Infineon Technologies 4G/5G Low Noise Amplifiers
Infineon Technologies 4G/5G Low Noise Amplifiers are designed for LTE and 5G, covering a wide frequency range. The 4G/5G Low Noise Amplifiers gain step features the gain and linearity that can adjust to increase the dynamic system range and accommodate changing interference scenarios.
Infineon Technologies 4G/5G Low Noise Amplifiers support ultra-low bypass current of 2µA and 1.2V operating voltage to reduce power consumption. The devices operate from 1.1V to 2.0V supply voltage over temperature.
The Amps are housed in a compact nine-pin TSNP-9 package with the dimensions of 1.1mm x 1.1mm, saving space on the PCB.
Features
- High linearity
- Best-in-class noise figure
- Low current consumption
- 1.5V to 3.3V Supply voltage
- Ultra-small
- Single LNAs: TSNP-6-2 leadless package (footprint: 1.1mm x 0.7mm2)
- Quad LNA banks: TSLP-12-4 leadless package (footprint: 1.1 x 1.9mm2)
- B7HF Silicon Germanium Carbon (SiGe: C) technology
- RF output internally matched to 50Ω
- Low external component count
- 2kV HBM ESD protection
- Pb-free (RoHS compliant) package
Applications
- Smartphones
- Tablets
- Datacards
- M2M communication
Block Diagram
MIPI to RF time
View Results ( 5 ) Page
| Dalies Numeris | Duomenų Lapas | Darbinis Dažnis | P1dB - suspaudimo taškas |
|---|---|---|---|
| BGA9H1MN9E6329XTSA1 |  |
1.4 GHz to 2.7 GHz | - 17 dBm |
| BGM787U50E6327XUMA1 | |
600 MHz to 2.7 GHz | |
| BGA9H1BN6E6327XTSA1 | |
2.3 GHz to 2.7 GHz | - 17 dBm |
| BGA9C1MN9E6327XTSA1 | |
4.4 GHz to 5 GHz | - 19 dBm |
| BGA9V1MN9E6327XTSA1 | |
3.3 GHz to 4.2 GHz | - 18 dBm |
Paskelbta: 2021-04-13
| Atnaujinta: 2025-07-29