 800V 6A TO220-3 CoolMOS C3
- SPP06N80C3
- Infineon Technologies
-
1:
2,22 €
-
358Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPP06N80C3
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 6A TO220-3 CoolMOS C3
|
|
358Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
900 mOhms
|
20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 4A TO220-3 CoolMOS C3
- SPP04N80C3XKSA1
- Infineon Technologies
-
1:
2,05 €
-
500Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-SPP04N80C3XKSA1
Netinkama eksploatuoti
|
Infineon Technologies
|
MOSFETs N-Ch 800V 4A TO220-3 CoolMOS C3
|
|
500Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.1 Ohms
|
20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3
- SPW17N80C3
- Infineon Technologies
-
1:
5,62 €
-
164Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPW17N80C3
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3
|
|
164Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
290 mOhms
|
20 V
|
2.1 V
|
88 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 6A TO220-3 CoolMOS C3
- SPP06N80C3XKSA1
- Infineon Technologies
-
1:
2,36 €
-
85Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPP06N80C3XKSA1
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 6A TO220-3 CoolMOS C3
|
|
85Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
780 mOhms
|
20 V
|
2.1 V
|
41 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 11A TO247-3 CoolMOS C3
- SPW11N80C3
- Infineon Technologies
-
1:
3,84 €
-
173Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPW11N80C3
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 11A TO247-3 CoolMOS C3
|
|
173Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
390 mOhms
|
20 V
|
2.1 V
|
85 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 11A TO247-3 CoolMOS C3
- SPW11N80C3FKSA1
- Infineon Technologies
-
1:
3,74 €
-
180Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPW11N80C3FKSA1
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 11A TO247-3 CoolMOS C3
|
|
180Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
390 mOhms
|
20 V
|
2.1 V
|
85 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 8A TO220-3 CoolMOS C3
- SPP08N80C3
- Infineon Technologies
-
1:
2,76 €
-
104Prieinamumas
|
„Mouser“ Dalies Nr.
726-SPP08N80C3
|
Infineon Technologies
|
MOSFETs N-Ch 800V 8A TO220-3 CoolMOS C3
|
|
104Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
8 A
|
650 mOhms
|
20 V
|
2.1 V
|
45 nC
|
- 55 C
|
+ 150 C
|
104 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 4A TO220-3 CoolMOS C3
- SPP04N80C3
- Infineon Technologies
-
1:
2,17 €
-
560Prieinamumas
-
Netinkama eksploatuoti
|
„Mouser“ Dalies Nr.
726-SPP04N80C3
Netinkama eksploatuoti
|
Infineon Technologies
|
MOSFETs N-Ch 800V 4A TO220-3 CoolMOS C3
|
|
560Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.1 Ohms
|
20 V
|
2.1 V
|
31 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3
- SPA11N80C3
- Infineon Technologies
-
1:
3,18 €
-
698Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPA11N80C3
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3
|
|
698Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
450 mOhms
|
20 V
|
2.1 V
|
64 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs LOW POWER_LEGACY
- SPD02N80C3ATMA1
- Infineon Technologies
-
1:
1,64 €
-
80Prieinamumas
-
67 500Pagal užsakymą
-
NRND
|
„Mouser“ Dalies Nr.
726-SPD02N80C3ATMA1
NRND
|
Infineon Technologies
|
MOSFETs LOW POWER_LEGACY
|
|
80Prieinamumas
67 500Pagal užsakymą
Turime sandėlyje:
80 Galime išsiųsti iš karto
Pagal užsakymą:
32 500 Tikėtina 2027-05-06
35 000 Tikėtina 2027-08-19
Gamintojo numatytas pristatymo laikas
24 Savaičių
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
2 A
|
2.7 Ohms
|
20 V
|
2.1 V
|
12 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 800V 11A TO220-3 CoolMOS C3
- SPP11N80C3XKSA1
- Infineon Technologies
-
1:
3,59 €
-
4Prieinamumas
-
2 500Tikėtina 2027-03-25
-
NRND
|
„Mouser“ Dalies Nr.
726-SPP11N80C3XKSA1
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 11A TO220-3 CoolMOS C3
|
|
4Prieinamumas
2 500Tikėtina 2027-03-25
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
390 mOhms
|
20 V
|
2.1 V
|
85 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
- SPP17N80C3XKSA1
- Infineon Technologies
-
1:
5,05 €
-
18Prieinamumas
-
500Tikėtina 2027-02-25
-
NRND
|
„Mouser“ Dalies Nr.
726-SPP17N80C3XKSA1
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
|
|
18Prieinamumas
500Tikėtina 2027-02-25
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
290 mOhms
|
20 V
|
2.1 V
|
88 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3
- SPW17N80C3FKSA1
- Infineon Technologies
-
1:
5,72 €
-
281Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-SPW17N80C3FKSA1
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3
|
|
281Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
250 mOhms
|
20 V
|
2.1 V
|
117 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 11A TO220-3 CoolMOS C3
- SPP11N80C3
- Infineon Technologies
-
1:
3,52 €
-
1 000Pagal užsakymą
-
NRND
|
„Mouser“ Dalies Nr.
726-SPP11N80C3
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 11A TO220-3 CoolMOS C3
|
|
1 000Pagal užsakymą
Pagal užsakymą:
500 Tikėtina 2027-03-04
500 Tikėtina 2027-06-03
Gamintojo numatytas pristatymo laikas
40 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
450 mOhms
|
20 V
|
2.1 V
|
64 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
- SPP17N80C3
- Infineon Technologies
-
1:
5,04 €
-
500Tikėtina 2027-02-25
-
NRND
|
„Mouser“ Dalies Nr.
726-SPP17N80C3
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
|
|
500Tikėtina 2027-02-25
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
290 mOhms
|
20 V
|
2.1 V
|
88 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3
- SPA11N80C3XKSA1
- Infineon Technologies
-
1:
3,10 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 15 Savaičių
-
NRND
|
„Mouser“ Dalies Nr.
726-SPA11N80C3XKSA1
NRND
|
Infineon Technologies
|
MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 15 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
11 A
|
390 mOhms
|
20 V
|
2.1 V
|
85 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|