|
|
Igbt Moduliai 1700 V, 900 A dual IGBT module
- FF900R17ME7WB11BPSA1
- Infineon Technologies
-
1:
220,16 €
-
11Prieinamumas
|
„Mouser“ Dalies Nr.
726-FF900R17ME7WB11B
|
Infineon Technologies
|
Igbt Moduliai 1700 V, 900 A dual IGBT module
|
|
11Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs IFX FET 60V
- ISG0614N06NM5HATMA1
- Infineon Technologies
-
1:
4,47 €
-
350Prieinamumas
|
„Mouser“ Dalies Nr.
726-ISG0614N06NM5HAT
|
Infineon Technologies
|
MOSFETs IFX FET 60V
|
|
350Prieinamumas
|
|
|
4,47 €
|
|
|
2,98 €
|
|
|
2,12 €
|
|
|
1,88 €
|
|
|
1,76 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFET moduliai 1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET
- BSM300D12P4G101
- ROHM Semiconductor
-
1:
552,31 €
-
1Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM300D12P4G101
|
ROHM Semiconductor
|
MOSFET moduliai 1200V, 291A, Half bridge, Full SiC-Power Module with Trench MOSFET
|
|
1Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFET moduliai 1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET
- BSM600D12P4G103
- ROHM Semiconductor
-
1:
1 041,28 €
-
4Prieinamumas
|
„Mouser“ Dalies Nr.
755-BSM600D12P4G103
|
ROHM Semiconductor
|
MOSFET moduliai 1200V, 567A, Half bridge, Full SiC-Power Module with Trench MOSFET
|
|
4Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
MOSFETs -100V 12.5A, Dual Pch+Pch, HSOP8, Power MOSFET: HP8JE5 is a low on-resistance MOSFET ideal for Switching and Motor drives applications.
- HP8JE5TB1
- ROHM Semiconductor
-
1:
2,58 €
-
1 956Prieinamumas
|
„Mouser“ Dalies Nr.
755-HP8JE5TB1
|
ROHM Semiconductor
|
MOSFETs -100V 12.5A, Dual Pch+Pch, HSOP8, Power MOSFET: HP8JE5 is a low on-resistance MOSFET ideal for Switching and Motor drives applications.
|
|
1 956Prieinamumas
|
|
|
2,58 €
|
|
|
1,68 €
|
|
|
1,15 €
|
|
|
0,929 €
|
|
|
0,886 €
|
|
|
0,833 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB6 is a low on-resistance MOSFET ideal for switching applications.
- HP8KB6TB1
- ROHM Semiconductor
-
1:
2,08 €
-
5 000Prieinamumas
|
„Mouser“ Dalies Nr.
755-HP8KB6TB1
|
ROHM Semiconductor
|
MOSFETs 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB6 is a low on-resistance MOSFET ideal for switching applications.
|
|
5 000Prieinamumas
|
|
|
2,08 €
|
|
|
1,34 €
|
|
|
0,912 €
|
|
|
0,726 €
|
|
|
0,667 €
|
|
|
0,613 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB7 is a low on-resistance MOSFET ideal for switching applications.
- HP8KB7TB1
- ROHM Semiconductor
-
1:
3,18 €
-
4 969Prieinamumas
|
„Mouser“ Dalies Nr.
755-HP8KB7TB1
|
ROHM Semiconductor
|
MOSFETs 40V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KB7 is a low on-resistance MOSFET ideal for switching applications.
|
|
4 969Prieinamumas
|
|
|
3,18 €
|
|
|
2,08 €
|
|
|
1,45 €
|
|
|
1,19 €
|
|
|
1,12 €
|
|
|
Peržiūrėti
|
|
|
1,18 €
|
|
|
1,10 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 60V 23A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC6 is a low on-resistance MOSFET ideal for switching applications.
- HP8KC6TB1
- ROHM Semiconductor
-
1:
2,09 €
-
4 580Prieinamumas
|
„Mouser“ Dalies Nr.
755-HP8KC6TB1
|
ROHM Semiconductor
|
MOSFETs 60V 23A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC6 is a low on-resistance MOSFET ideal for switching applications.
|
|
4 580Prieinamumas
|
|
|
2,09 €
|
|
|
1,34 €
|
|
|
0,912 €
|
|
|
0,728 €
|
|
|
0,647 €
|
|
|
Peržiūrėti
|
|
|
0,669 €
|
|
|
0,624 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 60V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC7 is a low on-resistance MOSFET ideal for switching applications.
- HP8KC7TB1
- ROHM Semiconductor
-
1:
3,20 €
-
4 956Prieinamumas
|
„Mouser“ Dalies Nr.
755-HP8KC7TB1
|
ROHM Semiconductor
|
MOSFETs 60V 24A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KC7 is a low on-resistance MOSFET ideal for switching applications.
|
|
4 956Prieinamumas
|
|
|
3,20 €
|
|
|
2,09 €
|
|
|
1,46 €
|
|
|
1,19 €
|
|
|
1,18 €
|
|
|
1,11 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 100V 17A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE6 is a low on-resistance MOSFET ideal for switching applications.
