|
|
MOSFETs HIGH POWER_NEW
- IPB65R065C7ATMA2
- Infineon Technologies
-
1:
8,02 €
-
1 245Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB65R065C7ATMA2
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1 245Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
65 mOhms
|
20 V
|
4 V
|
64 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPP65R065C7
- Infineon Technologies
-
1:
7,81 €
-
365Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPP65R065C7
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
365Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
58 mOhms
|
20 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 10A ThinPAK-4 CoolMOS C7
- IPL65R230C7
- Infineon Technologies
-
1:
3,06 €
-
6 299Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPL65R230C7
|
Infineon Technologies
|
MOSFETs N-Ch 650V 10A ThinPAK-4 CoolMOS C7
|
|
6 299Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
230 mOhms
|
20 V
|
4 V
|
20 nC
|
- 40 C
|
+ 150 C
|
67 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 650V 46A TO220-3 CoolMOS C7
- IPP65R045C7
- Infineon Technologies
-
1:
10,48 €
-
713Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPP65R045C7
|
Infineon Technologies
|
MOSFETs N-Ch 650V 46A TO220-3 CoolMOS C7
|
|
713Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
40 mOhms
|
20 V
|
3 V
|
93 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPA65R045C7
- Infineon Technologies
-
1:
10,51 €
-
168Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPA65R045C7
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
168Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
18 A
|
40 mOhms
|
20 V
|
3 V
|
93 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPA65R065C7
- Infineon Technologies
-
1:
7,84 €
-
243Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPA65R065C7
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
243Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
15 A
|
58 mOhms
|
20 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPB65R045C7ATMA2
- Infineon Technologies
-
1:
10,84 €
-
6 970Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB65R045C7ATMA2
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
6 970Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPB65R095C7ATMA2
- Infineon Technologies
-
1:
6,11 €
-
871Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB65R095C7ATMA2
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
871Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
84 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
128 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPB65R190C7ATMA2
- Infineon Technologies
-
1:
3,56 €
-
2 993Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPB65R190C7ATMA2
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
2 993Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
Si
|
SMD/SMT
|
TO-263
|
N-Channel
|
1 Channel
|
650 V
|
13 A
|
404 mOhms
|
20 V
|
3.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs N-Ch 650V 11A DPAK-2 CoolMOS C7
- IPD65R225C7
- Infineon Technologies
-
1:
2,94 €
-
1 302Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPD65R225C7
|
Infineon Technologies
|
MOSFETs N-Ch 650V 11A DPAK-2 CoolMOS C7
|
|
1 302Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
225 mOhms
|
20 V
|
4 V
|
20 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
MOSFETs HIGH POWERNEW
- IPW65R095C7
- Infineon Technologies
-
1:
6,95 €
-
678Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R095C7
|
Infineon Technologies
|
MOSFETs HIGH POWERNEW
|
|
678Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
84 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
128 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW65R190C7
- Infineon Technologies
-
1:
4,21 €
-
211Prieinamumas
-
NRND
|
„Mouser“ Dalies Nr.
726-IPW65R190C7
NRND
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
211Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
13 A
|
168 mOhms
|
20 V
|
3.5 V
|
23 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 75A TO247-3 CoolMOS C7
- IPW65R019C7
- Infineon Technologies
-
1:
21,38 €
-
488Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R019C7
|
Infineon Technologies
|
MOSFETs N-Ch 650V 75A TO247-3 CoolMOS C7
|
|
488Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
75 A
|
19 mOhms
|
20 V
|
3 V
|
215 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 650V 46A TO247-3 CoolMOS C7
- IPW65R045C7
- Infineon Technologies
-
1:
10,79 €
-
404Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R045C7
|
Infineon Technologies
|
MOSFETs N-Ch 650V 46A TO247-3 CoolMOS C7
|
|
404Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
40 mOhms
|
20 V
|
3.5 V
|
93 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPA65R125C7XKSA1
- Infineon Technologies
-
1:
4,77 €
-
59Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPA65R125C7XKSA1
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
59Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
125 mOhms
|
20 V
|
3 V
|
35 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPA65R190C7XKSA1
- Infineon Technologies
-
1:
3,19 €
-
815Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPA65R190C7XKSA1
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
815Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
168 mOhms
|
20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPD65R190C7
- Infineon Technologies
-
1:
3,06 €
-
1 076Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPD65R190C7
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
1 076Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
13 A
|
190 mOhms
|
20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 150 C
|
72 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPP65R095C7
- Infineon Technologies
-
1:
6,13 €
-
59Prieinamumas
-
500Tikėtina 2027-02-16
|
„Mouser“ Dalies Nr.
726-IPP65R095C7
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
59Prieinamumas
500Tikėtina 2027-02-16
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
84 mOhms
|
20 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
128 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER_NEW
- IPW65R065C7
- Infineon Technologies
-
1:
8,39 €
-
158Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPW65R065C7
|
Infineon Technologies
|
MOSFETs HIGH POWER_NEW
|
|
158Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
65 mOhms
|
20 V
|
3 V
|
64 nC
|
- 55 C
|
+ 150 C
|
171 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 700V 75A TO247-4
- IPZ65R019C7
- Infineon Technologies
-
1:
20,64 €
-
71Prieinamumas
|
„Mouser“ Dalies Nr.
726-IPZ65R019C7
|
Infineon Technologies
|
MOSFETs N-Ch 700V 75A TO247-4
|
|
71Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
75 A
|
17 mOhms
|
20 V
|
3 V
|
215 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs N-Ch 700V 46A TO247-4
- IPZ65R045C7
- Infineon Technologies
-
1:
12,01 €
-
380Pagal užsakymą
|
„Mouser“ Dalies Nr.
726-IPZ65R045C7
|
Infineon Technologies
|
MOSFETs N-Ch 700V 46A TO247-4
|
|
380Pagal užsakymą
Pagal užsakymą:
140 Tikėtina 2027-02-25
240 Tikėtina 2027-10-07
Gamintojo numatytas pristatymo laikas
52 Savaičių
|
|
Min.: 1
Daugkart.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
46 A
|
40 mOhms
|
20 V
|
3 V
|
93 nC
|
- 55 C
|
+ 150 C
|
227 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs 650V CoolMOS C7 Power Trans; 225mOhm
- IPP65R225C7
- Infineon Technologies
-
500:
1,19 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 22 Savaičių
|
„Mouser“ Dalies Nr.
726-IPB65R225C7
|
Infineon Technologies
|
MOSFETs 650V CoolMOS C7 Power Trans; 225mOhm
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 22 Savaičių
|
|
Min.: 500
Daugkart.: 500
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
199 mOhms
|
20 V
|
3 V
|
20 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPL65R070C7
- Infineon Technologies
-
3 000:
3,75 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 39 Savaičių
|
„Mouser“ Dalies Nr.
726-IPL65R070C7
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 39 Savaičių
|
|
Min.: 3 000
Daugkart.: 3 000
:
3 000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
62 mOhms
|
20 V
|
3 V
|
64 nC
|
- 40 C
|
+ 150 C
|
169 W
|
Enhancement
|
CoolMOS
|
Reel
|
|
|
|
MOSFETs HIGH POWER BEST IN CLASS
- IPL65R099C7
- Infineon Technologies
-
3 000:
2,57 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 39 Savaičių
|
„Mouser“ Dalies Nr.
726-IPL65R099C7
|
Infineon Technologies
|
MOSFETs HIGH POWER BEST IN CLASS
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 39 Savaičių
|
|
Min.: 3 000
Daugkart.: 3 000
:
3 000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
650 V
|
21 A
|
88 mOhms
|
20 V
|
3 V
|
45 nC
|
- 40 C
|
+ 150 C
|
128 W
|
Enhancement
|
CoolMOS
|
Reel
|
|
|
|
MOSFETs 650V CoolMOS C7 Power Trans; 130mOhm
- IPL65R130C7
- Infineon Technologies
-
3 000:
2,01 €
-
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 39 Savaičių
|
„Mouser“ Dalies Nr.
726-IPL65R130C7
|
Infineon Technologies
|
MOSFETs 650V CoolMOS C7 Power Trans; 130mOhm
|
|
Ne Sandėlyje Esančių Prekių Pristatymo Laikas 39 Savaičių
|
|
Min.: 3 000
Daugkart.: 3 000
:
3 000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
650 V
|
15 A
|
115 mOhms
|
20 V
|
3 V
|
35 nC
|
- 40 C
|
+ 150 C
|
102 W
|
Enhancement
|
CoolMOS
|
Reel
|
|