Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Rezultatai: 340
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS
Infineon Technologies SCHOTTKY Diodes ir Lygintuvai CoolSiC Schottky diode 2000 V, 50 A G5 in a TO-247PLUS-4 HCC package 165Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies Gate Tvarkyklės ISOLATED DRIVER 14 217Prieinamumas
8 000Tikėtina 2026-09-30
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies Gate Tvarkyklės ISOLATED DRIVER 20 586Prieinamumas
12 500Tikėtina 2026-10-15
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 9.4A, SEP Output 62 551Prieinamumas
47 500Tikėtina 2026-08-31
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies SiC SCHOTTKY diodai SIC DISCRETE 4 490Prieinamumas
6 000Pagal užsakymą
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC SCHOTTKY diodai SIC CHIP/DISCRETE 29 467Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies SiC SCHOTTKY diodai SIC CHIP/DISCRETE 4 945Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs HIGH POWER_NEW 12 383Prieinamumas
25 000Pagal užsakymą
Min.: 1
Daugkart.: 1


Infineon Technologies MOSFETs HIGH POWER_NEW 6 658Prieinamumas
6 240Tikėtina 2026-08-24
Min.: 1
Daugkart.: 1


Infineon Technologies MOSFETs HIGH POWER_NEW 23 007Prieinamumas
23 760Tikėtina 2027-04-08
Min.: 1
Daugkart.: 1

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 1 181Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 434Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies SiC MOSFET SILICON CARBIDE MOSFET 1 469Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs HIGH POWER_NEW 1 959Prieinamumas
4 000Tikėtina 2026-10-07
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs HIGH POWER_NEW 7 593Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs LOW POWER_NEW 5 548Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs AUTOMOTIVE_COOLMOS 1 164Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs LOW POWER_NEW 4 902Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs HIGH POWER_NEW 642Prieinamumas
Min.: 1
Daugkart.: 1


Infineon Technologies MOSFETs HIGH POWER_NEW 215Prieinamumas
Min.: 1
Daugkart.: 1


Infineon Technologies MOSFETs HIGH POWER_NEW 73Prieinamumas
960Tikėtina 2026-08-27
Min.: 1
Daugkart.: 1


Infineon Technologies MOSFETs HIGH POWER_NEW 428Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies 2ED300C17-S ROHS
Infineon Technologies Gate Tvarkyklės HALFBRIDGE DRV 30A DC/DC 1700V 150Prieinamumas
60Tikėtina 2026-10-15
Min.: 1
Daugkart.: 1

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 272Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V 3-Phase,0.375A BSD, OCP, EN & FAULT 365Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000