|
|
GaN FET EPC eGaN FET,40 V, 16 milliohm at 5 V, LGA 1.7 x 1.1
- EPC2014C
- EPC
-
1:
2,03 €
-
16 053Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2014C
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,40 V, 16 milliohm at 5 V, LGA 1.7 x 1.1
|
|
16 053Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Efficient Power Conversion
- EPC2019
- EPC
-
1:
4,84 €
-
2 863Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2019
"Mouser Naujiena"
|
EPC
|
Efficient Power Conversion
|
|
2 863Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
Efficient Power Conversion
- EPC2021
- EPC
-
1:
9,31 €
-
952Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2021
"Mouser Naujiena"
|
EPC
|
Efficient Power Conversion
|
|
952Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
GaN FET EPC eGaN FET,60 V, 2.6 milliohm at 5 V, BGA 4.6 x 2.6
- EPC2031
- EPC
-
1:
7,72 €
-
450Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2031
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,60 V, 2.6 milliohm at 5 V, BGA 4.6 x 2.6
|
|
450Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
500
|
|
|
|
|
GaN FET EPC eGaN FET,60 V, 45 milliohm at 5 V, BGA 0.9 x 0.9
- EPC2035
- EPC
-
1:
1,81 €
-
3 771Prieinamumas
-
7 500Tikėtina 2027-02-19
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2035
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,60 V, 45 milliohm at 5 V, BGA 0.9 x 0.9
|
|
3 771Prieinamumas
7 500Tikėtina 2027-02-19
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,100 V, 73 milliohm at 5 V, BGA 0.9 x 0.9
- EPC2036
- EPC
-
1:
1,81 €
-
10 810Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2036
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 73 milliohm at 5 V, BGA 0.9 x 0.9
|
|
10 810Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,100 V, 3300 milliohm at 5 V, BGA 0.9 x 0.9
- EPC2038
- EPC
-
1:
1,87 €
-
5 643Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2038
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 3300 milliohm at 5 V, BGA 0.9 x 0.9
|
|
5 643Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,15 V, 30 milliohm at 5 V, BGA 0.85 x 1.2
- EPC2040
- EPC
-
1:
1,62 €
-
11 668Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2040
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,15 V, 30 milliohm at 5 V, BGA 0.85 x 1.2
|
|
11 668Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25
- EPC2044
- EPC
-
1:
2,27 €
-
2 500Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2044
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 10.5 milliohm at 5 V, CuPillar 2.15 x 1.25
|
|
2 500Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET, 350 V, 80 milliohm at 5 V, BGA 1.95 x 1.95
- EPC2050
- EPC
-
1:
6,19 €
-
2 927Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2050
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET, 350 V, 80 milliohm at 5 V, BGA 1.95 x 1.95
|
|
2 927Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,100 V, 25 milliohm at 5 V, BGA 1.3 x 0.85
- EPC2051
- EPC
-
1:
1,81 €
-
4 500Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2051
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 25 milliohm at 5 V, BGA 1.3 x 0.85
|
|
4 500Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5
- EPC2052
- EPC
-
1:
2,18 €
-
9 164Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2052
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 13.5 milliohm at 5 V, BGA 1.5 x 1.5
|
|
9 164Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5
- EPC2055
- EPC
-
1:
3,00 €
-
5 168Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2055
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5
|
|
5 168Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET, 80 V, 3.6 milliohm at 5 V, LGA 3.5 x 1.95
- EPC2065
- EPC
-
1:
3,97 €
-
2 489Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2065
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET, 80 V, 3.6 milliohm at 5 V, LGA 3.5 x 1.95
|
|
2 489Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
GaN FET EPC eGaN FET,40 V, 1.1 milliohm at 5 V, LGA 6.05 X 2.3
- EPC2066
- EPC
-
1:
6,86 €
-
1 363Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2066
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,40 V, 1.1 milliohm at 5 V, LGA 6.05 X 2.3
|
|
1 363Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
GaN FET EPC eGaN FET,40 V, 1.5 milliohm at 5 V, LGA 3.25 x 2.85
- EPC2067
- EPC
-
1:
5,25 €
-
1 731Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2067
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,40 V, 1.5 milliohm at 5 V, LGA 3.25 x 2.85
|
|
1 731Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
GaN FET EPC eGaN FET,40 V, 2.25 milliohm at 5 V, LGA 3.25 x 3.25
- EPC2069
- EPC
-
1:
3,97 €
-
900Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2069
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,40 V, 2.25 milliohm at 5 V, LGA 3.25 x 3.25
|
|
900Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
GaN FET EPC eGaN FET,100 V, 2.2 milliohm at 5 V, LGA 4.45 x 2.3
- EPC2071
- EPC
-
1:
7,22 €
-
450Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2071
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,100 V, 2.2 milliohm at 5 V, LGA 4.45 x 2.3
|
|
450Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
1 000
|
|
|
|
|
GaN FET EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3
- EPC2102
- EPC
-
1:
10,24 €
-
490Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2102
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3
|
|
490Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
500
|
|
|
|
|
GaN FET EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
- EPC2103
- EPC
-
1:
9,90 €
-
716Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2103
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN Symetrical Half Bridge80 V, 5.5 milliohm at 5 V, BGA 6.05 x 2.3
|
|
716Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
500
|
|
|
|
|
GaN FET EPC eGaN Symetrical Half Bridge,100 V, 6.8 milliohm at 5 V, BGA 6.05 x 2.3
- EPC2104
- EPC
-
1:
10,24 €
-
495Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2104
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN Symetrical Half Bridge,100 V, 6.8 milliohm at 5 V, BGA 6.05 x 2.3
|
|
495Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
500
|
|
|
|
|
GaN FET EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
- EPC2110
- EPC
-
1:
3,04 €
-
2 500Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2110
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35
|
|
2 500Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Lazerio tvarkyklės IC LASER DRVR 40V 10A 3.3VLOGIC
- EPC21601
- EPC
-
1:
2,58 €
-
1 754Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC21601
"Mouser Naujiena"
|
EPC
|
Lazerio tvarkyklės IC LASER DRVR 40V 10A 3.3VLOGIC
|
|
1 754Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
Lazerio tvarkyklės IC LASER DRVR 40V 15A LVDS LOGIC
- EPC21603
- EPC
-
1:
2,58 €
-
2 476Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC21603
"Mouser Naujiena"
|
EPC
|
Lazerio tvarkyklės IC LASER DRVR 40V 15A LVDS LOGIC
|
|
2 476Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
GaN FET EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
- EPC2207
- EPC
-
1:
2,94 €
-
7 861Prieinamumas
-
"Mouser Naujiena"
|
„Mouser“ Dalies Nr.
65-EPC2207
"Mouser Naujiena"
|
EPC
|
GaN FET EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0
|
|
7 861Prieinamumas
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|