650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

Rezultatai: 28
Pasirinkite Vaizdas Dalies Nr. Gam. Aprašymas Duomenų Lapas Prieinamumas Kainodara (EUR) Filtruokite lentelėje pateiktus rezultatus pagal vieneto kainą, remdamiesi kiekiu. Qty. RoHS ECAD modelis Technologijos Pakuotė / Korpusas Montavimo stilius Configuration Collector- Emitter Voltage VCEO Max Kolektoriaus ir Emiterio Stoties Įtampa Didžiausia vartų emiterio įtampa Nuolatinė kolektoriaus srovė esant 25 C Pd - skaidos galia Minimali darbinė temperatūra Didžiausia darbinė temperatūra Serija Pakavimas
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 417Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO247PLUS 4pin package 198Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 283Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-3 package 318Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247 3pin package 408Prieinamumas
480Tikėtina 2026-09-17
Min.: 1
Daugkart.: 1

IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 487Prieinamumas
480Tikėtina 2026-10-29
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 150 A IGBT with anti-parallel diode in TO247PLUS-4 package 318Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 621 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 680Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-3 package Vykdymo Laikas 40 Savaičių
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 140 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 36Prieinamumas
2 400Pagal užsakymą
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package 320Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247 3pin package 237Prieinamumas
240Tikėtina 2027-04-05
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 40 A IGBT with anti-parallel diode in TO-247-3 HCC package 438Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 208 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 50 A IGBT with anti-parallel diode in TO-247-3 HCC package 232Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 249 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 75 A IGBT with anti-parallel diode in TO-247-3 HCC package 162Prieinamumas
240Tikėtina 2026-12-03
Min.: 1
Daugkart.: 1

Si TO-247-3 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 341 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 120 A IGBT with anti-parallel diode in TO247PLUS-4 package 275Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 160 A 498 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 40 A IGBT with anti-parallel diode in TO247-4 package 317Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 210 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 650 V, 50 A IGBT with anti-parallel diode in TO247-4 package 97Prieinamumas
Min.: 1
Daugkart.: 1

Si TO-247-4 Through Hole Single 650 V 1.6 V - 20 V, 20 V 80 A 250 W - 40 C + 175 C IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS-3pin package 82Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 120 A IGBT with anti-parallel diode in TO-247PLUS 4pin package 149Prieinamumas
240Tikėtina 2026-10-29
Min.: 1
Daugkart.: 1

Si IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 40 A IGBT with anti-parallel diode in TO-247 4pin package 187Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247PLUS 3pin package 27Prieinamumas
240Tikėtina 2026-10-01
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 50 A IGBT with anti-parallel diode in TO-247 4pin package 6Prieinamumas
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 75 A IGBT with anti-parallel diode in TO-247 4pin package 5Prieinamumas
480Pagal užsakymą
Min.: 1
Daugkart.: 1

IGBT7 H7 Tube
Infineon Technologies IGBT 1200 V, 100 A IGBT with anti-parallel diode in TO-247PLUS-3pin package
460Tikėtina 2027-04-22
Min.: 1
Daugkart.: 1

- 20 V, 20 V IGBT7 H7 Tube