Power MOSFETs

Diodes Incorporated offers a broad range of Power MOSFETs, enabling designers to select a device optimized for their end application, thus enabling next generation consumer, computer and communication product designs. The Diodes portfolio is ideally suited to meeting the circuit requirements of DC-DC conversion, load switching, motor control, backlighting, battery protection, battery chargers, audio circuits, and automotive applications.

Rezultatai: 1 445
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS

Diodes Incorporated MOSFETs Mosfet H-Bridge 60/-60V 1.8/-1.4A 32 124Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated MOSFETs 60V N-Ch Enh FET 20Vgss 33.3nC 2.0W 1 273Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500
Diodes Incorporated MOSFETs MOSFET P-CHANNEL SOT-523 1 507 132Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 3 000
: 3 000

Diodes Incorporated MOSFETs 20V N-Ch Enh Mode 12Vgss 80A .61W 64 037Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Diodes Incorporated MOSFETs MOSFET N-CHANNEL P-CHANNEL SOT-563 233 133Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 3 000
: 3 000


Diodes Incorporated MOSFETs 70V P-Ch Enh FET 160Vgs 10V 250mOhm 17 666Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 1 000
: 1 000

Diodes Incorporated Dvipoliai tranzistoriai – BJT PNP Medium Power 4 949Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 230
: 4 000


Diodes Incorporated MOSFETs N-Chnl 200V 22 313Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 400
: 3 000


Diodes Incorporated MOSFETs 60V TRENCH MOSFET 20V VGS P-Channel 3 347Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Diodes Incorporated MOSFETs 20V N-Ch 4.6 MOSFET w/low gate drive cap 4 645Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000


Diodes Incorporated MOSFETs 100V N-Ch Enh FET 20Vgss 2.6A 1.2W 37 854Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 390
: 3 000

Diodes Incorporated MOSFETs 100V 175c N-Ch FET 28mOhm 10V 55A 2 048Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K 3 368Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated MOSFETs 30V P-Ch Enh FET 20Vgss 0.9W -80A 8 651Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000

Diodes Incorporated MOSFETs P-Ch Enh Mode -30V Low Rdson -20Vgss 9 479Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 320
: 2 500

Diodes Incorporated MOSFETs MOSFET BVDSS: 61V-100V TO252 T&R 2.5K 6 988Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 140
: 2 500


Diodes Incorporated MOSFETs MOSFET BVDSS 2 442Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500

Diodes Incorporated MOSFETs 40V 175c N-Ch FET 3.7mOHm 10V 100A 5 000Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500
Diodes Incorporated MOSFETs 40V 175c N-Ch Enh 20Vgss 7.3mOhm 70A 6 927Prieinamumas
Min.: 1
Daugkart.: 1
: 2 500


Diodes Incorporated MOSFETs N-Chan 60V MOSFET (UMOS) 17 023Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 220
: 1 000

Diodes Incorporated MOSFETs P-Ch 100 Volt 5.2A 8 758Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 320
: 2 500

Diodes Incorporated MOSFETs P-Chan 60V MOSFET (UMOS) 9 697Prieinamumas
7 500Tikėtina 2027-01-15
Min.: 1
Daugkart.: 1
Maks.: 140
: 2 500


Diodes Incorporated MOSFETs MOSFET BVDSS 76 792Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 3 000
: 3 000

Diodes Incorporated MOSFETs MOSFET P-CHAN. 19 788Prieinamumas
Min.: 1
Daugkart.: 1
: 3 000


Diodes Incorporated MOSFETs MOSFET BVDSS: 25V-30V 8 550Prieinamumas
Min.: 1
Daugkart.: 1
Maks.: 210
: 2 500