SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V
+1 vaizdas
NTH4L040N120SC1
onsemi
1:
16,84 €
1 390 Prieinamumas
„Mouser“ Dalies Nr.
863-NTH4L040N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 40MOHM 1200V
1 390 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Maks.: 40
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
58 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
319 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
+1 vaizdas
NVHL160N120SC1
onsemi
1:
11,65 €
2 419 Prieinamumas
„Mouser“ Dalies Nr.
863-NVHL160N120SC1
onsemi
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
2 419 Prieinamumas
1
11,65 €
10
6,49 €
120
6,02 €
510
5,97 €
1 020
5,60 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
17 A
224 mOhms
- 15 V, + 25 V
4.3 V
34 nC
- 55 C
+ 175 C
119 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
NTBG040N120SC1
onsemi
1:
18,47 €
947 Prieinamumas
„Mouser“ Dalies Nr.
863-NTBG040N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
947 Prieinamumas
1
18,47 €
10
13,62 €
100
13,55 €
500
12,89 €
800
12,89 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
1 Channel
1.2 kV
60 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
357 W
Enhancement
EliteSiC
SiC MOSFET 20MW 1200V
+1 vaizdas
NVHL020N120SC1
onsemi
1:
45,03 €
893 Prieinamumas
„Mouser“ Dalies Nr.
863-NVHL020N120SC1
onsemi
SiC MOSFET 20MW 1200V
893 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
103 A
28 mOhms
- 15 V, + 25 V
4.3 V
203 nC
- 55 C
+ 175 C
535 W
Enhancement
AEC-Q101
EliteSiC
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
+1 vaizdas
NVH4L080N120SC1
onsemi
1:
10,95 €
660 Prieinamumas
„Mouser“ Dalies Nr.
863-NVH4L080N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
660 Prieinamumas
1
10,95 €
10
6,05 €
1 020
5,75 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
29 A
80 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
170 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
NVBG080N120SC1
onsemi
1:
10,44 €
1 930 Prieinamumas
„Mouser“ Dalies Nr.
863-NVBG080N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
1 930 Prieinamumas
1
10,44 €
10
5,87 €
100
5,72 €
500
5,41 €
800
5,41 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
1 Channel
1.2 kV
30 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
179 W
Enhancement
AEC-Q101
EliteSiC
SiC MOSFET SIC MOS TO247-3L 80MOHM 1200V
+1 vaizdas
NTHL080N120SC1A
onsemi
1:
11,90 €
1 147 Prieinamumas
„Mouser“ Dalies Nr.
863-NTHL080N120SC1A
onsemi
SiC MOSFET SIC MOS TO247-3L 80MOHM 1200V
1 147 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Maks.: 40
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
31 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
178 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
NTBG160N120SC1
onsemi
1:
8,12 €
1 830 Prieinamumas
„Mouser“ Dalies Nr.
863-NTBG160N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
1 830 Prieinamumas
1
8,12 €
10
4,75 €
100
4,44 €
500
3,77 €
800
3,77 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
1 Channel
1.2 kV
19.5 A
224 mOhms
- 15 V, + 25 V
4.3 V
33.8 nC
- 55 C
+ 175 C
136 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART
+1 vaizdas
NTH4L160N120SC1
onsemi
1:
6,82 €
1 853 Prieinamumas
„Mouser“ Dalies Nr.
863-NTH4L160N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART
1 853 Prieinamumas
1
6,82 €
10
4,73 €
120
4,40 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
17.3 A
224 mOhms
- 15 V, + 25 V
4.3 V
34 nC
- 55 C
+ 175 C
111 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS 80MW 1200 V 80 mOhms 44A
+1 vaizdas
NVHL080N120SC1
onsemi
1:
14,50 €
1 182 Prieinamumas
NRND
„Mouser“ Dalies Nr.
863-NVHL080N120SC1
NRND
onsemi
SiC MOSFET SIC MOS 80MW 1200 V 80 mOhms 44A
1 182 Prieinamumas
1
14,50 €
10
10,10 €
120
9,27 €
510
8,77 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
31 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
178 W
Enhancement
AEC-Q101
EliteSiC
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
+1 vaizdas
NVHL040N120SC1
onsemi
1:
23,69 €
205 Prieinamumas
„Mouser“ Dalies Nr.
863-NVHL040N120SC1
onsemi
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
205 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
60 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
348 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM AUTO PART
+1 vaizdas
NVH4L160N120SC1
onsemi
1:
12,26 €
181 Prieinamumas
„Mouser“ Dalies Nr.
863-NVH4L160N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 1200V 160MOHM AUTO PART
181 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
17.3 A
224 mOhms
- 15 V, + 25 V
4.3 V
34 nC
- 55 C
+ 175 C
111 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
+1 vaizdas
NVH4L020N120SC1
onsemi
1:
41,47 €
282 Prieinamumas
„Mouser“ Dalies Nr.
863-NVH4L020N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
282 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
102 A
28 mOhms
- 15 V, + 25 V
4.3 V
220 nC
- 55 C
+ 175 C
510 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 1200V 40MOHM AUTO PART
+1 vaizdas
NVH4L040N120SC1
onsemi
1:
24,37 €
224 Prieinamumas
„Mouser“ Dalies Nr.
863-NVH4L040N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 1200V 40MOHM AUTO PART
224 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
58 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
319 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
NVBG040N120SC1
onsemi
1:
25,84 €
53 Prieinamumas
„Mouser“ Dalies Nr.