- HP8KE6TB1
- ROHM Semiconductor
-
1:
2,10 €
-
4 870Prieinamumas
|
„Mouser“ Dalies Nr.
755-HP8KE6TB1
|
ROHM Semiconductor
|
MOSFETs 100V 17A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE6 is a low on-resistance MOSFET ideal for switching applications.
|
|
4 870Prieinamumas
|
|
|
2,10 €
|
|
|
1,35 €
|
|
|
0,92 €
|
|
|
0,732 €
|
|
|
0,659 €
|
|
|
Peržiūrėti
|
|
|
0,674 €
|
|
|
0,634 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 40V 16.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MB5 is a low on-resistance MOSFET ideal for switching applications.
- HP8MB5TB1
- ROHM Semiconductor
-
1:
1,81 €
-
4 945Prieinamumas
|
„Mouser“ Dalies Nr.
755-HP8MB5TB1
|
ROHM Semiconductor
|
MOSFETs 40V 16.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MB5 is a low on-resistance MOSFET ideal for switching applications.
|
|
4 945Prieinamumas
|
|
|
1,81 €
|
|
|
1,16 €
|
|
|
0,783 €
|
|
|
0,622 €
|
|
|
0,534 €
|
|
|
Peržiūrėti
|
|
|
0,569 €
|
|
|
0,514 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 60V 12A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MC5 is a low on-resistance MOSFET ideal for switching applications.
- HP8MC5TB1
- ROHM Semiconductor
-
1:
1,81 €
-
4 646Prieinamumas
|
„Mouser“ Dalies Nr.
755-HP8MC5TB1
|
ROHM Semiconductor
|
MOSFETs 60V 12A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8MC5 is a low on-resistance MOSFET ideal for switching applications.
|
|
4 646Prieinamumas
|
|
|
1,81 €
|
|
|
1,16 €
|
|
|
0,783 €
|
|
|
0,622 €
|
|
|
0,534 €
|
|
|
Peržiūrėti
|
|
|
0,569 €
|
|
|
0,511 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 100V 8.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8ME5 is a low on-resistance MOSFET ideal for switching applications.
- HP8ME5TB1
- ROHM Semiconductor
-
1:
1,81 €
-
10 422Prieinamumas
|
„Mouser“ Dalies Nr.
755-HP8ME5TB1
|
ROHM Semiconductor
|
MOSFETs 100V 8.5A, Dual Nch+Pch, HSOP8, Power MOSFET: HP8ME5 is a low on-resistance MOSFET ideal for switching applications.
|
|
10 422Prieinamumas
|
|
|
1,81 €
|
|
|
1,16 €
|
|
|
0,78 €
|
|
|
0,619 €
|
|
|
0,568 €
|
|
|
0,518 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs 40V 12A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KB5 is a low on-resistance MOSFET ideal for switching applications.
- HT8KB5TB1
- ROHM Semiconductor
-
1:
1,44 €
-
9 000Prieinamumas
|
„Mouser“ Dalies Nr.
755-HT8KB5TB1
|
ROHM Semiconductor
|
MOSFETs 40V 12A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KB5 is a low on-resistance MOSFET ideal for switching applications.
|
|
9 000Prieinamumas
|
|
|
1,44 €
|
|
|
0,912 €
|
|
|
0,605 €
|
|
|
0,475 €
|
|
|
0,379 €
|
|
|
Peržiūrėti
|
|
|
0,433 €
|
|
|
0,377 €
|
|
|
0,37 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 60V 10A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC5 is a low on-resistance MOSFET ideal for switching applications.
- HT8KC5TB1
- ROHM Semiconductor
-
1:
1,44 €
-
6 572Prieinamumas
|
„Mouser“ Dalies Nr.
755-HT8KC5TB1
|
ROHM Semiconductor
|
MOSFETs 60V 10A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC5 is a low on-resistance MOSFET ideal for switching applications.
|
|
6 572Prieinamumas
|
|
|
1,44 €
|
|
|
0,912 €
|
|
|
0,607 €
|
|
|
0,477 €
|
|
|
0,434 €
|
|
|
Peržiūrėti
|
|
|
0,435 €
|
|
|
0,392 €
|
|
|
0,372 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 60V 15A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC6 is a low on-resistance MOSFET ideal for switching applications.
- HT8KC6TB1
- ROHM Semiconductor
-
1:
1,94 €
-
3 755Prieinamumas
|
„Mouser“ Dalies Nr.
755-HT8KC6TB1
|
ROHM Semiconductor
|
MOSFETs 60V 15A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KC6 is a low on-resistance MOSFET ideal for switching applications.
|
|
3 755Prieinamumas
|
|
|
1,94 €
|
|
|
1,25 €
|
|
|
0,844 €
|
|
|
0,672 €
|
|
|
0,587 €
|
|
|
Peržiūrėti
|
|
|
0,617 €
|
|
|
0,565 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE6 is a low on-resistance MOSFET ideal for switching applications.
- HT8KE6TB1
- ROHM Semiconductor
-
1:
1,98 €
-
5 917Prieinamumas
|
„Mouser“ Dalies Nr.
755-HT8KE6TB1
|
ROHM Semiconductor
|
MOSFETs 100V 13A, Dual Nch+Nch, HSMT8, Power MOSFET: HT8KE6 is a low on-resistance MOSFET ideal for switching applications.
|
|
5 917Prieinamumas
|
|
|
1,98 €
|
|
|
1,27 €
|
|
|
0,869 €
|
|
|
0,686 €
|
|
|
0,61 €
|
|
|
Peržiūrėti
|
|
|
0,63 €
|
|
|
0,587 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs TSMT8 100V 1.5A N-CH MOSFET
- QS8M51HZGTR
- ROHM Semiconductor
-
1:
1,33 €
-
4 687Prieinamumas
|
„Mouser“ Dalies Nr.
755-QS8M51HZGTR
|
ROHM Semiconductor
|
MOSFETs TSMT8 100V 1.5A N-CH MOSFET
|
|
4 687Prieinamumas
|
|
|
1,33 €
|
|
|
0,842 €
|
|
|
0,559 €
|
|
|
0,438 €
|
|
|
0,397 €
|
|
|
Peržiūrėti
|
|
|
0,399 €
|
|
|
0,335 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
- SH8KE7TB1
- ROHM Semiconductor
-
1:
2,60 €
-
4 591Prieinamumas
|
„Mouser“ Dalies Nr.
755-SH8KE7TB1
|
ROHM Semiconductor
|
MOSFETs 100V 8A Dual Nch+Nch, SOP8, Power MOSFET
|
|
4 591Prieinamumas
|
|
|
2,60 €
|
|
|
1,69 €
|
|
|
1,16 €
|
|
|
0,937 €
|
|
|
0,855 €
|
|
|
Peržiūrėti
|
|
|
0,886 €
|
|
|
0,839 €
|
|
Min.: 1
Daugkart.: 1
:
2 500
|
|
|
|
|
MOSFETs DFN 100V 2A DUAL CH
- UT6ME5TCR
- ROHM Semiconductor
-
1:
0,413 €
-
9 804Prieinamumas
|
„Mouser“ Dalies Nr.
755-UT6ME5TCR
|
ROHM Semiconductor
|
MOSFETs DFN 100V 2A DUAL CH
|
|
9 804Prieinamumas
|
|
|
0,413 €
|
|
|
0,261 €
|
|
|
0,21 €
|
|
|
0,20 €
|
|
|
0,181 €
|
|
|
Peržiūrėti
|
|
|
0,192 €
|
|
|
0,176 €
|
|
|
0,175 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
MOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm
- SSM14N956L,EFF
- Toshiba
-
1:
1,92 €
-
17 833Prieinamumas
|
„Mouser“ Dalies Nr.
757-SSM14N956LEFF
|
Toshiba
|
MOSFETs 12V Common Drain MOSFET Rss(on): 1.1mOhm
|
|
17 833Prieinamumas
|
|
|
1,92 €
|
|
|
1,23 €
|
|
|
0,831 €
|
|
|
0,661 €
|
|
|
Peržiūrėti
|
|
|
0,541 €
|
|
|
0,58 €
|
|
|
0,57 €
|
|
|
0,558 €
|
|
|
0,541 €
|
|
Min.: 1
Daugkart.: 1
:
10 000
|
|
|
|
|
MOSFETs PPAIR3X3 2NCH 30V 15.4A
- SIZ342BDT-T1-GE3
- Vishay / Siliconix
-
1:
1,08 €
-
9 395Prieinamumas
|
„Mouser“ Dalies Nr.
78-SIZ342BDT-T1-GE3
|
Vishay / Siliconix
|
MOSFETs PPAIR3X3 2NCH 30V 15.4A
|
|
9 395Prieinamumas
|
|
|
1,08 €
|
|
|
0,681 €
|
|
|
0,448 €
|
|
|
0,348 €
|
|
|
0,274 €
|
|
|
Peržiūrėti
|
|
|
0,316 €
|
|
|
0,267 €
|
|
|
0,257 €
|
|
|
0,253 €
|
|
Min.: 1
Daugkart.: 1
:
3 000
|
|
|
|
|
SiC SCHOTTKY diodai SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 120 A
- VS-SC120FA120
- Vishay
-
1:
54,20 €
-
65Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-SC120FA120
|
Vishay
|
SiC SCHOTTKY diodai SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 120 A
|
|
65Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 120 A
- VS-SC120FA65
- Vishay
-
1:
45,14 €
-
133Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-SC120FA65
|
Vishay
|
SiC SCHOTTKY diodai SOT-227 Silicon Carbide Schottky Barrier Diode, 650 V, 120 A
|
|
133Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
|
|
SiC SCHOTTKY diodai SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 160 A
- VS-SC160FA120
- Vishay
-
1:
73,12 €
-
132Prieinamumas
|
„Mouser“ Dalies Nr.
78-VS-SC160FA120
|
Vishay
|
SiC SCHOTTKY diodai SOT-227 Silicon Carbide Schottky Barrier Diode, 1200 V, 160 A
|
|
132Prieinamumas
|
|
Min.: 1
Daugkart.: 1
|
|
|
