Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Rezultatai: 340
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS
Infineon Technologies Gate Tvarkyklės 30A 2-OUT Half Brdg Non-Inv 113Prieinamumas
Min.: 1
Daugkart.: 1


Infineon Technologies Gate Tvarkyklės 600V half-brdg,2.8A BSD, OCP, EN & FAULT 2 029Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs CONSUMER 68 653Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies MOSFETs LOW POWER_NEW 4 868Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės DRIVER-IC 3 491Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000


Infineon Technologies Gate Tvarkyklės DRIVER-IC 3 679Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies SiC SCHOTTKY diodai SIC DIODES 6 347Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies 2ED300C17-S ROHS
Infineon Technologies Gate Tvarkyklės HALFBRIDGE DRV 30A DC/DC 1700V 150Prieinamumas
60Tikėtina 2026-10-15
Min.: 1
Daugkart.: 1

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 6A, UL, Miller clam 2 234Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 6.8A, UL, SEP Outpu 2 768Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 1 853Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies Gate Tvarkyklės 600V 3-Phase,0.375A BSD, OCP, EN & FAULT 1 575Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs HIGH POWER_NEW 3 453Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies MOSFETs HIGH POWER_NEW 1 578Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies MOSFETs HIGH POWER_NEW 5 234Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs LOW POWER_NEW 8 670Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Infineon Technologies MOSFETs HIGH POWER_NEW 3 361Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000


Infineon Technologies MOSFETs HIGH POWER_NEW 3 510Prieinamumas
Min.: 1
Daugkart.: 1


Infineon Technologies Gate Tvarkyklės 1200V Isolated 1-CH, 3.5A,Separate Outpu 2 735Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Infineon Technologies MOSFETs AUTOMOTIVE_COOLMOS 1 114Prieinamumas
Min.: 1
Daugkart.: 1

Infineon Technologies Gate Tvarkyklės 600V half-bridge 0.7A,integrated BSD 2 278Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Infineon Technologies Gate Tvarkyklės 600V 3-Phase,0.375A BSD, OCP, EN & FAULT 1 047Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000


Infineon Technologies Gate Tvarkyklės 600V 3-Phase,0.375A BSD, OCP, EN & FAULT 1 369Prieinamumas
Min.: 1
Daugkart.: 1
: 1 000

Infineon Technologies MOSFETs HIGH POWER_NEW 2 895Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Infineon Technologies MOSFETs HIGH POWER_NEW 969Prieinamumas
Min.: 1
Daugkart.: 1
: 2 000