863-NVBG040N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 40MOHM 1200V
53 Prieinamumas
1
25,84 €
10
18,83 €
100
17,55 €
500
15,59 €
800
15,59 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
1 Channel
1.2 kV
60 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
357 W
Enhancement
EliteSiC
SiC MOSFET SIC 1700V MOS 28MO IN TO247-4L
+1 vaizdas
NTH4L028N170M1
onsemi
1:
31,02 €
767 Prieinamumas
NRND
„Mouser“ Dalies Nr.
863-NTH4L028N170M1
NRND
onsemi
SiC MOSFET SIC 1700V MOS 28MO IN TO247-4L
767 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Maks.: 30
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.7 kV
81 A
40 mOhms
- 15 V, + 25 V
4.3 V
200 nC
- 55 C
+ 175 C
535 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS 20MW 1200V
NTBG020N120SC1
onsemi
1:
33,51 €
2 163 Prieinamumas
„Mouser“ Dalies Nr.
863-NTBG020N120SC1
onsemi
SiC MOSFET SIC MOS 20MW 1200V
2 163 Prieinamumas
1
33,51 €
10
25,34 €
100
25,33 €
500
23,99 €
800
23,99 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
1 Channel
1.2 kV
98 A
28 mOhms
- 15 V, + 25 V
4.3 V
220 nC
- 55 C
+ 175 C
468 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
NTBG080N120SC1
onsemi
1:
12,19 €
456 Prieinamumas
„Mouser“ Dalies Nr.
863-NTBG080N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 80MOHM 1200V
456 Prieinamumas
1
12,19 €
10
7,00 €
500
6,62 €
800
6,62 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
1 Channel
1.2 kV
30 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
179 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
+1 vaizdas
NTH4L020N120SC1
onsemi
1:
30,50 €
187 Prieinamumas
„Mouser“ Dalies Nr.
863-NTH4L020N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 20MOHM 1200V
187 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
102 A
28 mOhms
- 15 V, + 25 V
4.3 V
220 nC
- 55 C
+ 175 C
510 W
Enhancement
EliteSiC
SiC MOSFET 20MW 1200V
+1 vaizdas
NTHL020N120SC1
onsemi
1:
33,24 €
760 Prieinamumas
„Mouser“ Dalies Nr.
863-NTHL020N120SC1
onsemi
SiC MOSFET 20MW 1200V
760 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
103 A
28 mOhms
- 15 V, + 25 V
4.3 V
203 nC
- 55 C
+ 175 C
535 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
+1 vaizdas
NTHL160N120SC1
onsemi
1:
8,27 €
757 Prieinamumas
„Mouser“ Dalies Nr.
863-NTHL160N120SC1
onsemi
SiC MOSFET SIC MOS TO247-3L 160MOHM 1200V
757 Prieinamumas
Pirkti
Min.: 1
Daugkart.: 1
Maks.: 30
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
17 A
224 mOhms
- 15 V, + 25 V
4.3 V
34 nC
- 55 C
+ 175 C
119 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 20MOHM 1
NVBG020N120SC1
onsemi
1:
47,63 €
84 Prieinamumas
„Mouser“ Dalies Nr.
863-NVBG020N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 20MOHM 1
84 Prieinamumas
1
47,63 €
10
38,65 €
100
34,53 €
800
34,53 €
Pirkti
Min.: 1
Daugkart.: 1
Reel :
800
SMD/SMT
D2PAK-7
1 Channel
1.2 kV
98 A
28 mOhms
- 15 V, + 25 V
4.3 V
220 nC
- 55 C
+ 175 C
468 W
Enhancement
AEC-Q101
EliteSiC
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
NVBG160N120SC1
onsemi
1:
11,26 €
539 Prieinamumas
1 600 Pagal užsakymą
„Mouser“ Dalies Nr.
863-NVBG160N120SC1
onsemi
SiC MOSFET SIC MOS D2PAK-7L 160MOHM 1200V
539 Prieinamumas
1 600 Pagal užsakymą
Peržiūrėti datas
Turime sandėlyje:
539 Galime išsiųsti iš karto
Gamintojo numatytas pristatymo laikas
44 Savaičių
1
11,26 €
10
7,54 €
100
6,69 €
500
5,93 €
800
5,93 €
Pirkti
Min.: 1
Daugkart.: 1
Maks.: 800
Reel :
800
Išsami Informacija
SMD/SMT
D2PAK-7
1 Channel
1.2 kV
19.5 A
224 mOhms
- 15 V, + 25 V
4.3 V
33.8 nC
- 55 C
+ 175 C
136 W
Enhancement
AEC-Q101
EliteSiC
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
+1 vaizdas
NTH4L080N120SC1
onsemi
1:
11,24 €
183 Prieinamumas
„Mouser“ Dalies Nr.
863-NTH4L080N120SC1
onsemi
SiC MOSFET SIC MOS TO247-4L 80MOHM 1200V
183 Prieinamumas
1
11,24 €
10
6,24 €
120
5,96 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-4
1 Channel
1.2 kV
29 A
110 mOhms
- 15 V, + 25 V
4.3 V
56 nC
- 55 C
+ 175 C
170 W
Enhancement
EliteSiC
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
+1 vaizdas
NTHL040N120SC1
onsemi
1:
19,27 €
440 Tikėtina 2026-09-15
„Mouser“ Dalies Nr.
863-NTHL040N120SC1
onsemi
SiC MOSFET SIC MOS TO247-3L 40MOHM 1200V
440 Tikėtina 2026-09-15
1
19,27 €
10
13,53 €
120
12,65 €
Pirkti
Min.: 1
Daugkart.: 1
Išsami Informacija
Through Hole
TO-247-3
1 Channel
1.2 kV
60 A
56 mOhms
- 15 V, + 25 V
4.3 V
106 nC
- 55 C
+ 175 C
348 W
Enhancement
EliteSiC