UJ4C/SC 750V Gen 4 SiC FETs

onsemi UJ4C/SC 750V Gen 4 SiC FETs are high-performance devices that deliver Figures of Merit that lower conduction losses and increase efficiency at higher speeds, improving overall cost-effectiveness. Available in 5.4mΩ to 60mΩ options, the Gen 4 series is based on a unique cascode configuration, where a high-performance SiC JFET is co-packaged with a cascode-optimized Si-MOSFET to produce a standard gate drive SiC device. The standard gate-drive characteristics of the UJ4C/SC 750V FETs allow for "drop-in replacement" functionality. Designers can enhance system performance without changing gate drive voltage by replacing existing Si IGBTs, Si FETs, SiC FETs, or Si super-junction devices with the onsemi UJ4C/SC FETs.

Rezultatai: 29
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Montavimo stilius Pakuotė / Korpusas Kanalų skaičius Vds - nutekėjimo-šaltinio pramušimo įtampa svar. – nuolatinio išleidimo srovė RDS On - Drain-Source Varža Vgs - užtūros-šaltinio įtampa Vgs th - užtūros-šaltinio slenkstinė įtampa Qg – vartų krūvis Minimali darbinė temperatūra Didžiausia darbinė temperatūra Pd - skaidos galia Kanalas Mode Kvalifikacija Prekinis pavadinimas
onsemi SiC MOSFET 750V/6MOSICFETG4TO247-4 600Prieinamumas
47,26 €
33,72 €
Min.: 1
Daugkart.: 1
Maks.: 600
Through Hole TO-247-4 1 Channel 750 V 120 A 5.9 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 714 W Enhancement SiC FET
onsemi SiC MOSFET 750V/18MOSICFETG4TO247 642Prieinamumas
12,01 €
6,90 €
6,84 €
Min.: 1
Daugkart.: 1
Maks.: 600
Through Hole TO-247-3 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/60MOSICFETG4TO247-4 562Prieinamumas
12,01 €
8,51 €
7,45 €
6,28 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/33MOSICFETG4TO263 486Prieinamumas
Pjaunama Juosta
13,08 €
7,66 €
7,25 €
Ritė
7,25 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 44 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 197 W Enhancement SiC FET
onsemi SiC MOSFET 750V/44MOSICFETG4TO263 648Prieinamumas
Pjaunama Juosta
12,07 €
6,91 €
6,54 €
Ritė
6,54 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 35.6 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFET 750V/60MOSICFETG4TO263 1 266Prieinamumas
Pjaunama Juosta
6,77 €
3,66 €
3,62 €
3,49 €
Ritė
3,49 €
3,05 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 25.8 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 128 W Enhancement SiC FET
onsemi SiC MOSFET 750V/18MOSICFETG4TO263-7 278Prieinamumas
Pjaunama Juosta
21,04 €
15,71 €
13,59 €
12,18 €
Ritė
12,18 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
onsemi SiC MOSFET 750V/60MOSICFETG4TO247 1 258Prieinamumas
13,16 €
7,94 €
6,76 €
6,22 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 750 V 28 A 74 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/11MOSICFETG4TO263-7 287Prieinamumas
Pjaunama Juosta
25,44 €
20,15 €
18,79 €
16,99 €
Ritė
16,99 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7L 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC MOSFET 750V/5MOSICFETG4TOLL 1 630Prieinamumas
Pjaunama Juosta
43,89 €
35,43 €
32,43 €
Ritė
32,43 €
Min.: 1
Daugkart.: 1
Maks.: 2 000
: 2 000
SMD/SMT MO-229-8 1 Channel 750 V 120 A 5 mOhms - 20 V, + 20 V 6 V 164 nC - 55 C + 175 C 1.153 kW Enhancement SiC FET
onsemi SiC MOSFET 750V/8MOSICFETG4TOLL 712Prieinamumas
Pjaunama Juosta
29,14 €
21,29 €
20,32 €
20,15 €
Ritė
20,15 €
Min.: 1
Daugkart.: 1
Maks.: 2 000
: 2 000
SMD/SMT MO-229-8 1 Channel 750 V 106 A 8 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 600 W Enhancement SiC FET
onsemi SiC MOSFET 750V/18MOSICFETG4TOLL 2 497Prieinamumas
Pjaunama Juosta
19,75 €
12,81 €
12,08 €
11,44 €
Ritė
11,44 €
Min.: 1
Daugkart.: 1
: 2 000
SMD/SMT MO-229-8 1 Channel 750 V 53 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 349 W Enhancement SiC FET
onsemi SiC MOSFET 750V/33MOSICFETG4TOLL 2 815Prieinamumas
Pjaunama Juosta
13,55 €
8,02 €
7,59 €
Ritė
7,59 €
Min.: 1
Daugkart.: 1
: 2 000
SMD/SMT MO-229-8 1 Channel 750 V 44 A 33 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 205 W Enhancement SiC FET
onsemi SiC MOSFET 750V/44MOSICFETG4TOLL 2 525Prieinamumas
Pjaunama Juosta
11,99 €
6,85 €
6,48 €
Ritė
6,48 €
Min.: 1
Daugkart.: 1
: 2 000
SMD/SMT MO-229-8 1 Channel 750 V 35.6 A 44 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 181 W Enhancement SiC FET
onsemi SiC MOSFET 750V/60MOSICFETG4TOLL 3 269Prieinamumas
Pjaunama Juosta
9,90 €
5,54 €
5,33 €
5,04 €
Ritė
5,04 €
Min.: 1
Daugkart.: 1
: 2 000
SMD/SMT MO-229-8 1 Channel 750 V 27.8 A 58 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement SiC FET
onsemi SiC MOSFET 750V/23MOSICFETG4TOLL 1 266Prieinamumas
Pjaunama Juosta
16,51 €
11,76 €
10,35 €
9,67 €
Ritė
9,67 €
Min.: 1
Daugkart.: 1
: 2 000
SMD/SMT MO-229-8 1 Channel 750 V 64 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 278 W Enhancement SiC FET
onsemi SiC MOSFET 750V/44MOSICFETG4TO247 3 930Prieinamumas
2 400Tikėtina 2026-10-19
13,36 €
7,64 €
7,10 €
7,06 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/23MOSICFETG4TO247 313Prieinamumas
600Tikėtina 2026-12-18
10,61 €
5,85 €
5,52 €
Min.: 1
Daugkart.: 1
Maks.: 600
Through Hole TO-247-3 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/23MOSICFETG4TO247 1 908Prieinamumas
11,04 €
6,20 €
6,04 €
Min.: 1
Daugkart.: 1
Maks.: 600
Through Hole TO-247-4 1 Channel 750 V 66 A 29 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 306 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/33MOSICFETG4TO247 211Prieinamumas
13,44 €
7,60 €
7,52 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-3 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/33MOSICFETG4TO247 291Prieinamumas
14,64 €
8,32 €
7,82 €
Min.: 1
Daugkart.: 1
Through Hole TO-247-4 1 Channel 750 V 47 A 41 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 242 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/44MOSICFETG4TO247 371Prieinamumas
10,49 €
5,78 €
5,44 €
Min.: 1
Daugkart.: 1
Maks.: 600
Through Hole TO-247-3 1 Channel 750 V 37.4 A 56 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 203 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFET 750V/9MOSICFETG4TO263-7 331Prieinamumas
Pjaunama Juosta
28,81 €
20,98 €
19,87 €
Ritė
19,87 €
Min.: 1
Daugkart.: 1
: 800
SMD/SMT D2PAK-7 1 Channel 750 V 106 A 9 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 375 W Enhancement SiC FET
onsemi SiC MOSFET 750V/11MOSICFETG4TO247-4 976Prieinamumas
17,03 €
12,72 €
11,00 €
10,41 €
Min.: 1
Daugkart.: 1
Maks.: 600
Through Hole TO-247-4 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC MOSFET 750V/18MOSICFETG4TO247 10Prieinamumas
600Tikėtina 2027-10-28
20,14 €
12,46 €
Min.: 1
Daugkart.: 1
Maks.: 600
Through Hole TO-247-4 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET